Inventor · disambiguated record
Bum-Seok Seo
Also filed as: SEO BUM-SEOK
14 granted patents·8 pending applications·67 citations·filing 2004–2016
90Inventor score
Top patents by PatentIndex Score
22 records- 0194US7518007B2Ge precursor, GST thin layer formed using the same, phase-change memory device including the GST thin layer, and method of manufacturing the GST thin layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 14, 2009·18 cites·9 claims
- 0289US7153786B2Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 26, 2006·14 cites·29 claims
- 0382US9118002B2Methods of forming patterns and methods of manufacturing semiconductor devices using the sameSEO BUM-SEOK·Filed 2014·Granted Aug 25, 2015·5 cites·17 claims
- 0476US7663136B2Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·2 cites·6 claims
- 0576US7352022B2Capacitor having a dielectric layer that reduces leakage current and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·6 cites·30 claims
- 0671US7834206B2Organic-metal precursor material and method of manufacturing metal thin film using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·1 cites·4 claims
- 0771US7507958B2Conductive carbon nanotube tip, probe having the conductive carbon nanotube tip, and method of manufacturing the conductive carbon nanotube tipSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 24, 2009·7 cites·13 claims
- 0867US7691441B2Method of forming carbon fibers using metal-organic chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 6, 2010·1 cites·16 claims
- 0965US7518213B2Nonvolatile variable resistance memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·5 cites·18 claims
- 1064US9356071B2Methods of forming patterns and methods of manufacturing semiconductor devices using the sameSEO BUM-SEOK·Filed 2015·Granted May 31, 2016·1 cites·2 claims
- 1159US7084482B2Capacitor of a semiconductor device and memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·6 cites·22 claims
- 1256US7601392B2Organic-metal precursor material and method of manufacturing metal thin film using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 13, 2009·0 cites·12 claims
- 1355US2008182037A1Method of forming metal layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1454US2009126173A1Method of manufacturing a capacitor and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1552US2007196984A1Nonvolatile memory device, layer deposition apparatus and method of fabricating a nonvolatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1651US2008210998A1Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereofKOO JUNE-MO·Filed 2008·Application pending·0 cites
- 1750US2007059447A1Method of fabricating lanthanum oxide layer and method of fabricating MOSFET and capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1850US2007012974A1Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1949US2007297091A1Patterned magnetic recording medium and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2047US8319291B2Non-volatile memory device with data storage layerKIM DEOK-KEE·Filed 2009·Granted Nov 27, 2012·1 cites·12 claims
- 2143US2005082593A1Capacitor, method of manufacturing the same and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2234US9934986B2Method of forming fine patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 3, 2018·0 cites·14 claims
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