Inventor · disambiguated record
Ju-Bum Lee
Also filed as: LEE JU-BUM
15 granted patents·6 pending applications·278 citations·filing 1995–2011
93Inventor score
Top patents by PatentIndex Score
21 records- 0190US7033909B2Method of forming trench isolationsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·65 cites·21 claims
- 0290US6762126B2Method of forming an interlayer dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 13, 2004·52 cites·36 claims
- 0388US7459745B2Methods of forming capacitors for semiconductor memory devices and resulting semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 2, 2008·15 cites·4 claims
- 0484US6563162B2Semiconductor memory device for reducing parasitic bit line capacitance and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 13, 2003·40 cites·28 claims
- 0583US7125774B2Method of manufacturing transistor having recessed channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 24, 2006·28 cites·18 claims
- 0682US7288454B2Methods of forming capacitors for semiconductor memory devices and resulting semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 30, 2007·9 cites·14 claims
- 0782US6372672B1Method of forming a silicon nitride layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 16, 2002·28 cites·20 claims
- 0881US7335589B2Method of forming contact via through multiple layers of dielectric materialSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 26, 2008·9 cites·7 claims
- 0972US7442607B2Method of manufacturing transistor having recessed channelSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·4 cites·7 claims
- 1070US6964922B2Methods for forming metal interconnections for semiconductor devices having multiple metal depositionsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 15, 2005·13 cites·26 claims
- 1160US6645879B2Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 11, 2003·7 cites·26 claims
- 1248US6982223B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 3, 2006·2 cites·13 claims
- 1347US2008111198A1Stacked semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1445US2008020594A1Methods of manufacturing a phase-changeable memory deviceKIM DO-HYUNG·Filed 2007·Application pending·0 cites
- 1543US7049225B2Method for manufacturing vias between conductive patterns utilizing etching mask patterns formed on the conductive patternsSUMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 23, 2006·1 cites·19 claims
- 1643US2007120230A1Layer structure, method of forming the layer structure, method of manufacturing a capacitor using the same and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1743US2011101467A1Stacked semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 1841US7439150B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·0 cites·20 claims
- 1940US2005136686A1Gap-fill method using high density plasma chemical vapor deposition process and method of manufacturing integrated circuit deviceFiled 2004·Application pending·0 cites
- 2039US2005101143A1Methods of fabricating a semiconductor device and forming a trench region in a semiconductor deviceFiled 2004·Application pending·0 cites
- 2138US5670400AMethod for making dual gate insulating film without edge-thinningSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Sep 23, 1997·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →