Inventor · disambiguated record
Ganming Qin
Also filed as: QIN GANMING
29 granted patents·118 citations·filing 2000–2022
95Inventor score
Top patents by PatentIndex Score
29 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0294US9324800B1Bidirectional MOSFET with suppressed bipolar snapback and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Apr 26, 2016·13 cites·20 claims
- 0393US10811502B1Method of manufacture of super-junction power semiconductor deviceNXP USA INC·Filed 2019·Granted Oct 20, 2020·14 cites·19 claims
- 0488US9397213B2Trench gate FET with self-aligned source contactFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jul 19, 2016·9 cites·16 claims
- 0587US9680003B2Trench MOSFET shield poly contactFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·14 claims
- 0686US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 0786US9515178B1Shielded trench semiconductor devices and related fabrication methodsFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 0885US9553184B2Edge termination for trench gate FETFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 24, 2017·8 cites·19 claims
- 0984US7378317B2Superjunction power MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 27, 2008·10 cites·5 claims
- 1082US11329150B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 1181US9178027B1Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 1278US10153357B1Superjunction power semiconductor device and method for formingNXP USA INC·Filed 2017·Granted Dec 11, 2018·3 cites·19 claims
- 1378US9362394B2Power device termination structures and methodsZITOUNI MOANISS·Filed 2014·Granted Jun 7, 2016·4 cites·20 claims
- 1476US9293535B2Power MOSFET current sense structure and methodWANG PEILIN·Filed 2012·Granted Mar 22, 2016·5 cites·13 claims
- 1575US8143126B2Method for forming a vertical MOS transistorCHEN JINGJING·Filed 2010·Granted Mar 27, 2012·6 cites·18 claims
- 1671US10074743B2Trench MOSFET shield poly contactNXP USA INC·Filed 2017·Granted Sep 11, 2018·1 cites·5 claims
- 1767US11631763B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 1866US10644146B1Vertical bi-directional switches and method for making sameNXP USA INC·Filed 2018·Granted May 5, 2020·1 cites·20 claims
- 1963US11489072B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2021·Granted Nov 1, 2022·0 cites·5 claims
- 2062US7602014B2Superjunction power MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 13, 2009·2 cites·5 claims
- 2161US12170254B2Transistor with integrated short circuit protectionNXP USA INC·Filed 2022·Granted Dec 17, 2024·0 cites·17 claims
- 2259US6424083B1Field emission device having an improved ballast resistorMOTOROLA INC·Filed 2000·Granted Jul 23, 2002·4 cites·23 claims
- 2356US11004970B2Mirror device structure for power MOSFET and method of manufactureNXP USA INC·Filed 2019·Granted May 11, 2021·0 cites·15 claims
- 2456US10672902B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 2556US8030153B2High voltage TMOS semiconductor device with low gate charge structure and method of makingFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 4, 2011·1 cites·14 claims
- 2651US12349436B2Termination ballast to suppress hotspot formation in trench field plate power MOSFETsNXP USA INC·Filed 2022·Granted Jul 1, 2025·0 cites·19 claims
- 2751US10297684B2Bidirectional power MOSFET structure with a cathode short structureNXP USA INC·Filed 2017·Granted May 21, 2019·0 cites·11 claims
- 2849US9419128B2Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 2932US8895394B2Trench FET with source recess etchQIN GANMING·Filed 2012·Granted Nov 25, 2014·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →