Inventor · disambiguated record
Shaw-Ning Mei
Also filed as: MEI SHAW-NING
13 granted patents·1 pending application·372 citations·filing 1991–2001
93Inventor score
Files withIBM13
Top patents by PatentIndex Score
14 records- 0193US6130453AFlash memory structure with floating gate in vertical trenchIBM·Filed 1999·Granted Oct 10, 2000·150 cites·12 claims
- 0275US5394294ASelf protective decoupling capacitor structureIBM·Filed 1992·Granted Feb 28, 1995·38 cites·7 claims
- 0370US5484738AMethod of forming silicon on oxide semiconductor device structure for BiCMOS integrated circuitsIBM·Filed 1995·Granted Jan 16, 1996·34 cites·4 claims
- 0466US6541349B2Shallow trench isolation using non-conformal dielectric and planarizatrionIBM·Filed 2001·Granted Apr 1, 2003·18 cites·10 claims
- 0565US5446312AVertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Aug 29, 1995·19 cites·4 claims
- 0660US5331199ABipolar transistor with reduced topographyIBM·Filed 1993·Granted Jul 19, 1994·28 cites·5 claims
- 0759US6531265B2Method to planarize semiconductor surfaceIBM·Filed 2000·Granted Mar 11, 2003·9 cites·12 claims
- 0859US5521399AAdvanced silicon on oxide semiconductor device structure for BiCMOS integrated circuitIBM·Filed 1994·Granted May 28, 1996·24 cites·16 claims
- 0953US5371022AMethod of forming a novel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1994·Granted Dec 6, 1994·11 cites·6 claims
- 1050US6270353B1Low cost shallow trench isolation using non-conformal dielectric materialIBM·Filed 1999·Granted Aug 7, 2001·16 cites·20 claims
- 1143US5229322AMethod of making low resistance substrate or buried layer contactIBM·Filed 1991·Granted Jul 20, 1993·13 cites·12 claims
- 1239US5279987AFabricating planar complementary patterned subcollectors with silicon epitaxial layerIBM·Filed 1991·Granted Jan 18, 1994·10 cites·8 claims
- 1334US2001036709A1Low cost shallow trench isolation using non-conformal dielectric materialFiled 2001·Application pending·0 cites
- 1432US5341023ANovel vertical-gate CMOS compatible lateral bipolar transistorIBM·Filed 1992·Granted Aug 23, 1994·2 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →