Inventor · disambiguated record
Byong-Hyun Jang
Also filed as: JANG BYONG-HYUN
11 granted patents·1 pending application·201 citations·filing 2011–2017
90Inventor score
Top patents by PatentIndex Score
12 records- 0196US9431414B2Vertical memory devices and methods of manufacturing the sameJANG BYONG-HYUN·Filed 2014·Granted Aug 30, 2016·79 cites·12 claims
- 0296US9324730B2Vertical memory devices and methods of manufacturing the sameNAM PHIL-OUK·Filed 2015·Granted Apr 26, 2016·26 cites·20 claims
- 0395US9130054B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 8, 2015·29 cites·15 claims
- 0495US8987805B2Vertical type semiconductor devices including oxidation target layersNAM PHIL-OUK·Filed 2013·Granted Mar 24, 2015·25 cites·19 claims
- 0592US9653565B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 16, 2017·13 cites·5 claims
- 0691US8697498B2Methods of manufacturing three dimensional semiconductor memory devices using sub-platesJANG BYONG-HYUN·Filed 2011·Granted Apr 15, 2014·18 cites·10 claims
- 0777US10103170B2Semiconductor device having a vertical pillar connected to the substrateSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 16, 2018·2 cites·20 claims
- 0876US10559584B2Semiconductor device including a dielectric layerCHOI EUN YEOUNG·Filed 2017·Granted Feb 11, 2020·3 cites·20 claims
- 0975US9397114B2Methods of fabricating three-dimensional semiconductor memory devicesYUN JUMI·Filed 2012·Granted Jul 19, 2016·5 cites·15 claims
- 1064US9082659B1Methods of forming vertical type semiconductor devices including oxidation target layersNAM PHIL-OUK·Filed 2015·Granted Jul 14, 2015·1 cites·9 claims
- 1150US10109747B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 23, 2018·0 cites·19 claims
- 1236US2013270625A1Three-dimensional semiconductor memory devices and methods of fabricating the sameJANG BYONG-HYUN·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →