Inventor · disambiguated record
Naoto Tate
Also filed as: TATE NAOTO
18 granted patents·2 pending applications·1,110 citations·filing 1995–2006
96Inventor score
Files withSHINETSU HANDOTAI KK13SEH AMERICA INC3SOITEC SILICON ON INSULATOR2SHIN ESTU HANDOTAI CO LTD1SHIN ETSU HANDOTAI LTD1
Top patents by PatentIndex Score
20 records- 0199US6372609B1Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Apr 16, 2002·512 cites·16 claims
- 0295US6596610B1Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 22, 2003·108 cites·1 claims
- 0393US5749974AMethod of chemical vapor deposition and reactor thereforSHINETSU HANDOTAI KK·Filed 1995·Granted May 12, 1998·101 cites·4 claims
- 0491US7288418B2Process for treating substrates for the microelectronics industry, and substrates obtained by this processSOITEC SILICON ON INSULATOR·Filed 2006·Granted Oct 30, 2007·20 cites·20 claims
- 0588US6846718B1Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jan 25, 2005·42 cites·3 claims
- 0688US6284629B1Method of fabricating an SOI wafer and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 4, 2001·78 cites·11 claims
- 0788US6022793ASilicon and oxygen ion co-implantation for metallic gettering in epitaxial wafersSEH AMERICA INC·Filed 1997·Granted Feb 8, 2000·84 cites·9 claims
- 0883US7029993B1Method for treating substrates for microelectronics and substrates obtained according to said methodSOITEC SILICON ON INSULATOR·Filed 2000·Granted Apr 18, 2006·31 cites·22 claims
- 0980US6720640B2Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2003·Granted Apr 13, 2004·25 cites·12 claims
- 1070US5755878AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1995·Granted May 26, 1998·30 cites·3 claims
- 1157US5938840AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1998·Granted Aug 17, 1999·17 cites·1 claims
- 1255US6254933B1Method of chemical vapor depositionSHIN ETSU HANDOTAI LTD·Filed 1999·Granted Jul 3, 2001·11 cites·10 claims
- 1352US6897124B2Method of manufacturing a bonded wafers using a Bernoulli chuckSHINETSU HANDOTAI KK·Filed 2002·Granted May 24, 2005·5 cites·12 claims
- 1449US6569749B1Silicon and oxygen ion co-implanation for metallic gettering in epitaxial wafersSEH AMERICA INC·Filed 1999·Granted May 27, 2003·12 cites·14 claims
- 1549US5764353ABack side damage monitoring systemSEH AMERICA INC·Filed 1996·Granted Jun 9, 1998·16 cites·8 claims
- 1643US6072164AHeat-treating method and radiant heating deviceSHIN ESTU HANDOTAI CO LTD·Filed 1997·Granted Jun 6, 2000·12 cites·11 claims
- 1742US2004063298A1Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2003·Application pending·0 cites
- 1840US5718762AMethod for vapor-phase growthSHINETSU HANDOTAI KK·Filed 1996·Granted Feb 17, 1998·5 cites·15 claims
- 1940US2001046746A1Method of fabricating an SOI wafer and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 2001·Application pending·0 cites
- 2030US6048793AMethod and apparatus for thin film growthSHINETSU HANDOTAI KK·Filed 1995·Granted Apr 11, 2000·1 cites·18 claims
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