Inventor · disambiguated record
Husam Alshareef
Also filed as: ALSHAREEF HUSAM · ALSHAREEF HUSAM N · ALSHAREEF HUSAM NIMAN
45 granted patents·22 pending applications·215 citations·filing 2002–2024
97Inventor score
Files withTEXAS INSTRUMENTS INC32UNIV KING ABDULLAH SCI & TECH16SAUDI BASIC IND CORP5SABIC GLOBAL TECHNOLOGIES BV3BEVAN MALCOLM J2
Top patents by PatentIndex Score
67 records- 0194US7332433B2Methods of modulating the work functions of film layersSEMATECH INC·Filed 2005·Granted Feb 19, 2008·31 cites·10 claims
- 0293US6730566B2Method for non-thermally nitrided gate formation for high voltage devicesTEXAS INSTRUMENTS INC·Filed 2002·Granted May 4, 2004·74 cites·20 claims
- 0391US11031620B1Osmotic energy conversion with MXene lamellar membrane-based system and methodUNIV KING ABDULLAH SCI & TECH·Filed 2019·Granted Jun 8, 2021·5 cites·20 claims
- 0489US9177806B2System and method for mitigating oxide growth in a gate dielectricBEVAN MALCOLM J·Filed 2011·Granted Nov 3, 2015·6 cites·12 claims
- 0587US9543322B2Methods for producing a thin film ferroelectric device using a two-step temperature process on an organic polymeric ferroelectric precursor material stacked between two conductive materialsSABIC GLOBAL TECHNOLOGIES BV·Filed 2015·Granted Jan 10, 2017·6 cites·21 claims
- 0687US7906441B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 15, 2011·6 cites·20 claims
- 0780US10068630B2Non-volatile ferroelectric memory cells with multilevel operationSABIC GLOBAL TECHNOLOGIES BV·Filed 2015·Granted Sep 4, 2018·6 cites·11 claims
- 0878US9305706B2Fractional order capacitorSAUDI BASIC IND CORP·Filed 2014·Granted Apr 5, 2016·3 cites·21 claims
- 0978US7858459B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2007·Granted Dec 28, 2010·5 cites·4 claims
- 1075US7807522B2Lanthanide series metal implant to control work function of metal gate electrodesTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 5, 2010·6 cites·12 claims
- 1175US7582521B2Dual metal gates for mugfet deviceTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 1, 2009·6 cites·18 claims
- 1272US9976913B2Thermal history devices, systems for thermal history detection, and methods for thermal history detectionUNIV KING ABDULLAH SCI & TECH·Filed 2014·Granted May 22, 2018·3 cites·20 claims
- 1372US7226826B2Semiconductor device having multiple work functions and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·14 cites·12 claims
- 1469US8878341B2Graphene-based composite materials, method of manufacture and applications thereofSAUDI BASIC IND CORP·Filed 2013·Granted Nov 4, 2014·1 cites·20 claims
- 1569US8304333B2Method of forming a high-k gate dielectric layerRAMIN MANFRED·Filed 2010·Granted Nov 6, 2012·2 cites·11 claims
- 1667US10068771B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2018·Granted Sep 4, 2018·0 cites·19 claims
- 1767US7339240B2Dual-gate integrated circuit semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 4, 2008·2 cites·4 claims
- 1866US6921703B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 26, 2005·10 cites·7 claims
- 1965US11617558B2Multimodal strain sensor and methodUNIV KING ABDULLAH SCI & TECH·Filed 2018·Granted Apr 4, 2023·0 cites·24 claims
- 2065US9892927B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Feb 13, 2018·0 cites·30 claims
- 2165US2025293305A1Polyvalent metal ion-containing electrolyte for rechargeable batterySAUDI ARABIAN OIL CO·Filed 2024·Application pending·0 cites
- 2264US12505962B2Conductive two-dimensional (2D) covalent organic frameworks (COFS) and method of making an electrode materialUNIV KING ABDULLAH SCI & TECH·Filed 2021·Granted Dec 23, 2025·0 cites·19 claims
- 2364US9779946B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2017·Granted Oct 3, 2017·0 cites·23 claims
- 2464US2022397822A1Lignin based laser lithography process for fabricating 3d graphene electrode and methodUNIV KING ABDULLAH SCI & TECH·Filed 2022·Application pending·0 cites
- 2563US9576804B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 21, 2017·0 cites·20 claims
- 2663US7799669B2Method of forming a high-k gate dielectric layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 21, 2010·1 cites·23 claims
- 2763US7514308B2CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layersTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 7, 2009·2 cites·8 claims
- 2862US9337046B1System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2016·Granted May 10, 2016·0 cites·23 claims
- 2961US9396951B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2015·Granted Jul 19, 2016·0 cites·30 claims
- 3061US9368355B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2015·Granted Jun 14, 2016·0 cites·30 claims
- 3161US9337044B2System and method for mitigating oxide growth in a gate dielectricTEXAS INSTRUMENTS INC·Filed 2015·Granted May 10, 2016·0 cites·30 claims
- 3260US11448959B2Lignin based laser lithography process for fabricating 3D graphene electrode and methodUNIV KING ABDULLAH SCI & TECH·Filed 2019·Granted Sep 20, 2022·0 cites·12 claims
- 3360US10903019B2Compositions and methods of making metal-organic frameworks with redox-active centersUNIV KING ABDULLAH SCI & TECH·Filed 2017·Granted Jan 26, 2021·0 cites·13 claims
- 3460US7049242B2Post high voltage gate dielectric pattern plasma surface treatmentTEXAS INSTRUMENTS INC·Filed 2004·Granted May 23, 2006·6 cites·21 claims
- 3560US7018925B2Post high voltage gate oxide pattern high-vacuum outgas surface treatmentTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 28, 2006·6 cites·11 claims
- 3659US2021151262A1Compositions and methods of making metal-organic frameworks with redox-active centersUNIV KING ABDULLAH SCI & TECH·Filed 2021·Application pending·0 cites
- 3757US7227201B2CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layersTEXAS INSTRUMENTS INC·Filed 2004·Granted Jun 5, 2007·6 cites·7 claims
- 3855US8994014B2Ferroelectric devices, interconnects, and methods of manufacture thereofSAUDI BASIC IND CORP·Filed 2013·Granted Mar 31, 2015·0 cites·31 claims
- 3955US2014315377A1Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 4054US8802519B2Work function adjustment with the implant of lanthanidesTEXAS INSTRUMENTS INC·Filed 2013·Granted Aug 12, 2014·0 cites·3 claims
- 4153US2008116542A1Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufacture ThereforTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 4252US2023039527A1Cathode and electrolyte chemistry for scalable zinc ion batteryUNIV KING ABDULLAH SCI & TECH·Filed 2021·Application pending·0 cites
- 4351US10096352B2Ferroelectric capacitor with improved fatigue and breakdown propertiesSAUDI BASIC IND CORP·Filed 2014·Granted Oct 9, 2018·1 cites·30 claims
- 4451US7345001B2Gate dielectric having a flat nitrogen profile and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 18, 2008·2 cites·13 claims
- 4550US7402524B2Post high voltage gate oxide pattern high-vacuum outgas surface treatmentTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 22, 2008·0 cites·11 claims
- 4649US7682988B2Thermal treatment of nitrided oxide to improve negative bias thermal instabilityTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 23, 2010·2 cites·21 claims
- 4749US6924239B2Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidationTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 2, 2005·2 cites·21 claims
- 4848US8409943B2Work function adjustment with the implant of lanthanidesRAMIN MANFRED·Filed 2010·Granted Apr 2, 2013·0 cites·14 claims
- 4948US2007284676A1Semiconductor Device Having Multiple Work Functions and Method of Manufacture ThereforTEXAS INSTRUMENTS INC·Filed 2007·Application pending·0 cites
- 5045US2022387970A1MXene-DERIVED METAL-ORGANIC FRAMEWORKS AND METHODUNIV KING ABDULLAH SCI & TECH·Filed 2020·Application pending·0 cites
Showing the top 50 of 67 patent records by PatentIndex Score.
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