Inventor · disambiguated record
Fu-Chih Yang
Also filed as: YANG FU-CHIH
99 granted patents·3 pending applications·279 citations·filing 2002–2023
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD48TAIWAN SEMICONDUCTOR MFG25SU RU-YI8WONG KING-YUEN4Yao fu-wei3
Top patents by PatentIndex Score
102 records- 0197US11404557B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0297US9379191B2High electron mobility transistor including an isolation regionHSU CHUN-WEI·Filed 2011·Granted Jun 28, 2016·27 cites·20 claims
- 0394US10050117B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0493US9111905B2High electron mobility transistor and method of forming the sameYao fu-wei·Filed 2012·Granted Aug 18, 2015·12 cites·20 claims
- 0593US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 0692US9373619B2High voltage resistor with high voltage junction terminationSU RU-YI·Filed 2011·Granted Jun 21, 2016·11 cites·20 claims
- 0792US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0892US8624322B1High voltage device with a parallel resistorSU RU-YI·Filed 2012·Granted Jan 7, 2014·15 cites·20 claims
- 0991US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 1091US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 1190US10790375B2High electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·3 cites·20 claims
- 1290US9680009B2High voltage semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·8 cites·20 claims
- 1390US8507920B2Semiconductor structure and method of forming the sameCHEN PO-CHIH·Filed 2011·Granted Aug 13, 2013·12 cites·20 claims
- 1489US8680535B2High electron mobility transistor structure with improved breakdown voltage performanceYao fu-wei·Filed 2012·Granted Mar 25, 2014·7 cites·20 claims
- 1589US8587018B2LED structure having embedded zener diodeHSIA SHOULI STEVE·Filed 2011·Granted Nov 19, 2013·11 cites·19 claims
- 1688US9704968B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·3 cites·17 claims
- 1788US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 1888US8629513B2HV interconnection solution using floating conductorsSU RU-YI·Filed 2011·Granted Jan 14, 2014·10 cites·14 claims
- 1988US8598679B2Stacked and tunable power fuseCHENG CHIH-CHANG·Filed 2010·Granted Dec 3, 2013·8 cites·20 claims
- 2087US12230690B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 2187US10741665B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·2 cites·20 claims
- 2287US9508807B2Method of forming high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·3 cites·20 claims
- 2387US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 2487US8587073B2High voltage resistorCHENG CHIH-CHANG·Filed 2010·Granted Nov 19, 2013·8 cites·20 claims
- 2586US9147743B2High electron mobility transistor structure with improved breakdown voltage performanceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 29, 2015·4 cites·20 claims
- 2686US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 2785US11410991B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·1 cites·20 claims
- 2885US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 2985US8697505B2Method of forming a semiconductor structureCHEN PO-CHIH·Filed 2011·Granted Apr 15, 2014·6 cites·20 claims
- 3083US8803232B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesHUO KER HSIAO·Filed 2011·Granted Aug 12, 2014·6 cites·18 claims
- 3181US8680616B2High side gate driver deviceSU RU-YI·Filed 2010·Granted Mar 25, 2014·5 cites·7 claims
- 3279US11804538B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 3379US8946771B2Gallium nitride semiconductor devices and method making thereofHSIUNG CHIH-WEN·Filed 2011·Granted Feb 3, 2015·7 cites·17 claims
- 3479US8841703B2High electron mobility transistor and method of forming the sameWONG KING-YUEN·Filed 2011·Granted Sep 23, 2014·4 cites·20 claims
- 3578US2024014260A1High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3676US10923467B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·1 cites·20 claims
- 3776US10867990B2Series resistor over drain region in high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·20 claims
- 3876US9257533B2Method of making an insulated gate bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 3973US9911734B2Semiconductor device containing HEMT and MISFET and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·20 claims
- 4073US9184259B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 4173US9035379B2High voltage and ultra-high voltage semiconductor devices with increased breakdown voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 19, 2015·2 cites·20 claims
- 4272US8921893B2Circuit structure having islands between source and drainYU CHEN-JU·Filed 2011·Granted Dec 30, 2014·2 cites·19 claims
- 4371US9583588B2Method of making high electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 4470US11676997B2High voltage resistor with high voltage junction terminationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·0 cites·20 claims
- 4568US9111956B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 4667US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 4767US9224829B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·1 cites·20 claims
- 4867US9093494B2Guard structure for semiconductor structure and method of forming guard layout pattern for semiconductor layout patternTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·2 cites·20 claims
- 4966US10522630B2High electron mobility transistor structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 5064US10868135B2High electron mobility transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
Showing the top 50 of 102 patent records by PatentIndex Score.
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