Inventor · disambiguated record
Martin L. Green
Also filed as: GREEN MARTIN L · GREEN MARTIN LAURENCE
17 granted patents·2 pending applications·1,243 citations·filing 1980–2004
96Inventor score
Files withAGERE SYSTEMS INC6LUCENT TECHNOLOGIES INC4AT & T BELL LAB3AMERICAN TELEPHONE & TELEGRAPH2BELL TELEPHONE LABOR INC2
Top patents by PatentIndex Score
19 records- 0196US5442205ASemiconductor heterostructure devices with strained semiconductor layersAT & T CORP·Filed 1993·Granted Aug 15, 1995·333 cites·23 claims
- 0293US5221413AMethod for making low defect density semiconductor heterostructure and devices made therebyAT & T BELL LAB·Filed 1991·Granted Jun 22, 1993·188 cites·10 claims
- 0392US5861651AField effect devices and capacitors with improved thin film dielectrics and method for making sameLUCENT TECHNOLOGIES INC·Filed 1997·Granted Jan 19, 1999·305 cites·7 claims
- 0489US6723581B1Semiconductor device having a high-K gate dielectric and method of manufacture thereofAGERE SYSTEMS INC·Filed 2002·Granted Apr 20, 2004·48 cites·20 claims
- 0589US4851895AMetallization for integrated devicesAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Jul 25, 1989·87 cites·1 claims
- 0687US6797525B2Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal processAGERE SYSTEMS INC·Filed 2002·Granted Sep 28, 2004·31 cites·18 claims
- 0787US4475983ABase metal composite electrical contact materialAT & T BELL LAB·Filed 1982·Granted Oct 9, 1984·48 cites·15 claims
- 0877US7456064B2High K dielectric material and method of making a high K dielectric materialAGERE SYSTEMS INC·Filed 2003·Granted Nov 25, 2008·17 cites·9 claims
- 0975US4311537ALow-cobalt Fe-Cr-Co permanent magnet alloy processingBELL TELEPHONE LABOR INC·Filed 1980·Granted Jan 19, 1982·18 cites·8 claims
- 1070US5863843AWafer holder for thermal processing apparatusLUCENT TECHNOLOGIES INC·Filed 1996·Granted Jan 26, 1999·44 cites·9 claims
- 1169US5904523AProcess for device fabrication in which a layer of oxynitride is formed at low temperaturesLUCENT TECHNOLOGIES INC·Filed 1997·Granted May 18, 1999·40 cites·5 claims
- 1265US5814562AProcess for semiconductor device fabricationLUCENT TECHNOLOGIES INC·Filed 1995·Granted Sep 29, 1998·32 cites·10 claims
- 1362US4401482AFe--Cr--Co Magnets by powder metallurgy processingBELL TELEPHONE LABOR INC·Filed 1981·Granted Aug 30, 1983·15 cites·7 claims
- 1459US6680130B2High K dielectric material and method of making a high K dielectric materialAGERE SYSTEMS INC·Filed 2002·Granted Jan 20, 2004·5 cites·10 claims
- 1549US4968644AMethod for fabricating devices and devices formed therebyAT & T BELL LAB·Filed 1988·Granted Nov 6, 1990·18 cites·18 claims
- 1647US7223677B2Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrateAGERE SYSTEMS INC·Filed 2004·Granted May 29, 2007·1 cites·17 claims
- 1745US4716050AChemical vapor deposition of aluminum on an activated surfaceAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Dec 29, 1987·13 cites·9 claims
- 1844US2005042846A1Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal processFiled 2004·Application pending·0 cites
- 1941US2004099889A1Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrateAGERE SYSTEMS INC·Filed 2002·Application pending·0 cites
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