Inventor · disambiguated record
Antonino Schillaci
Also filed as: SCHILLACI ANTONINO
15 granted patents·1 pending application·356 citations·filing 1996–2024
92Inventor score
Files withST MICROELECTRONICS SRL10CONS RIC MICROELETTRONICA2SGS THOMSON MICROELECTRONICS2ANTONINO SCHILLACI1PATTI ALFONSO1
Top patents by PatentIndex Score
16 records- 0195US6365930B1Edge termination of semiconductor devices for high voltages with resistive voltage dividerST MICROELECTRONICS SRL·Filed 2000·Granted Apr 2, 2002·149 cites·7 claims
- 0293US5798554AMOS-technology power device integrated structure and manufacturing process thereofCONS RIC MICROELETTRONICA·Filed 1996·Granted Aug 25, 1998·142 cites·61 claims
- 0378US9899508B1Super junction semiconductor device for RF applications, linear region operation and related manufacturing processST MICROELECTRONICS SRL·Filed 2016·Granted Feb 20, 2018·4 cites·22 claims
- 0475US2024379742A1Charge balance semiconductor device, in particular for high efficiency rf applications, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0572US7186592B2High performance, integrated, MOS-type semiconductor device and related manufacturing processST MICROELECTRONICS SRL·Filed 2005·Granted Mar 6, 2007·5 cites·5 claims
- 0667US12057474B2Charge balance semiconductor device, in particular for high efficiency RF applications, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
- 0764US6051862AMOS-technology power device integrated structureSGS THOMSON MICROELECTRONICS·Filed 1998·Granted Apr 18, 2000·21 cites·101 claims
- 0859US11024707B2Charge balance semiconductor device, in particular for high efficiency RF applications, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2019·Granted Jun 1, 2021·0 cites·22 claims
- 0957US6111297AMOS-technology power device integrated structure and manufacturing process thereofCONS RIC MICROELETTRONICA·Filed 1998·Granted Aug 29, 2000·16 cites·49 claims
- 1053US5841167AMOS-technology power device integrated structureSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Nov 24, 1998·13 cites·47 claims
- 1151US8366941B2Process for exothermal treatment and recovery of solid, semi-solid, pasty and/or damp wasteANTONINO SCHILLACI·Filed 2008·Granted Feb 5, 2013·0 cites·33 claims
- 1246US6919252B2Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layerST MICROELECTRONICS SRL·Filed 2004·Granted Jul 19, 2005·3 cites·8 claims
- 1346US6750512B2MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer located between a semiconductor region and a conductive layerST MICROELECTRONICS SRL·Filed 2002·Granted Jun 15, 2004·3 cites·20 claims
- 1436US6933563B2High performance, integrated, MOS-type semiconductor device and related manufacturing processST MICROELECTRONICS SRL·Filed 2003·Granted Aug 23, 2005·0 cites·20 claims
- 1533US9508846B2Vertical MOS semiconductor device for high-frequency applications, and related manufacturing processST MICROELECTRONICS SRL·Filed 2015·Granted Nov 29, 2016·0 cites·21 claims
- 1625US8759188B2Radiation hardened bipolar injunction transistorPATTI ALFONSO·Filed 2011·Granted Jun 24, 2014·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →