Inventor · disambiguated record
Bart J. Van Schravendijk
Also filed as: VAN SCHRAVENDIJK BART · VAN SCHRAVENDIJK BART J · VAN SCHRAVENDIJK BART JAN
126 granted patents·37 pending applications·9,141 citations·filing 1994–2025
99Inventor score
Files withLAM RES CORP90NOVELLUS SYSTEMS INC41VAN SCHRAVENDIJK BART4ANTONELLI GEORGE ANDREW3CHATTOPADHYAY KAUSHIK3
Top patents by PatentIndex Score
163 records- 0198US12051589B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Jul 30, 2024·6 cites·17 claims
- 0298US11784047B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Oct 10, 2023·10 cites·17 claims
- 0398US11637037B2Method to create air gapsLAM RES CORP·Filed 2020·Granted Apr 25, 2023·12 cites·16 claims
- 0498US11183383B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2020·Granted Nov 23, 2021·16 cites·18 claims
- 0598US10002787B2Staircase encapsulation in 3D NAND fabricationLAM RES CORP·Filed 2017·Granted Jun 19, 2018·28 cites·18 claims
- 0698US9966299B2Inhibitor plasma mediated atomic layer deposition for seamless feature fillLAM RES CORP·Filed 2016·Granted May 8, 2018·365 cites·19 claims
- 0798US9875891B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Jan 23, 2018·478 cites·15 claims
- 0898US9824893B1Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2016·Granted Nov 21, 2017·442 cites·19 claims
- 0998US9793110B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2016·Granted Oct 17, 2017·25 cites·16 claims
- 1098US9564312B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2014·Granted Feb 7, 2017·415 cites·14 claims
- 1198US9425078B2Inhibitor plasma mediated atomic layer deposition for seamless feature fillLAM RES CORP·Filed 2015·Granted Aug 23, 2016·454 cites·22 claims
- 1298US9257274B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2013·Granted Feb 9, 2016·523 cites·23 claims
- 1398US8956983B2Conformal doping via plasma activated atomic layer deposition and conformal film depositionSWAMINATHAN SHANKAR·Filed 2012·Granted Feb 17, 2015·588 cites·41 claims
- 1498US8557712B1PECVD flowable dielectric gap fillANTONELLI GEORGE ANDREW·Filed 2008·Granted Oct 15, 2013·556 cites·21 claims
- 1598US7851232B2UV treatment for carbon-containing low-k dielectric repair in semiconductor processingNOVELLUS SYSTEMS INC·Filed 2006·Granted Dec 14, 2010·571 cites·22 claims
- 1698US7727880B1Protective self-aligned buffer layers for damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2007·Granted Jun 1, 2010·332 cites·19 claims
- 1798US7648899B1Interfacial layers for electromigration resistance improvement in damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2008·Granted Jan 19, 2010·78 cites·27 claims
- 1898US6596654B1Gap fill for high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 2001·Granted Jul 22, 2003·425 cites·26 claims
- 1998US6395150B1Very high aspect ratio gapfill using HDPNOVELLUS SYSTEMS INC·Filed 1998·Granted May 28, 2002·444 cites·12 claims
- 2097US12112980B2Method to create air gapsLAM RES CORP·Filed 2021·Granted Oct 8, 2024·4 cites·12 claims
- 2197US11088019B2Method to create air gapsLAM RES CORP·Filed 2018·Granted Aug 10, 2021·17 cites·18 claims
- 2297US11031245B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2017·Granted Jun 8, 2021·21 cites·18 claims
- 2397US10679848B2Selective atomic layer deposition with post-dose treatmentLAM RES CORP·Filed 2018·Granted Jun 9, 2020·10 cites·13 claims
- 2497US10580690B2Staircase encapsulation in 3D NAND fabricationLAM RES CORP·Filed 2018·Granted Mar 3, 2020·15 cites·14 claims
- 2597US10361076B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2017·Granted Jul 23, 2019·17 cites·4 claims
- 2697US9355886B2Conformal film deposition for gapfillNOVELLUS SYSTEMS INC·Filed 2013·Granted May 31, 2016·53 cites·14 claims
- 2797US8846525B2Hardmask materialsNOVELLUS SYSTEMS INC·Filed 2013·Granted Sep 30, 2014·21 cites·7 claims
- 2897US8728956B2Plasma activated conformal film depositionLAVOIE ADRIEN·Filed 2011·Granted May 20, 2014·541 cites·39 claims
- 2997US8637411B2Plasma activated conformal dielectric film depositionSWAMINATHAN SHANKAR·Filed 2011·Granted Jan 28, 2014·99 cites·44 claims
- 3097US7858510B1Interfacial layers for electromigration resistance improvement in damascene interconnectsNOVELLUS SYSTEMS INC·Filed 2010·Granted Dec 28, 2010·50 cites·22 claims
- 3197US7622162B1UV treatment of STI films for increasing tensile stressNOVELLUS SYSTEMS INC·Filed 2007·Granted Nov 24, 2009·63 cites·21 claims
- 3296US11920239B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2022·Granted Mar 5, 2024·3 cites·15 claims
- 3396US10804099B2Selective inhibition in atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2017·Granted Oct 13, 2020·13 cites·16 claims
- 3496US10566186B2Methods of encapsulationLAM RES CORP·Filed 2018·Granted Feb 18, 2020·9 cites·17 claims
- 3596US10316409B2Radical source design for remote plasma atomic layer depositionNOVELLUS SYSTEMS INC·Filed 2013·Granted Jun 11, 2019·14 cites·24 claims
- 3696US10062563B2Selective atomic layer deposition with post-dose treatmentLAM RES CORP·Filed 2016·Granted Aug 28, 2018·16 cites·18 claims
- 3796US9828672B2Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasmaLAM RES CORP·Filed 2015·Granted Nov 28, 2017·25 cites·19 claims
- 3896US9773643B1Apparatus and method for deposition and etch in gap fillLAM RES CORP·Filed 2016·Granted Sep 26, 2017·41 cites·19 claims
- 3996US9230800B2Plasma activated conformal film depositionNOVELLUS SYSTEMS INC·Filed 2014·Granted Jan 5, 2016·41 cites·22 claims
- 4096US9190489B1Sacrificial pre-metal dielectric for self-aligned contact schemeLAM RES CORP·Filed 2014·Granted Nov 17, 2015·31 cites·24 claims
- 4196US7981763B1Atomic layer removal for high aspect ratio gapfillNOVELLUS SYSTEMS INC·Filed 2008·Granted Jul 19, 2011·59 cites·18 claims
- 4295US10373806B2Apparatus and method for deposition and etch in gap fillLAM RES CORP·Filed 2017·Granted Aug 6, 2019·17 cites·18 claims
- 4395US9741584B1Densification of dielectric film using inductively coupled high density plasmaLAM RES CORP·Filed 2016·Granted Aug 22, 2017·14 cites·17 claims
- 4495US9515156B2Air gap spacer integration for improved fin device performanceLAM RES CORP·Filed 2015·Granted Dec 6, 2016·42 cites·19 claims
- 4595US8133797B2Protective layer to enable damage free gap fillVAN SCHRAVENDIJK BART·Filed 2008·Granted Mar 13, 2012·78 cites·23 claims
- 4695US8058179B1Atomic layer removal process with higher etch amountDRAEGER NERISSA·Filed 2008·Granted Nov 15, 2011·286 cites·17 claims
- 4795US7682966B1Multistep method of depositing metal seed layersNOVELLUS SYSTEMS INC·Filed 2007·Granted Mar 23, 2010·43 cites·22 claims
- 4895US7541200B1Treatment of low k films with a silylating agent for damage repairNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 2, 2009·32 cites·19 claims
- 4995US7396759B1Protection of Cu damascene interconnects by formation of a self-aligned buffer layerNOVELLUS SYSTEMS INC·Filed 2004·Granted Jul 8, 2008·105 cites·15 claims
- 5094US11133180B2Gapfill of variable aspect ratio features with a composite PEALD and PECVD methodLAM RES CORP·Filed 2019·Granted Sep 28, 2021·6 cites·14 claims
Showing the top 50 of 163 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →