Inventor · disambiguated record
Muhammed Ayman Shibib
Also filed as: SHIBIB MUHAMMED A · SHIBIB MUHAMMED AYMAN
45 granted patents·4 pending applications·798 citations·filing 1982–2018
98Inventor score
Files withAGERE SYSTEMS INC19LUCENT TECHNOLOGIES INC10AT & T CORP5AT & T BELL LAB2CICLON SEMICONDUCTOR DEVICE CO2
Top patents by PatentIndex Score
49 records- 0193US5360987ASemiconductor photodiode device with isolation regionAT & T BELL LAB·Filed 1993·Granted Nov 1, 1994·133 cites·12 claims
- 0292US7148540B2Graded conductive structure for use in a metal-oxide-semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted Dec 12, 2006·65 cites·25 claims
- 0392US6927453B2Metal-oxide-semiconductor device including a buried lightly-doped drain regionAGERE SYSTEMS INC·Filed 2003·Granted Aug 9, 2005·59 cites·14 claims
- 0490US7820517B2Control of hot carrier injection in a metal-oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2007·Granted Oct 26, 2010·17 cites·14 claims
- 0590US6890804B1Metal-oxide-semiconductor device formed in silicon-on-insulatorAGERE SYSTEMS INC·Filed 2003·Granted May 10, 2005·38 cites·21 claims
- 0687US7126193B2Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2003·Granted Oct 24, 2006·38 cites·14 claims
- 0784US7005703B2Metal-oxide-semiconductor device having improved performance and reliabilityAGERE SYSTEMS INC·Filed 2003·Granted Feb 28, 2006·28 cites·22 claims
- 0883US6303961B1Complementary semiconductor devicesAQERE SYSTEMS GUARDIAN CORP·Filed 1998·Granted Oct 16, 2001·67 cites·2 claims
- 0983US5534721AArea-efficient layout for high voltage lateral devicesAT & T CORP·Filed 1994·Granted Jul 9, 1996·53 cites·19 claims
- 1078US6828628B2Diffused MOS devices with strained silicon portions and methods for forming sameAGERE SYSTEMS INC·Filed 2003·Granted Dec 7, 2004·25 cites·20 claims
- 1174US6372600B1Etch stops and alignment marks for bonded wafersAGERE SYST GUARDIAN CORP·Filed 1999·Granted Apr 16, 2002·45 cites·17 claims
- 1273US7087959B2Metal-oxide-semiconductor device having an enhanced shielding structureAGERE SYSTEMS INC·Filed 2004·Granted Aug 8, 2006·17 cites·21 claims
- 1372US6559011B1Dual level gate process for hot carrier control in double diffused MOS transistorsFiled 2000·Granted May 6, 2003·17 cites·7 claims
- 1471US8153484B2Metal-oxide-semiconductor device having trenched diffusion region and method of forming sameSHIBIB MUHAMMED AYMAN·Filed 2007·Granted Apr 10, 2012·3 cites·15 claims
- 1568US7297606B2Metal-oxide-semiconductor device including a buried lightly-doped drain regionAGERE SYSTEMS INC·Filed 2005·Granted Nov 20, 2007·3 cites·17 claims
- 1665US8193565B2Multi-level lateral floating coupled capacitor transistor structuresYANG ROBERT KUO-CHANG·Filed 2009·Granted Jun 5, 2012·2 cites·22 claims
- 1765US6228750B1Method of doping a semiconductor surfaceLUCENT TECHNOLOGIES INC·Filed 1997·Granted May 8, 2001·30 cites·19 claims
- 1864US7579245B2Dual-gate metal-oxide-semiconductor deviceAGERE SYSTEMS INC·Filed 2007·Granted Aug 25, 2009·2 cites·19 claims
- 1960US7279744B2Control of hot carrier injection in a metal-oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted Oct 9, 2007·8 cites·16 claims
- 2059US7335565B2Metal-oxide-semiconductor device having improved performance and reliabilityAGERE SYSTEMS INC·Filed 2006·Granted Feb 26, 2008·1 cites·18 claims
- 2155US7329922B2Dual-gate metal-oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted Feb 12, 2008·5 cites·18 claims
- 2254US6762457B2LDMOS device having a tapered oxideAGERE SYSTEMS INC·Filed 2002·Granted Jul 13, 2004·3 cites·8 claims
- 2354US6576506B2Electrostatic discharge protection in double diffused MOS transistorsAGERE SYSTEMS INC·Filed 2001·Granted Jun 10, 2003·5 cites·6 claims
- 2452US7041561B2Enhanced substrate contact for a semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted May 9, 2006·5 cites·19 claims
- 2552US6140170AManufacture of complementary MOS and bipolar integrated circuitsLUCENT TECHNOLOGIES INC·Filed 1999·Granted Oct 31, 2000·13 cites·8 claims
- 2651US8648445B2Metal-oxide-semiconductor device having trenched diffusion region and method of forming sameSHIBIB MUHAMMED AYMAN·Filed 2012·Granted Feb 11, 2014·0 cites·22 claims
- 2751US6506641B1Use of selective oxidation to improve LDMOS power transistorsAGERE SYSTEMS INC·Filed 2000·Granted Jan 14, 2003·2 cites·9 claims
- 2850US8580644B2Multi-level lateral floating coupled capacitor transistor structuresYANG ROBERT KUO-CHANG·Filed 2012·Granted Nov 12, 2013·0 cites·22 claims
- 2950US5670396AMethod of forming a DMOS-controlled lateral bipolar transistorLUCENT TECHNOLOGIES INC·Filed 1995·Granted Sep 23, 1997·13 cites·20 claims
- 3050US5381031ASemiconductor device with reduced high voltage termination area and high breakdown voltageAT & T CORP·Filed 1993·Granted Jan 10, 1995·19 cites·5 claims
- 3147US7190563B2Electrostatic discharge protection in a semiconductor deviceAGERE SYSTEMS INC·Filed 2003·Granted Mar 13, 2007·3 cites·20 claims
- 3247US7067890B2Thick oxide region in a semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted Jun 27, 2006·2 cites·11 claims
- 3347US6013934ASemiconductor structure for thermal shutdown protectionLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jan 11, 2000·10 cites·22 claims
- 3447US5541429AHigh voltage semiconductor device having improved electrical ruggedness and reduced cell pitchAT & T CORP·Filed 1995·Granted Jul 30, 1996·11 cites·6 claims
- 3546US5395776AMethod of making a rugged DMOS deviceAT & T CORP·Filed 1993·Granted Mar 7, 1995·10 cites·9 claims
- 3646US2008296636A1Devices and integrated circuits including lateral floating capacitively coupled structuresDARWISH MOHAMED N·Filed 2008·Application pending·0 cites
- 3745US5773338ABipolar transistor with MOS-controlled protection for reverse-biased emitter-based junctionLUCENT TECHNOLOGIES INC·Filed 1995·Granted Jun 30, 1998·8 cites·17 claims
- 3845US2007007593A1Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2006·Application pending·0 cites
- 3945US2006071270A1Metal-oxide-semiconductor device having trenched diffusion region and method of forming sameSHIBIB MUHAMMED A·Filed 2004·Application pending·0 cites
- 4044US5420457ALateral high-voltage PNP transistorAT & T CORP·Filed 1993·Granted May 30, 1995·9 cites·15 claims
- 4143US6821831B2Electrostatic discharge protection in double diffused MOS transistorsAGERE SYSTEMS INC·Filed 2003·Granted Nov 23, 2004·1 cites·5 claims
- 4242US5894154AP-channel MOS transistorLUCENT TECHNOLOGIES INC·Filed 1996·Granted Apr 13, 1999·8 cites·1 claims
- 4341US5728607AMethod of making a P-channel bipolar transistorLUCENT TECHNOLOGIES INC·Filed 1996·Granted Mar 17, 1998·7 cites·2 claims
- 4440US5949128ABipolar transistor with MOS-controlled protection for reverse-biased emitter-base junctionLUCENT TECHNOLOGIES INC·Filed 1998·Granted Sep 7, 1999·5 cites·29 claims
- 4534US2005110083A1Metal-oxide-semiconductor device having improved gate arrangementFiled 2003·Application pending·0 cites
- 4633US5959342ASemiconductor device having a high voltage termination improvementLUCENT TECHNOLOGIES INC·Filed 1993·Granted Sep 28, 1999·3 cites·3 claims
- 4733US5557125ADielectrically isolated semiconductor devices having improved characteristicsLUCENT TECHNOLOGIES INC·Filed 1993·Granted Sep 17, 1996·5 cites·7 claims
- 4832US10693288B2Protection circuits with negative gate swing capabilityVISHAY SILICONIX·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 4929US4573065ARadial high voltage switch structureAT & T BELL LAB·Filed 1982·Granted Feb 25, 1986·0 cites·15 claims
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