Inventor · disambiguated record
Kyu-Charn Park
Also filed as: PARK KYU-CHARN
39 granted patents·6 pending applications·779 citations·filing 1988–2010
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD36CHO BYUNG-KYU1CHO EUN-SUK1CHOI BYUNG-YONG1KOREA ADVANCED INST SCI & TECH1
Top patents by PatentIndex Score
45 records- 0198US6376876B1NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 23, 2002·291 cites·10 claims
- 0293US6380032B1Flash memory device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 30, 2002·63 cites·13 claims
- 0388US6624464B2Highly integrated non-volatile memory cell array having a high program speedSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 23, 2003·38 cites·8 claims
- 0488US6515329B2Flash memory device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 4, 2003·33 cites·5 claims
- 0584US7915138B2Methods of manufacturing non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 29, 2011·7 cites·17 claims
- 0684US7883929B2Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 8, 2011·12 cites·10 claims
- 0784US7230294B2Non-volatile memory devices having a multi-layered charge storage layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 12, 2007·25 cites·7 claims
- 0883US6064092ASemiconductor-on-insulator substrates containing electrically insulating mesasSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 16, 2000·53 cites·8 claims
- 0982US7679960B2Non-volatile memory device and method of operating the sameSAMSUNG ELECRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·10 cites·22 claims
- 1081US7868467B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·8 cites·17 claims
- 1180US7534684B2Methods of forming non-volatile memory devices having a multi-layered charge storage layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·6 cites·14 claims
- 1279US6936885B2NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 30, 2005·29 cites·6 claims
- 1379US6797570B2NAND-type flash memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·19 cites·12 claims
- 1477US6720579B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 13, 2004·20 cites·11 claims
- 1575US7061044B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·17 cites·10 claims
- 1675US6521941B2Non-volatile memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 18, 2003·21 cites·18 claims
- 1772US7615437B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 10, 2009·5 cites·19 claims
- 1870US8049269B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 1, 2011·4 cites·32 claims
- 1970US7508048B2Methods of fabricating a semiconductor device having multi-gate insulation layers and semiconductor devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 24, 2009·12 cites·8 claims
- 2070US6737335B2Shallow trench isolation type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 18, 2004·14 cites·3 claims
- 2169US6960500B2Semiconductor device and method of manufacturing the same including forming metal silicide gate lines and source linesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 1, 2005·13 cites·5 claims
- 2267US8076713B2Non-volatile memory devices having a multi-layered charge storage layerLEE CHANG-HYUN·Filed 2009·Granted Dec 13, 2011·2 cites·18 claims
- 2367US7602633B2Non-volatile memory device, method of manufacturing the same, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·3 cites·19 claims
- 2465US6586804B2Shallow trench isolation type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 1, 2003·10 cites·6 claims
- 2563US7344944B2Non-volatile memory device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 18, 2008·2 cites·11 claims
- 2662US6979628B2Methods of forming semiconductor devices having field oxides in trenches and devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 27, 2005·10 cites·22 claims
- 2760US7649784B2Memory cell programming methods capable of reducing coupling effectsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 19, 2010·4 cites·20 claims
- 2858US6903406B2Cells of nonvolatile memory device with high inter-layer dielectric constantSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 7, 2005·10 cites·7 claims
- 2956US6303412B1Methods of forming semiconductor-on-insulator substrates and devices and structures formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 16, 2001·5 cites·6 claims
- 3055US8809932B2Semiconductor memory device, method of fabricating the same, and devices employing the semiconductor memory deviceCHO BYUNG-KYU·Filed 2007·Granted Aug 19, 2014·1 cites·34 claims
- 3149US2008081411A1Methods of Manufacturing Non-Volatile Memory DevicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3246US2011076812A1Semiconductor device and method of manufacturing the sameLEE CHOONG-HO·Filed 2010·Application pending·0 cites
- 3345US7869255B2Non-volatile memory devices, method of manufacturing and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·0 cites·21 claims
- 3445US7449763B2Method of fabricating cell of nonvolatile memory device with floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·1 cites·10 claims
- 3545US5501995AMethod for manufacturing a gate electrode of a MOS transistorSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Mar 26, 1996·11 cites·12 claims
- 3643US2008123433A1Flash memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3741US5893745AMethods of forming semiconductor-on-insulator substratesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 13, 1999·7 cites·10 claims
- 3841US2008272423A1Conductive structures, non-volatile memory device including conductive structures and methods of manufacturing the sameCHOI BYUNG-YONG·Filed 2008·Application pending·0 cites
- 3940US7577042B2Method of programming multi-level semiconductor memory device and multi-level semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 18, 2009·0 cites·20 claims
- 4040US7122426B2Method of fabricating cell of nonvolatile memory device with floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·2 cites·9 claims
- 4139US8120091B2Non-volatile memory devices including a floating gate and methods of manufacturing the sameSUNG SUK-KANG·Filed 2008·Granted Feb 21, 2012·0 cites·19 claims
- 4238US6181014B1Integrated circuit memory devices having highly integrated SOI memory cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 30, 2001·5 cites·12 claims
- 4338US4828875AProcess for the production of sintered films of Cd1-x Znx SKOREA ADVANCED INST SCI & TECH·Filed 1988·Granted May 9, 1989·6 cites·4 claims
- 4438US2004241956A1Methods of forming trench isolation regions using chemical mechanical polishing and etchingFiled 2004·Application pending·0 cites
- 4537US2008001209A1Non-volatile memory device and method of manufacturing the non-volatile memory deviceCHO EUN-SUK·Filed 2007·Application pending·0 cites
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