Inventor · disambiguated record
Hironobu Miyamoto
Also filed as: MIYAMOTO HIRONOBU
92 granted patents·24 pending applications·1,039 citations·filing 1988–2024
99Inventor score
Top patents by PatentIndex Score
116 records- 0196US9846541B2Memory system for controlling perforamce by adjusting amount of parallel operationsTOSHIBA MEMORY CORP·Filed 2015·Granted Dec 19, 2017·65 cites·16 claims
- 0296US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0395US7859014B2Semiconductor deviceNEC CORP·Filed 2005·Granted Dec 28, 2010·46 cites·18 claims
- 0495US7800131B2Field effect transistorNEC CORP·Filed 2006·Granted Sep 21, 2010·48 cites·17 claims
- 0595US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0694US9559183B2Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 31, 2017·14 cites·12 claims
- 0794US8674407B2Semiconductor device using a group III nitride-based semiconductorANDO YUJI·Filed 2009·Granted Mar 18, 2014·37 cites·12 claims
- 0894US7863648B2Field effect transistorNEC CORP·Filed 2006·Granted Jan 4, 2011·38 cites·15 claims
- 0993US9306027B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 5, 2016·13 cites·7 claims
- 1093US8853666B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorINOUE TAKASHI·Filed 2006·Granted Oct 7, 2014·26 cites·21 claims
- 1192US9306051B2Semiconductor device using a nitride semiconductorRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 5, 2016·9 cites·20 claims
- 1291US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 1390US10050142B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Aug 14, 2018·5 cites·12 claims
- 1490US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 1589US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 1688US9520489B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 13, 2016·6 cites·14 claims
- 1787US9722062B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 1, 2017·4 cites·14 claims
- 1886US8725932B2Memory system and method of controlling memory systemYANO HIROKUNI·Filed 2009·Granted May 13, 2014·18 cites·24 claims
- 1985US9984884B2Method of manufacturing semiconductor device with a multi-layered gate dielectricRENESAS ELECTRONICS CORP·Filed 2016·Granted May 29, 2018·3 cites·3 claims
- 2085US8716755B2Semiconductor device and method for manufacturing the sameINOUE TAKASHI·Filed 2012·Granted May 6, 2014·5 cites·10 claims
- 2183US9954087B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 24, 2018·5 cites·6 claims
- 2283US7973335B2Field-effect transistor having group III nitride electrode structureNEC CORP·Filed 2003·Granted Jul 5, 2011·33 cites·12 claims
- 2382US10199476B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Feb 5, 2019·3 cites·9 claims
- 2482US9601609B2Semiconductor deviceRenesas Electronics Electronics·Filed 2014·Granted Mar 21, 2017·6 cites·6 claims
- 2582US8930614B2Data storage apparatus and method for compaction processingMASUO YOKO·Filed 2012·Granted Jan 6, 2015·8 cites·15 claims
- 2682US8426895B2Semiconductor device and manufacturing method of the sameOKAMOTO YASUHIRO·Filed 2009·Granted Apr 23, 2013·9 cites·10 claims
- 2781US6534790B2Compound semiconductor field effect transistorNEC CORP·Filed 2001·Granted Mar 18, 2003·28 cites·28 claims
- 2880US10109730B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 23, 2018·2 cites·5 claims
- 2980US8963207B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 24, 2015·4 cites·20 claims
- 3080US8659055B2Semiconductor device, field-effect transistor, and electronic deviceOKAMOTO YASUHIRO·Filed 2010·Granted Feb 25, 2014·6 cites·11 claims
- 3179US10014403B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Jul 3, 2018·2 cites·11 claims
- 3279US8618578B2Field effect transistorOTA KAZUKI·Filed 2010·Granted Dec 31, 2013·6 cites·10 claims
- 3379US8198652B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2007·Granted Jun 12, 2012·7 cites·9 claims
- 3479US7985984B2III-nitride semiconductor field effect transistorNEC CORP·Filed 2008·Granted Jul 26, 2011·7 cites·9 claims
- 3579US7256432B2Field-effect transistorNEC CORP·Filed 2003·Granted Aug 14, 2007·25 cites·20 claims
- 3679US2024290881A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3778US8583859B2Storage controller for wear-leveling and compaction and method of controlling thereofMASUO YOKO·Filed 2011·Granted Nov 12, 2013·6 cites·8 claims
- 3876US10833188B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Nov 10, 2020·1 cites·19 claims
- 3976US9070661B2Semiconductor device including a strain relaxation filmRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 30, 2015·3 cites·23 claims
- 4074US10388779B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Granted Aug 20, 2019·1 cites·16 claims
- 4174US8225058B2Memory system managing a size of logsMIYAMOTO HIRONOBU·Filed 2009·Granted Jul 17, 2012·8 cites·26 claims
- 4274US2023207689A1Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 4373US9978642B2III-V nitride semiconductor device having reduced contact resistanceRENESAS ELECTRONICS CORP·Filed 2016·Granted May 22, 2018·2 cites·14 claims
- 4473US8344422B2Semiconductor deviceNEC CORP·Filed 2008·Granted Jan 1, 2013·5 cites·8 claims
- 4573US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 4673US2023077367A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 4771US10229992B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Mar 12, 2019·1 cites·20 claims
- 4870US9502551B2Nitride semiconductor transistor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·1 cites·14 claims
- 4969US11631764B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2020·Granted Apr 18, 2023·0 cites·6 claims
- 5069US10243070B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Mar 26, 2019·1 cites·17 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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