Inventor · disambiguated record
Yoshishige Matsumoto
Also filed as: MATSUMOTO YOSHISHIGE
7 granted patents·1 pending application·482 citations·filing 1981–2003
88Inventor score
Top patents by PatentIndex Score
8 records- 0196US6252261B1GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process thereforNEC CORP·Filed 1999·Granted Jun 26, 2001·319 cites·61 claims
- 0287US5866920ASemiconductor device and manufacturing method of the sameNEC CORP·Filed 1997·Granted Feb 2, 1999·78 cites·16 claims
- 0382US6091081AInsulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating filmNEC CORP·Filed 1997·Granted Jul 18, 2000·55 cites·13 claims
- 0469US6372628B1Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·11 cites·3 claims
- 0545US6180531B1Semiconductor manufacturing methodNEC CORP·Filed 1999·Granted Jan 30, 2001·10 cites·15 claims
- 0638US2003207125A1Base substrate for crystal growth and manufacturing method of substrate by using the sameNEC CORP·Filed 2003·Application pending·0 cites
- 0737US4434491ASemiconductor laserNIPPON ELECTRIC CO·Filed 1981·Granted Feb 28, 1984·5 cites·8 claims
- 0831US4689646ADepletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the sameNEC CORP·Filed 1985·Granted Aug 25, 1987·4 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →