Inventor · disambiguated record
Liesbeth Witters
Also filed as: WITTERS LIESBETH
21 granted patents·6 pending applications·66 citations·filing 2006–2024
92Inventor score
Top patents by PatentIndex Score
27 records- 0192US10269929B2Internal spacer formation for nanowire semiconductor devicesIMEC VZW·Filed 2017·Granted Apr 23, 2019·10 cites·14 claims
- 0292US9842777B2Semiconductor devices comprising multiple channels and method of making sameIMEC VZW·Filed 2016·Granted Dec 12, 2017·12 cites·19 claims
- 0389US9123566B2Complementary metal-oxide-semiconductor device comprising silicon and germanium and method for manufacturing thereofIMEC·Filed 2013·Granted Sep 1, 2015·16 cites·5 claims
- 0487US9476143B2Methods using mask structures for substantially defect-free epitaxial growthIMEC·Filed 2013·Granted Oct 25, 2016·7 cites·16 claims
- 0584US9633891B2Method for forming a transistor structure comprising a fin-shaped channel structureIMEC VZW·Filed 2015·Granted Apr 25, 2017·4 cites·12 claims
- 0683US9070712B2Methods for manufacturing a field-effect semiconductor deviceIMEC·Filed 2013·Granted Jun 30, 2015·7 cites·20 claims
- 0780US10361268B2Internal spacers for nanowire semiconductor devicesIMEC VZW·Filed 2018·Granted Jul 23, 2019·3 cites·17 claims
- 0874US9478544B2Method for forming a germanium channel layer for an NMOS transistor device, NMOS transistor device and CMOS deviceIMEC VZW·Filed 2015·Granted Oct 25, 2016·2 cites·19 claims
- 0970US11195767B2Integration of a III-V device on a Si substrateIMEC VZW·Filed 2019·Granted Dec 7, 2021·1 cites·12 claims
- 1070US10090393B2Method for forming a field effect transistor device having an electrical contactIMEC VZW·Filed 2016·Granted Oct 2, 2018·2 cites·19 claims
- 1163US9502415B2Method for providing an NMOS device and a PMOS device on a silicon substrate and silicon substrate comprising an NMOS device and a PMOS deviceIMEC VZW·Filed 2015·Granted Nov 22, 2016·1 cites·17 claims
- 1263US2025118564A1Method for Thinning a Semiconductor SubstrateIMEC VZW·Filed 2024·Application pending·0 cites
- 1360US8828826B2Method for manufacturing a transistor device comprising a germanium based channel layerIMEC·Filed 2013·Granted Sep 9, 2014·1 cites·14 claims
- 1451US10340139B2Methods and mask structures for substantially defect-free epitaxial growthIMEC·Filed 2016·Granted Jul 2, 2019·0 cites·15 claims
- 1550US9299563B2Method for forming a strained semiconductor structureIMEC VZW·Filed 2014·Granted Mar 29, 2016·0 cites·18 claims
- 1650US2025125291A1Semiconductor product and method for manufacturing a semiconductor productMICLEDI MICRODISPLAYS BV·Filed 2023·Application pending·0 cites
- 1749US11387350B2Semiconductor fin structure and method of fabricating the sameIMEC VZW·Filed 2019·Granted Jul 12, 2022·0 cites·15 claims
- 1849US10714595B2Method of forming a semiconductor device comprising at least one germanium nanowireIMEC VZW·Filed 2018·Granted Jul 14, 2020·0 cites·13 claims
- 1948US11646200B2Integration of a III-V construction on a group IV substrateIMEC VZW·Filed 2021·Granted May 9, 2023·0 cites·18 claims
- 2048US11557503B2Method for co-integration of III-V devices with group IV devicesIMEC VZW·Filed 2020·Granted Jan 17, 2023·0 cites·17 claims
- 2146US2007172770A1Methods for manufacturing dense integrated circuitsWITTERS LIESBETH·Filed 2006·Application pending·0 cites
- 2245US11355618B2Low parasitic Ccb heterojunction bipolar transistorIMEC VZW·Filed 2020·Granted Jun 7, 2022·0 cites·20 claims
- 2344US2015076620A1Method for manufacturing transistors and associated substrateIMEC VZW·Filed 2014·Application pending·0 cites
- 2444US2011084313A1Methods for Manufacturing Dense Integrated CircuitsIMEC·Filed 2010·Application pending·0 cites
- 2538US2013181301A1Method for manufacturing a field-effect semiconductor device following a replacement gate processIMEC·Filed 2012·Application pending·0 cites
- 2637US9972622B2Method for manufacturing a CMOS device and associated deviceIMEC VZW·Filed 2016·Granted May 15, 2018·0 cites·19 claims
- 2733US9343329B2Contact formation in Ge-containing semiconductor devicesIMEC VZW·Filed 2015·Granted May 17, 2016·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →