Inventor · disambiguated record
Shou-Wei Hwang
Also filed as: HWANG SHOU-WEI
9 granted patents·3 pending applications·96 citations·filing 2001–2001
87Inventor score
Files withMACRONIX INT CO LTD12
Top patents by PatentIndex Score
12 records- 0180US6387750B1Method of forming MIM capacitorMACRONIX INT CO LTD·Filed 2001·Granted May 14, 2002·32 cites·16 claims
- 0271US6468867B1Method for forming the partial salicideMACRONIX INT CO LTD·Filed 2001·Granted Oct 22, 2002·18 cites·18 claims
- 0369US6559010B1Method for forming embedded non-volatile memoryMACRONIX INT CO LTD·Filed 2001·Granted May 6, 2003·12 cites·15 claims
- 0467US6372640B1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Granted Apr 16, 2002·15 cites·13 claims
- 0557US6511882B1Method for preventing the leakage path in embedded non-volatile memoryMACRONIX INT CO LTD·Filed 2001·Granted Jan 28, 2003·6 cites·19 claims
- 0651US6548406B2Method for forming integrated circuit having MONOS device and mixed-signal circuitMACRONIX INT CO LTD·Filed 2001·Granted Apr 15, 2003·5 cites·20 claims
- 0751US6383903B1Method for forming the partial salicideMACRONIX INT CO LTD·Filed 2001·Granted May 7, 2002·5 cites·15 claims
- 0843US6599793B2Memory array with salicide isolationMACRONIX INT CO LTD·Filed 2001·Granted Jul 29, 2003·1 cites·7 claims
- 0943US6482738B1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·2 cites·17 claims
- 1033US2003027420A1Method for forming the partial salicideMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 1133US2003027421A1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 1232US2003027422A1Method of locally forming metal silicide layersMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →