Inventor · disambiguated record
Yuji Zhao
Also filed as: ZHAO YUJI
9 granted patents·7 pending applications·12 citations·filing 2011–2022
81Inventor score
Top patents by PatentIndex Score
16 records- 0184US10964749B2GaN-based threshold switching device and memory diodeFU KAI·Filed 2019·Granted Mar 30, 2021·4 cites·10 claims
- 0282US8686397B2Low droop light emitting diode structure on gallium nitride semipolar substratesNAKAMURA SHUJI·Filed 2012·Granted Apr 1, 2014·4 cites·26 claims
- 0380US11495694B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2021·Granted Nov 8, 2022·1 cites·10 claims
- 0476US10700218B2High-voltage aluminum nitride (AIN) schottky-barrier diodesUNIV ARIZONA STATE·Filed 2018·Granted Jun 30, 2020·2 cites·13 claims
- 0575US11527573B2GaN-based threshold switching device and memory diodeFU KAI·Filed 2021·Granted Dec 13, 2022·1 cites·10 claims
- 0669US12159943B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0752US11626483B2Low-leakage regrown GaN p-n junctions for GaN power devicesZHAO YUJI·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 0852US11417529B2Plasma-based edge terminations for gallium nitride power devicesZHAO YUJI·Filed 2020·Granted Aug 16, 2022·0 cites·10 claims
- 0952US2014151634A1Low droop light emitting diode structure on gallium nitride semipolar substratesUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 1044US2020295214A1Pn junctions with mechanically exfoliated gallium oxide and gallium nitrideMONTES JOSSUE·Filed 2020·Application pending·0 cites
- 1143US2012273796A1High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrateZHAO YUJI·Filed 2012·Application pending·0 cites
- 1242US11189717B2Steep slope transistors with threshold switching devicesHUANG XUANQI·Filed 2020·Granted Nov 30, 2021·0 cites·17 claims
- 1342US2014167059A1Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applicationsUNIV CALIFORNIA·Filed 2013·Application pending·0 cites
- 1440US2012313077A1High emission power and low efficiency droop semipolar blue light emitting diodesNAKAMURA SHUJI·Filed 2012·Application pending·0 cites
- 1537US2012126283A1High power, high efficiency and low efficiency droop iii-nitride light-emitting diodes on semipolar substratesZHAO YUJI·Filed 2011·Application pending·0 cites
- 1633US2020287069A1Nonpolar iii-nitrides solar cell deviceHUANG XUANQI·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →