Inventor · disambiguated record
Alfred Mak
Also filed as: MAK ALFRED · MAK ALFRED W · MAK ALFRED W S
61 granted patents·17 pending applications·5,748 citations·filing 1991–2014
99Inventor score
Top patents by PatentIndex Score
78 records- 0199US7208413B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2004·Granted Apr 24, 2007·536 cites·28 claims
- 0299US6831004B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2003·Granted Dec 14, 2004·533 cites·34 claims
- 0399US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0498US7501343B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 10, 2009·47 cites·22 claims
- 0598US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0698US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 0798US6620723B1Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 16, 2003·204 cites·4 claims
- 0898US6171661B1Deposition of copper with increased adhesionAPPLIED MATERIALS INC·Filed 1998·Granted Jan 9, 2001·362 cites·26 claims
- 0997US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 1097US7501344B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 10, 2009·44 cites·21 claims
- 1197US7465665B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·43 cites·20 claims
- 1297US7211144B2Pulsed nucleation deposition of tungsten layersAPPLIED MATERIALS INC·Filed 2002·Granted May 1, 2007·161 cites·25 claims
- 1397US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 1497US6866746B2Clamshell and small volume chamber with fixed substrate supportAPPLIED MATERIALS INC·Filed 2002·Granted Mar 15, 2005·130 cites·27 claims
- 1596US7846840B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2009·Granted Dec 7, 2010·19 cites·22 claims
- 1696US7709385B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted May 4, 2010·33 cites·20 claims
- 1796US7695563B2Pulsed deposition process for tungsten nucleationAPPLIED MATERIALS INC·Filed 2007·Granted Apr 13, 2010·38 cites·30 claims
- 1896US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 1996US7220673B2Method for depositing tungsten-containing layers by vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2006·Granted May 22, 2007·29 cites·38 claims
- 2096US7128806B2Mask etch processing apparatusAPPLIED MATERIALS INC·Filed 2003·Granted Oct 31, 2006·131 cites·34 claims
- 2196US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 2296US6402806B1Method for unreacted precursor conversion and effluent removalAPPLIED MATERIALS INC·Filed 2000·Granted Jun 11, 2002·436 cites·34 claims
- 2395US7175713B2Apparatus for cyclical deposition of thin filmsAPPLIED MATERIALS INC·Filed 2003·Granted Feb 13, 2007·110 cites·11 claims
- 2495US6855368B1Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2000·Granted Feb 15, 2005·58 cites·15 claims
- 2595US6206967B1Low resistivity W using B2H6 nucleation stepAPPLIED MATERIALS INC·Filed 2000·Granted Mar 27, 2001·311 cites·32 claims
- 2695US6099649AChemical vapor deposition hot-trap for unreacted precursor conversion and effluent removalAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·480 cites·18 claims
- 2794US7101795B1Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layerAPPLIED MATERIALS INC·Filed 2000·Granted Sep 5, 2006·50 cites·14 claims
- 2894US7085616B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2001·Granted Aug 1, 2006·42 cites·39 claims
- 2994US6251190B1Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitrideAPPLIED MATERIALS INC·Filed 2000·Granted Jun 26, 2001·84 cites·18 claims
- 3093US6162715AMethod of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitrideAPPLIED MATERIALS INC·Filed 1998·Granted Dec 19, 2000·136 cites·34 claims
- 3193US6099904ALow resistivity W using B2 H6 nucleation stepAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·217 cites·33 claims
- 3292US8027746B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2010·Granted Sep 27, 2011·4 cites·15 claims
- 3392US7384867B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jun 10, 2008·16 cites·48 claims
- 3492US6309713B1Deposition of tungsten nitride by plasma enhanced chemical vapor depositionAPPLIED MATERIALS INC·Filed 1997·Granted Oct 30, 2001·89 cites·16 claims
- 3591US7250309B2Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process controlAPPLIED MATERIALS INC·Filed 2004·Granted Jul 31, 2007·39 cites·19 claims
- 3691US7033922B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2004·Granted Apr 25, 2006·30 cites·26 claims
- 3791US6849545B2System and method to form a composite film stack utilizing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Feb 1, 2005·54 cites·49 claims
- 3890US7897525B2Methods and systems of transferring, docking and processing substratesARCHERS INC·Filed 2008·Granted Mar 1, 2011·21 cites·62 claims
- 3990US5740009AApparatus for improving wafer and chuck edge protectionAPPLIED MATERIALS INC·Filed 1996·Granted Apr 14, 1998·117 cites·24 claims
- 4089US8367565B2Methods and systems of transferring, docking and processing substratesARCHERS INC·Filed 2010·Granted Feb 5, 2013·16 cites·52 claims
- 4189US7860597B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2009·Granted Dec 28, 2010·5 cites·19 claims
- 4288US8626330B2Atomic layer deposition apparatusCHIN BARRY L·Filed 2011·Granted Jan 7, 2014·4 cites·14 claims
- 4386US7660644B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Feb 9, 2010·4 cites·10 claims
- 4484US9031685B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2014·Granted May 12, 2015·1 cites·19 claims
- 4584US8268734B2Methods and systems of transferring, docking and processing substratesLEI LAWRENCE CHUNG-LAI·Filed 2011·Granted Sep 18, 2012·7 cites·34 claims
- 4682US5883778AElectrostatic chuck with fluid flow regulatorAPPLIED MATERIALS INC·Filed 1995·Granted Mar 16, 1999·68 cites·25 claims
- 4781US8110511B2Methods and systems of transferring a substrate to minimize heat lossLEI LAWRENCE CHUNG-LAI·Filed 2009·Granted Feb 7, 2012·9 cites·26 claims
- 4880US6020270ABomine and iodine etch process for silicon and silicidesAPPLIED MATERIALS INC·Filed 1998·Granted Feb 1, 2000·47 cites·10 claims
- 4977US6355106B1Deposition of copper with increased adhesionAPPLIED MATERIALS INC·Filed 2000·Granted Mar 12, 2002·13 cites·24 claims
- 5076US5673922AApparatus for centering substrates on support membersAPPLIED MATERIALS INC·Filed 1995·Granted Oct 7, 1997·52 cites·42 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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