Inventor · disambiguated record
Toshiro Usami
Also filed as: USAMI TOSHIRO
14 granted patents·434 citations·filing 1982–1995
94Inventor score
Top patents by PatentIndex Score
14 records- 0191US4958373ADefect-recognition processing apparatusTOSHIBA KK·Filed 1988·Granted Sep 18, 1990·90 cites·14 claims
- 0285US4893273ASemiconductor memory device for storing image dataTOSHIBA KK·Filed 1986·Granted Jan 9, 1990·53 cites·9 claims
- 0383US4597159AMethod of manufacturing SiO2 -Si interface for floating gate semiconductor deviceTOSHIBA KK·Filed 1985·Granted Jul 1, 1986·44 cites·6 claims
- 0470US5210400ASolid-state imaging device applicable to high sensitivity color camera and using diffraction gratingsTOSHIBA KK·Filed 1991·Granted May 11, 1993·44 cites·9 claims
- 0566US5378652AMethod of making a through hole in multi-layer insulating filmsTOSHIBA KK·Filed 1991·Granted Jan 3, 1995·37 cites·6 claims
- 0665US4515755AApparatus for producing a silicon single crystal from a silicon meltTOSHIBA CERAMICS CO·Filed 1982·Granted May 7, 1985·19 cites·11 claims
- 0764US5238859AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1991·Granted Aug 24, 1993·39 cites·3 claims
- 0860US5032535AMethod of manufacturing semiconductor deviceTOSHIBA KK·Filed 1989·Granted Jul 16, 1991·27 cites·6 claims
- 0958US5291058ASemiconductor device silicon via fill formed in multiple dielectric layersTOSHIBA KK·Filed 1992·Granted Mar 1, 1994·26 cites·4 claims
- 1052US4879585ASemiconductor deviceTOSHIBA KK·Filed 1988·Granted Nov 7, 1989·19 cites·12 claims
- 1146US5181088AVertical field effect transistor with an extended polysilicon channel regionTOSHIBA KK·Filed 1991·Granted Jan 19, 1993·11 cites·4 claims
- 1245US5612236AMethod of forming a silicon semiconductor device using doping during deposition of polysiliconTOSHIBA KK·Filed 1995·Granted Mar 18, 1997·10 cites·11 claims
- 1343US5149666AMethod of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grainsTOSHIBA KK·Filed 1991·Granted Sep 22, 1992·9 cites·4 claims
- 1439US5031010ASemiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 1990·Granted Jul 9, 1991·6 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →