Inventor · disambiguated record
Jean Y. Yang
Also filed as: YANG JEAN · YANG JEAN Y · YANG JEAN YEE-MEI
68 granted patents·2 pending applications·2,505 citations·filing 1997–2013
99Inventor score
Top patents by PatentIndex Score
70 records- 0198US6994939B1Semiconductor manufacturing resolution enhancement system and method for simultaneously patterning different feature typesADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 7, 2006·228 cites·28 claims
- 0298US6541816B2Planar structure for non-volatile memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·126 cites·17 claims
- 0398US6445030B1Flash memory erase speed by fluorine implant or fluorinationADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 3, 2002·212 cites·22 claims
- 0497US7115469B1Integrated ONO processing for semiconductor devices using in-situ steam generation (ISSG) processSPANSION LLC·Filed 2004·Granted Oct 3, 2006·135 cites·20 claims
- 0596US7018868B1Disposable hard mask for memory bitline scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·95 cites·19 claims
- 0696US6897533B1Multi-bit silicon nitride charge-trapping non-volatile memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted May 24, 2005·118 cites·9 claims
- 0796US6468865B1Method of simultaneous formation of bitline isolation and periphery oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·97 cites·30 claims
- 0896US6436768B1Source drain implant during ONO formation for improved isolation of SONOS devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 20, 2002·152 cites·22 claims
- 0995US6555436B2Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·56 cites·13 claims
- 1094US6927145B1Bitline hard mask spacer flow for memory cell scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·68 cites·17 claims
- 1194US6670241B1Semiconductor memory with deuterated materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·79 cites·8 claims
- 1293US6465306B1Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·46 cites·21 claims
- 1392US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 1492US6440797B1Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·104 cites·20 claims
- 1591US6803275B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2002·Granted Oct 12, 2004·46 cites·19 claims
- 1690US6949481B1Process for fabrication of spacer layer with reduced hydrogen content in semiconductor deviceFASL LLC·Filed 2003·Granted Sep 27, 2005·50 cites·20 claims
- 1790US6680509B1Nitride barrier layer for protection of ONO structure from top oxide loss in fabrication of SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·80 cites·19 claims
- 1890US6653190B1Flash memory with controlled wordline widthADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 25, 2003·44 cites·20 claims
- 1990US6617215B1Memory wordline hard maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·47 cites·20 claims
- 2089US6653191B1Memory manufacturing process using bitline rapid thermal annealADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·40 cites·18 claims
- 2188US6744105B1Memory array having shallow bit line with silicide contact portion and method of formationADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 1, 2004·47 cites·8 claims
- 2286US6754106B1Reference cell with various load circuits compensating for source side loading effects in a non-volatile memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·39 cites·23 claims
- 2386US6707078B1Dummy wordline for erase and bitline leakageFASL LLC·Filed 2002·Granted Mar 16, 2004·39 cites·20 claims
- 2486US6479348B1Method of making memory wordline hard mask extensionADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 12, 2002·31 cites·20 claims
- 2585US6969886B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2004·Granted Nov 29, 2005·28 cites·20 claims
- 2685US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 2785US6797565B1Methods for fabricating and planarizing dual poly scalable SONOS flash memoryADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·28 cites·22 claims
- 2883US6955965B1Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor deviceFASL LLC·Filed 2003·Granted Oct 18, 2005·26 cites·20 claims
- 2981US6765254B1Structure and method for preventing UV radiation damage and increasing data retention in memory cellsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·30 cites·13 claims
- 3079US6869844B1Method and structure for protecting NROM devices from induced charge damage during device fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 22, 2005·23 cites·20 claims
- 3179US6362051B1Method of forming ONO flash memory devices using low energy nitrogen implantationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 26, 2002·22 cites·16 claims
- 3278US7696094B2Method for improved planarization in semiconductor devicesSPANSION LLC·Filed 2006·Granted Apr 13, 2010·6 cites·17 claims
- 3378US7163860B1Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory deviceSPANSION LLC·Filed 2003·Granted Jan 16, 2007·25 cites·19 claims
- 3478US6767791B1Structure and method for suppressing oxide encroachment in a floating gate memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 27, 2004·22 cites·14 claims
- 3577US6855608B1Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·17 cites·24 claims
- 3676US7750407B2Strapping contact for charge protectionSPANSION LLC·Filed 2006·Granted Jul 6, 2010·4 cites·20 claims
- 3776US7307027B1Void free interlayer dielectricADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 11, 2007·5 cites·11 claims
- 3874US6933219B1Tightly spaced gate formation through damascene processADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 23, 2005·19 cites·12 claims
- 3973US6987048B1Memory device having silicided bitlines and method of forming the sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 17, 2006·29 cites·5 claims
- 4073US6500768B1Method for selective removal of ONO layerADVANCE MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·16 cites·6 claims
- 4166US6667212B1Alignment system for planar charge trapping dielectric memory cell lithographyADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 23, 2003·13 cites·24 claims
- 4266US6620717B1Memory with disposable ARC for wordline formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·10 cites·20 claims
- 4366US6395654B1Method of forming ONO flash memory devices using rapid thermal oxidationADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·12 cites·14 claims
- 4465US7977218B2Thin oxide dummy tiling as charge protectionSPANSION LLC·Filed 2006·Granted Jul 12, 2011·3 cites·20 claims
- 4564US6706595B2Hard mask process for memory device without bitline shortsADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·9 cites·20 claims
- 4664US6403420B1Nitrogen implant after bit-line formation for ONO flash memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 11, 2002·9 cites·16 claims
- 4763US6627887B1System and method for constructing a profile of a structure in an integrated circuitADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 30, 2003·9 cites·32 claims
- 4862US7553727B2Using implanted poly-1 to improve charging protection in dual-poly processSPANSION LLC·Filed 2007·Granted Jun 30, 2009·2 cites·15 claims
- 4961US6989563B1Flash memory cell with UV protective layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 24, 2006·9 cites·9 claims
- 5058US6441398B2Algorithm for detecting sloped contact holes using a critical-dimension waveformADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 27, 2002·6 cites·5 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →