Inventor · disambiguated record
Hirokazu Kawashima
Also filed as: KAWASHIMA HIROKAZU
30 granted patents·6 pending applications·710 citations·filing 2008–2020
97Inventor score
Files withIDEMITSU KOSAN CO13YANO KOKI8MITSUBISHI HEAVY IND COMPRESSOR CORP6INOUE KAZUYOSHI3SHARP KK3
Top patents by PatentIndex Score
36 records- 0199US8981369B2Field effect transistor using oxide semiconductor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted Mar 17, 2015·86 cites·7 claims
- 0299US8384077B2Field effect transistor using oxide semicondutor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2008·Granted Feb 26, 2013·247 cites·12 claims
- 0398US8791457B2Oxide semiconductor field effect transistor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted Jul 29, 2014·52 cites·16 claims
- 0498US8723175B2Oxide semiconductor field effect transistor and method for manufacturing the sameIDEMITSU KOSAN CO·Filed 2013·Granted May 13, 2014·60 cites·14 claims
- 0598US8461583B2Oxide semiconductor field effect transistor and method for manufacturing the sameYANO KOKI·Filed 2008·Granted Jun 11, 2013·81 cites·17 claims
- 0696US8455371B2Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistorYANO KOKI·Filed 2009·Granted Jun 4, 2013·33 cites·18 claims
- 0795US9136338B2Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistorIDEMITSU KOSAN CO·Filed 2013·Granted Sep 15, 2015·15 cites·14 claims
- 0894US8795554B2Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering targetYANO KOKI·Filed 2009·Granted Aug 5, 2014·24 cites·17 claims
- 0994US8445903B2Thin film transistor having a crystalline semiconductor film including indium oxide which contains a hydrogen element and method for manufacturing sameINOUE KAZUYOSHI·Filed 2009·Granted May 21, 2013·30 cites·8 claims
- 1093US8753548B2Composite oxide sintered body and sputtering target comprising sameYANO KOKI·Filed 2009·Granted Jun 17, 2014·18 cites·7 claims
- 1192US10227898B2Multi-valve steam valve and steam turbineMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2013·Granted Mar 12, 2019·11 cites·10 claims
- 1291US8871119B2Composite oxide sintered body and sputtering target comprising sameIDEMITSU KOSAN CO·Filed 2012·Granted Oct 28, 2014·9 cites·14 claims
- 1389US8623511B2Sputtering target for oxide thin film and process for producing the sputtering targetKAWASHIMA HIROKAZU·Filed 2009·Granted Jan 7, 2014·17 cites·25 claims
- 1486US10833201B2Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atomsIDEMITSU KOSAN CO·Filed 2016·Granted Nov 10, 2020·3 cites·5 claims
- 1586US8641932B2Sintered complex oxide and sputtering target comprising sameYANO KOKI·Filed 2009·Granted Feb 4, 2014·8 cites·16 claims
- 1679US10649257B2Cover mounting structure and display deviceSHARP KK·Filed 2018·Granted May 12, 2020·1 cites·4 claims
- 1779US10644163B2Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atomsYANO KOKI·Filed 2009·Granted May 5, 2020·4 cites·5 claims
- 1879US8647537B2Oxide sintered body and sputtering targetUTSUNO FUTOSHI·Filed 2009·Granted Feb 11, 2014·7 cites·11 claims
- 1969US8784699B2In-Ga-Zn-type oxide, oxide sintered body, and sputtering targetYANO KOKI·Filed 2010·Granted Jul 22, 2014·2 cites·11 claims
- 2066US9209257B2Oxide sintered body and sputtering targetIDEMITSU KOSAN CO·Filed 2013·Granted Dec 8, 2015·1 cites·13 claims
- 2165US2021020784A1SEMICONDUCTOR FILM COMPRISING AN OXIDE CONTAINING IN ATOMS, Sn ATOMS AND Zn ATOMSIDEMITSU KOSAN CO·Filed 2020·Application pending·0 cites
- 2260US10487658B2Turning deviceMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2014·Granted Nov 26, 2019·0 cites·6 claims
- 2360US9054196B2Sputtering target comprising an oxide sintered body comprising In, Ga, and ZnITOSE MASAYUKI·Filed 2012·Granted Jun 9, 2015·1 cites·7 claims
- 2452US2013285053A1Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering TargetIDEMITSU KOSAN CO·Filed 2013·Application pending·0 cites
- 2551US9269573B2Thin film transistor having crystalline indium oxide semiconductor filmINOUE KAZUYOSHI·Filed 2008·Granted Feb 23, 2016·0 cites·15 claims
- 2650US8664136B2Indium oxide sintered compact and sputtering targetINOUE KAZUYOSHI·Filed 2009·Granted Mar 4, 2014·0 cites·25 claims
- 2749US11333044B2Steam turbine, partition member, and method for operating steam turbineMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2017·Granted May 17, 2022·0 cites·9 claims
- 2849US2013234134A1Thin film transistor and method for manufacturing sameIDEMITSU KOSAN CO·Filed 2013·Application pending·0 cites
- 2948US10082044B2Turning apparatusMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2014·Granted Sep 25, 2018·0 cites·3 claims
- 3048US2011006297A1Patterned crystalline semiconductor thin film, method for producing thin film transistor and field effect transistorIDEMITSU KOSAN CO·Filed 2008·Application pending·0 cites
- 3147US10809820B2Touch pen and display device using touch penSHARP KK·Filed 2018·Granted Oct 20, 2020·0 cites·8 claims
- 3247US10227894B2Rotary systemMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2014·Granted Mar 12, 2019·0 cites·4 claims
- 3344US10709028B2Touch pen and display device using touch penSHARP KK·Filed 2018·Granted Jul 7, 2020·0 cites·6 claims
- 3444US10443513B2Emergency shutoff device and emergency shutoff system provided with sameMITSUBISHI HEAVY IND COMPRESSOR CORP·Filed 2014·Granted Oct 15, 2019·0 cites·7 claims
- 3544US2010295042A1Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor deviceIDEMITSU KOSAN CO·Filed 2009·Application pending·0 cites
- 3637US2012184066A1SINTERED In-Ga-Zn-O-TYPE OXIDEYANO KOKI·Filed 2010·Application pending·0 cites
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