Inventor · disambiguated record
Farrokh Omid-Zohoor
Also filed as: OMID-ZOHOOR FARROKH · OMID-ZOHOOR FARROKH KIA
17 granted patents·1 pending application·316 citations·filing 1992–2019
95Inventor score
Top patents by PatentIndex Score
18 records- 0186US10217521B2Multi-time programmable non-volatile memory cellLATTICE SEMICONDUCTOR CORP·Filed 2017·Granted Feb 26, 2019·4 cites·22 claims
- 0281US5777370ATrench isolation of field effect transistorsADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 7, 1998·55 cites·10 claims
- 0377US11295825B2Multi-time programmable non-volatile memory cellLATTICE SEMICONDUCTOR CORP·Filed 2019·Granted Apr 5, 2022·2 cites·19 claims
- 0473US7024646B2Electrostatic discharge simulationLATTICE SEMICONDUCTOR CORP·Filed 2004·Granted Apr 4, 2006·18 cites·22 claims
- 0571US5780353AMethod of doping trench sidewalls before trench etchingADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 14, 1998·43 cites·17 claims
- 0663US6064104ATrench isolation structures with oxidized silicon regions and method for making the sameADVANCED MICRO DEVICES INC·Filed 1996·Granted May 16, 2000·24 cites·19 claims
- 0762US5973372ASilicided shallow junction transistor formation and structure with high and low breakdown voltagesFiled 1997·Granted Oct 26, 1999·22 cites·13 claims
- 0861US6184108B1Method of making trench isolation structures with oxidized silicon regionsADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 6, 2001·22 cites·8 claims
- 0960US5861104ATrench isolation with rounded top and bottom corners and edgesADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 19, 1999·26 cites·8 claims
- 1059US6274419B1Trench isolation of field effect transistorsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 14, 2001·21 cites·20 claims
- 1157US6011272ASilicided shallow junction formation and structure with high and low breakdown voltagesADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 4, 2000·17 cites·7 claims
- 1256US5877066ANarrow width trenches for field isolation in integrated circuitsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 2, 1999·18 cites·6 claims
- 1353US5742090ANarrow width trenches for field isolation in integrated circuitsADVANCED MICRO DEVICES INC·Filed 1996·Granted Apr 21, 1998·16 cites·15 claims
- 1450US7307319B1High-voltage protection device and processLATTICE SEMICONDUCTOR CORP·Filed 2004·Granted Dec 11, 2007·4 cites·3 claims
- 1547US6097072ATrench isolation with suppressed parasitic edge transistorsADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·14 cites·10 claims
- 1638US5215937AOptimizing doping control in short channel MOSADVANCED MICRO DEVICES INC·Filed 1992·Granted Jun 1, 1993·10 cites·14 claims
- 1737US6703305B1Semiconductor device having metallized interconnect structure and method of fabricationLATTICE SEMICONDUCTOR CORP·Filed 2002·Granted Mar 9, 2004·0 cites·11 claims
- 1835US2006157748A1Metal junction diode and processCHONG NUI·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →