Inventor · disambiguated record
Ashok Sinha
Also filed as: CHEUNG ROBIN · SINHA ASHOK · SINHA ASHOK K · SINHA ASHOK KUMAR
90 granted patents·21 pending applications·10,526 citations·filing 1974–2016
99Inventor score
Files withAPPLIED MATERIALS INC71BELL TELEPHONE LABOR INC13SUNPREME LTD5AT & T BELL LAB3SINHA ASHOK3
Top patents by PatentIndex Score
111 records- 0199US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0299US6129044AApparatus for substrate processing with improved throughput and yieldAPPLIED MATERIALS INC·Filed 1999·Granted Oct 10, 2000·578 cites·21 claims
- 0399US5846332AThermally floating pedestal collar in a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1996·Granted Dec 8, 1998·863 cites·22 claims
- 0499US5516367AChemical vapor deposition chamber with a purge guideAPPLIED MATERIALS INC·Filed 1994·Granted May 14, 1996·397 cites·47 claims
- 0598US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0698US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 0798US6277249B1Integrated process for copper via filling using a magnetron and target producing highly energetic ionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 21, 2001·273 cites·27 claims
- 0898US6274008B1Integrated process for copper via fillingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 14, 2001·231 cites·19 claims
- 0998US6258220B1Electro-chemical deposition systemAPPLIED MATERIALS INC·Filed 1999·Granted Jul 10, 2001·443 cites·26 claims
- 1098US6258223B1In-situ electroless copper seed layer enhancement in an electroplating systemAPPLIED MATERIALS INC·Filed 1999·Granted Jul 10, 2001·399 cites·9 claims
- 1198US6189482B1High temperature, high flow rate chemical vapor deposition apparatus and related methodsAPPLIED MATERIALS INC·Filed 1997·Granted Feb 20, 2001·447 cites·38 claims
- 1298US6136163AApparatus for electro-chemical deposition with thermal anneal chamberAPPLIED MATERIALS INC·Filed 1999·Granted Oct 24, 2000·569 cites·14 claims
- 1398US5856240AChemical vapor deposition of a thin film onto a substrateAPPLIED MATERIALS INC·Filed 1994·Granted Jan 5, 1999·275 cites·18 claims
- 1498US5855681AUltra high throughput wafer vacuum processing systemAPPLIED MATERIALS INC·Filed 1996·Granted Jan 5, 1999·1.1k cites·50 claims
- 1597US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 1697US7465665B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·43 cites·20 claims
- 1797US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 1897US6451177B1Vault shaped target and magnetron operable in two sputtering modesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·103 cites·26 claims
- 1997US6176667B1Multideck wafer processing systemAPPLIED MATERIALS INC·Filed 1996·Granted Jan 23, 2001·333 cites·44 claims
- 2097US6170428B1Symmetric tunable inductively coupled HDP-CVD reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jan 9, 2001·430 cites·26 claims
- 2196US7709385B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted May 4, 2010·33 cites·20 claims
- 2296US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 2396US7220673B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2006·Granted May 22, 2007·29 cites·38 claims
- 2496US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 2596US6890850B2Method of depositing dielectric materials in damascene applicationsAPPLIED MATERIALS INC·Filed 2002·Granted May 10, 2005·92 cites·27 claims
- 2696US6503375B1Electroplating apparatus using a perforated phosphorus doped consumable anodeAPPLIED MATERIALS INC·Filed 2000·Granted Jan 7, 2003·93 cites·7 claims
- 2796US6436267B1Method for achieving copper fill of high aspect ratio interconnect featuresAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·105 cites·35 claims
- 2896US5964947ARemovable pumping channel liners within a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·96 cites·20 claims
- 2996US4378628ACobalt silicide metallization for semiconductor integrated circuitsBELL TELEPHONE LABOR INC·Filed 1981·Granted Apr 5, 1983·105 cites·22 claims
- 3095US4851370AFabricating a semiconductor device with low defect density oxideAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted Jul 25, 1989·319 cites·9 claims
- 3194US7101795B1Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layerAPPLIED MATERIALS INC·Filed 2000·Granted Sep 5, 2006·50 cites·14 claims
- 3294US6991709B2Multi-step magnetron sputtering processAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·46 cites·24 claims
- 3394US6829056B1Monitoring dimensions of features at different locations in the processing of substratesFiled 2003·Granted Dec 7, 2004·107 cites·19 claims
- 3494US6787006B2Operating a magnetron sputter reactor in two modesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 7, 2004·53 cites·31 claims
- 3594US4142004AMethod of coating semiconductor substratesBELL TELEPHONE LABOR INC·Filed 1976·Granted Feb 27, 1979·127 cites·1 claims
- 3693US6109206ARemote plasma source for chamber cleaningAPPLIED MATERIALS INC·Filed 1997·Granted Aug 29, 2000·138 cites·19 claims
- 3792US7384867B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jun 10, 2008·16 cites·48 claims
- 3892US6905737B2Method of delivering activated species for rapid cyclical depositionAPPLIED MATERIALS INC·Filed 2002·Granted Jun 14, 2005·47 cites·17 claims
- 3992US6485618B2Integrated copper fill processAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·47 cites·26 claims
- 4092US5695568AChemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1994·Granted Dec 9, 1997·95 cites·22 claims
- 4191US7033922B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2004·Granted Apr 25, 2006·30 cites·26 claims
- 4291US6849545B2System and method to form a composite film stack utilizing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Feb 1, 2005·54 cites·49 claims
- 4391US6635157B2Electro-chemical deposition systemAPPLIED MATERIALS INC·Filed 2001·Granted Oct 21, 2003·43 cites·68 claims
- 4491US4276557AIntegrated semiconductor circuit structure and method for making itBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 30, 1981·59 cites·7 claims
- 4590US7951640B2Low-cost multi-junction solar cells and methods for their productionSUNPREME LTD·Filed 2009·Granted May 31, 2011·13 cites·10 claims
- 4689US7276447B1Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant materialAPPLIED MATERIALS INC·Filed 2006·Granted Oct 2, 2007·24 cites·18 claims
- 4789US6103014AChemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1996·Granted Aug 15, 2000·62 cites·15 claims
- 4889US5935338AChemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1996·Granted Aug 10, 1999·63 cites·11 claims
- 4989US4151007AHydrogen annealing process for stabilizing metal-oxide-semiconductor structuresBELL TELEPHONE LABOR INC·Filed 1977·Granted Apr 24, 1979·51 cites·11 claims
- 5088US7151053B2Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applicationsAPPLIED MATERIALS INC·Filed 2005·Granted Dec 19, 2006·8 cites·23 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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