Inventor · disambiguated record
Jessica S. Kachian
Also filed as: KACHIAN JESSICA · KACHIAN JESSICA S · KACHIAN JESSICA SEVANNE
29 granted patents·8 pending applications·591 citations·filing 2011–2023
96Inventor score
Top patents by PatentIndex Score
37 records- 0199US8987794B2Non-planar gate all-around device and method of fabrication thereofRACHMADY WILLY·Filed 2011·Granted Mar 24, 2015·65 cites·29 claims
- 0298US9711366B2Selective etch for metal-containing materialsAPPLIED MATERIALS INC·Filed 2016·Granted Jul 18, 2017·115 cites·13 claims
- 0398US9472417B2Plasma-free metal etchAPPLIED MATERIALS INC·Filed 2014·Granted Oct 18, 2016·138 cites·9 claims
- 0498US9299582B2Selective etch for metal-containing materialsAPPLIED MATERIALS INC·Filed 2014·Granted Mar 29, 2016·154 cites·8 claims
- 0597US9252275B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2014·Granted Feb 2, 2016·20 cites·19 claims
- 0697US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 0795US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 0894US10418487B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2015·Granted Sep 17, 2019·9 cites·16 claims
- 0994US9768013B2Apparatus and method for selective depositionAPPLIED MATERIALS INC·Filed 2016·Granted Sep 19, 2017·10 cites·7 claims
- 1092US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 1192US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 1291US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 1383US9640671B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2016·Granted May 2, 2017·2 cites·14 claims
- 1481US10199215B2Apparatus and method for selective depositionAPPLIED MATERIALS INC·Filed 2017·Granted Feb 5, 2019·2 cites·13 claims
- 1579US9159787B2Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2014·Granted Oct 13, 2015·2 cites·13 claims
- 1675US11894465B2Deep gate-all-around semiconductor device having germanium or group III-V active layerGOOGLE LLC·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 1775US9691848B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2016·Granted Jun 27, 2017·1 cites·20 claims
- 1870USRE50222ENon-planar gate all-around device and method of fabrication thereofSONY GROUP CORP·Filed 2021·Granted Nov 26, 2024·0 cites·16 claims
- 1970US10366878B2Selective deposition through formation of self-assembled monolayersAPPLIED MATERIALS INC·Filed 2017·Granted Jul 30, 2019·1 cites·16 claims
- 2066US9824889B2CVD silicon monolayer formation method and gate oxide ALD formation on III-V materialsAPPLIED MATERIALS INC·Filed 2015·Granted Nov 21, 2017·1 cites·13 claims
- 2163US2024121964A1Ald vs pvd igzo channel and alox channel passivation in a 3d nand vertical wordline driverIntel NDTM US LLC·Filed 2023·Application pending·0 cites
- 2262US10950733B2Deep gate-all-around semiconductor device having germanium or group III-V active layerGOOGLE LLC·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 2362US2023402389A1Integrated word line contact structures in three-dimensional (3d) memory arrayINTEL CORP·Filed 2023·Application pending·0 cites
- 2461US10008565B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2017·Granted Jun 26, 2018·0 cites·10 claims
- 2558US9490329B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2015·Granted Nov 8, 2016·0 cites·8 claims
- 2658US2019148131A1Apparatus and method for selective depositionAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 2758US2023422506A1Large grain and halogen-free silicon cell channel for 3d nand stringINTEL CORP·Filed 2023·Application pending·0 cites
- 2857US10553425B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2017·Granted Feb 4, 2020·0 cites·20 claims
- 2954US10373824B2CVD silicon monolayer formation method and gate oxide ALD formation on semiconductor materialsAPPLIED MATERIALS INC·Filed 2017·Granted Aug 6, 2019·0 cites·20 claims
- 3054US9773663B2Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALDAPPLIED MATERIALS INC·Filed 2016·Granted Sep 26, 2017·0 cites·20 claims
- 3147US2021143100A1Integrated word line contact structures in three-dimensional (3d) memory arrayINTEL CORP·Filed 2019·Application pending·0 cites
- 3246US10262858B2Surface functionalization and passivation with a control layerAPPLIED MATERIALS INC·Filed 2017·Granted Apr 16, 2019·0 cites·20 claims
- 3346US2014091279A1Non-planar semiconductor device having germanium-based active region with release etch-passivation surfaceKACHIAN JESSICA S·Filed 2012·Application pending·0 cites
- 3444US9685325B2Carbon and/or nitrogen incorporation in silicon based films using silicon precursors with organic co-reactants by PE-ALDAPPLIED MATERIALS INC·Filed 2015·Granted Jun 20, 2017·0 cites·19 claims
- 3542US2019326114A1Methods of treating a substrate to form a layer thereon for application in selective deposition processesAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3637US9896326B2FCVD line bending resolution by deposition modulationAPPLIED MATERIALS INC·Filed 2015·Granted Feb 20, 2018·0 cites·13 claims
- 3736US2017040158A1Low temperature ald on semiconductor and metallic surfacesAPPLIED MATERIALS INC·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →