Inventor · disambiguated record
Seow Fong Lim
Also filed as: LIM SEOW FONG · LIM SEOW-FONG (DENNIS)
39 granted patents·1 pending application·166 citations·filing 2010–2021
97Inventor score
Files withWINBOND ELECTRONICS CORP23UNITY SEMICONDUCTOR CORP12SIAU CHANG HUA2CHEVALLIER CHRISTOPHE J1LIN CHI-SHUN1
Top patents by PatentIndex Score
40 records- 0197US8363443B2Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arraysUNITY SEMICONDUCTOR CORP·Filed 2011·Granted Jan 29, 2013·28 cites·24 claims
- 0297US8270193B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysSIAU CHANG HUA·Filed 2010·Granted Sep 18, 2012·39 cites·23 claims
- 0393US9576652B1Resistive random access memory apparatus with forward and reverse reading modesWINBOND ELECTRONICS CORP·Filed 2016·Granted Feb 21, 2017·11 cites·11 claims
- 0491US10650870B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2019·Granted May 12, 2020·3 cites·20 claims
- 0591US10439829B1Physical unclonable function code generating method and providing apparatus thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Oct 8, 2019·9 cites·12 claims
- 0691US8427868B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryCHEVALLIER CHRISTOPHE J·Filed 2011·Granted Apr 23, 2013·10 cites·27 claims
- 0790US9384806B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Jul 5, 2016·6 cites·20 claims
- 0890US8854881B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Oct 7, 2014·7 cites·19 claims
- 0987US9870809B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Jan 16, 2018·4 cites·20 claims
- 1086US10700878B1Physical unclonable function code generation apparatus and method thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Jun 30, 2020·5 cites·19 claims
- 1185US10210917B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2018·Granted Feb 19, 2019·3 cites·20 claims
- 1284US9129668B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Sep 8, 2015·4 cites·19 claims
- 1383US8705260B2Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross point arraysUNITY SEMICONDUCTOR CORP·Filed 2012·Granted Apr 22, 2014·4 cites·20 claims
- 1482US11270764B2Two-bit memory cell and circuit structure calculated in memory thereofNANJING UCUN TECH INC·Filed 2021·Granted Mar 8, 2022·2 cites·11 claims
- 1582US8897050B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysSIAU CHANG HUA·Filed 2012·Granted Nov 25, 2014·4 cites·28 claims
- 1680US10811092B1RRAM with plurality of 1TnR structuresWINBOND ELECTRONICS CORP·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 1776US10002646B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Jun 19, 2018·3 cites·21 claims
- 1874US9859000B1Apparatus for providing adjustable reference voltage for sensing read-out data for memoryWINBOND ELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·4 cites·15 claims
- 1972US11398256B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysUNITY SEMICONDUCTOR CORP·Filed 2020·Granted Jul 26, 2022·0 cites·14 claims
- 2072US10853167B2Memory apparatus having hierarchical error correction code layerWINBOND ELECTRONICS CORP·Filed 2019·Granted Dec 1, 2020·1 cites·13 claims
- 2172US10419004B2NVFF monotonic counter and method of implementing sameWINBOND ELECTRONICS CORP·Filed 2017·Granted Sep 17, 2019·2 cites·19 claims
- 2271US11069386B2Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
- 2371US11010245B2Memory storage apparatus with dynamic data repair mechanism and method of dynamic data repair thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted May 18, 2021·1 cites·14 claims
- 2471US10216570B2Memory device and control method thereofWINBOND ELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·3 cites·18 claims
- 2567US10937495B2Resistive memory apparatus and method for writing data thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Mar 2, 2021·2 cites·25 claims
- 2666US10032512B2Non-volatile semiconductor memory deviceWINBOND ELECTRONICS CORP·Filed 2017·Granted Jul 24, 2018·2 cites·11 claims
- 2762US11520526B2Write method for resistive memoryWINBOND ELECTRONICS CORP·Filed 2021·Granted Dec 6, 2022·0 cites·19 claims
- 2861US10714157B1Non-volatile memory and reset method thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Jul 14, 2020·1 cites·20 claims
- 2961US10490272B2Operating method of resistive memory elementWINBOND ELECTRONICS CORP·Filed 2018·Granted Nov 26, 2019·1 cites·9 claims
- 3061US8665651B1Reference cell circuit and method of producing a reference currentLIN CHI-SHUN·Filed 2012·Granted Mar 4, 2014·3 cites·21 claims
- 3153US11314588B2Memory device and multi physical cells error correction method thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Apr 26, 2022·0 cites·16 claims
- 3253US10622028B2Local bit lines and methods of selecting the same to access memory elements in cross-point arraysUNITY SEMICONDUCTOR CORP·Filed 2018·Granted Apr 14, 2020·0 cites·20 claims
- 3351US10261692B1Non-volatile memory and erase controlling method thereofWINBOND ELECTRONICS CORP·Filed 2017·Granted Apr 16, 2019·0 cites·16 claims
- 3448US11055021B2Resistive memoryWINBOND ELECTRONICS CORP·Filed 2019·Granted Jul 6, 2021·0 cites·7 claims
- 3545US11620500B2Synapse system and synapse method to realize STDP operationWINBOND ELECTRONICS CORP·Filed 2018·Granted Apr 4, 2023·0 cites·20 claims
- 3644US10514980B2Encoding method and memory storage apparatus using the sameWINBOND ELECTRONICS CORP·Filed 2018·Granted Dec 24, 2019·0 cites·15 claims
- 3741US11088711B2Memory apparatus and data accessing method thereofWINBOND ELECTRONICS CORP·Filed 2019·Granted Aug 10, 2021·0 cites·16 claims
- 3840US10372535B2Encoding method and a memory storage apparatus using the sameWINBOND ELECTRONICS CORP·Filed 2017·Granted Aug 6, 2019·0 cites·14 claims
- 3938US10262732B2Programmable array logic circuit and operating method thereofWINBOND ELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·0 cites·20 claims
- 4036US2019294497A1Method of implementing error correction code used by memory storage apparatus and memory storage apparatus using the sameWINBOND ELECTRONICS CORP·Filed 2018·Application pending·0 cites
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