Inventor · disambiguated record
Volker Dudek
Also filed as: DUDEK VOLKER
48 granted patents·10 pending applications·419 citations·filing 1992–2022
98Inventor score
Files withATMEL GERMANY GMBH193 5 POWER ELECTRONICS GMBH16ATMEL CORP10TELEFUNKEN SEMICONDUCTORS GMBH & CO KG3AZUR SPACE SOLAR POWER GMBH2
Top patents by PatentIndex Score
58 records- 0197US7001804B2Method of producing active semiconductor layers of different thicknesses in an SOI waferATMEL GERMANY GMBH·Filed 2005·Granted Feb 21, 2006·100 cites·21 claims
- 0294US10340394B2III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2018·Granted Jul 2, 2019·8 cites·13 claims
- 0393US10263124B2III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2017·Granted Apr 16, 2019·8 cites·14 claims
- 0493US10074540B2III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2017·Granted Sep 11, 2018·8 cites·14 claims
- 0593US7348256B2Methods of forming reduced electric field DMOS using self-aligned trench isolationATMEL CORP·Filed 2005·Granted Mar 25, 2008·20 cites·21 claims
- 0692US10312381B2III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2018·Granted Jun 4, 2019·7 cites·14 claims
- 0792US10192745B2Method for manufacturing a layer stack from a p+-substrate, a p−-layer, an n−-layer and a third layer3 5 POWER ELECTRONICS GMBH·Filed 2017·Granted Jan 29, 2019·7 cites·8 claims
- 0889US7064385B2DMOS-transistor with lateral dopant gradient in drift region and method of producing the sameATMEL GERMANY GMBH·Filed 2004·Granted Jun 20, 2006·46 cites·30 claims
- 0988US7402846B2Electrostatic discharge (ESD) protection structure and a circuit using the sameATMEL CORP·Filed 2005·Granted Jul 22, 2008·17 cites·9 claims
- 1087US11257909B2Stacked, high-blocking InGaAs semiconductor power diodeAZUR SPACE SOLAR POWER GMBH·Filed 2020·Granted Feb 22, 2022·2 cites·12 claims
- 1186US10734532B2III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2019·Granted Aug 4, 2020·3 cites·15 claims
- 1285US7078324B2Method of fabricating a semiconductor component with active regions separated by isolation trenchesATMEL GERMANY GMBH·Filed 2004·Granted Jul 18, 2006·41 cites·27 claims
- 1383US10854760B2Stacked III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2019·Granted Dec 1, 2020·3 cites·16 claims
- 1481US8378414B2Low leakage FINFETsATMEL CORP·Filed 2011·Granted Feb 19, 2013·5 cites·13 claims
- 1580US7233044B2MOS transistor and method for producing a MOS transistor structureATMEL GERMANY GMBH·Filed 2005·Granted Jun 19, 2007·7 cites·8 claims
- 1678US7504692B2High-voltage field-effect transistorATMEL GERMANY GMBH·Filed 2006·Granted Mar 17, 2009·6 cites·14 claims
- 1778US6878603B2Process for manufacturing a DMOS transistorATMEL GERMANY GMBH·Filed 2002·Granted Apr 12, 2005·24 cites·51 claims
- 1874US7560334B2Method and system for incorporating high voltage devices in an EEPROMATMEL CORP·Filed 2005·Granted Jul 14, 2009·5 cites·25 claims
- 1972US10784381B2Stacked III-V semiconductor component3 5 POWER ELECTRONICS GMBH·Filed 2019·Granted Sep 22, 2020·1 cites·9 claims
- 2072US7973333B2Lateral DMOS transistor and method for the production thereofTELEFUNKEN SEMICONDUCTORS GMBH & CO KG·Filed 2007·Granted Jul 5, 2011·6 cites·11 claims
- 2170US10276730B2Stacked Schottky diode3 5 POWER ELECTRONICS GMBH·Filed 2017·Granted Apr 30, 2019·1 cites·17 claims
- 2270US6933215B2Process for doping a semiconductor bodyATMEL GERMANY GMBH·Filed 2002·Granted Aug 23, 2005·14 cites·33 claims
- 2370US6806131B2Process for manufacturing a DMOS transistorATMEL GERMANY GMBH·Filed 2002·Granted Oct 19, 2004·15 cites·48 claims
- 2470US6780713B2Process for manufacturing a DMOS transistorATMEL GERMANY GMBH·Filed 2002·Granted Aug 24, 2004·14 cites·49 claims
- 2569US7816758B2Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the sameATMEL AUTOMOTIVE GMBH·Filed 2006·Granted Oct 19, 2010·4 cites·3 claims
- 2669US7407851B2DMOS device with sealed channel processingMILLER GAYLE W·Filed 2006·Granted Aug 5, 2008·4 cites·30 claims
- 2767US11699722B2Stacked, high-blocking InGaAs semiconductor power diodeAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Jul 11, 2023·0 cites·13 claims
- 2859US6716721B2Method for manufacturing a silicon waferATMEL GERMANY GMBH·Filed 2002·Granted Apr 6, 2004·10 cites·20 claims
- 2958US7539965B2Circuit layout with active components and high breakdown voltageATMEL GERMANY GMBH·Filed 2005·Granted May 26, 2009·3 cites·6 claims
- 3056US7851326B2Method for producing deep trench structuresTELEFUNKEN SEMICONDUCTORS GMBH & CO KG·Filed 2007·Granted Dec 14, 2010·1 cites·13 claims
- 3154US6720238B2Method for manufacturing buried areasATMEL GERMANY GMBH·Filed 2002·Granted Apr 13, 2004·7 cites·23 claims
- 3253US11784261B2Stacked III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2022·Granted Oct 10, 2023·0 cites·18 claims
- 3352US2007207589A1Registration mark within an overlap of dopant regionsATMEL CORP·Filed 2007·Application pending·0 cites
- 3452US2008290426A1Dmos device with sealed channel processingATMEL CORP·Filed 2008·Application pending·0 cites
- 3551US7230342B2Registration mark within an overlap of dopant regionsATMEL CORP·Filed 2005·Granted Jun 12, 2007·0 cites·5 claims
- 3650US11791423B2Stacked III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2022·Granted Oct 17, 2023·0 cites·13 claims
- 3750US10847626B2Stacked III-V semiconductor component3 5 POWER ELECTRONICS GMBH·Filed 2018·Granted Nov 24, 2020·0 cites·15 claims
- 3850US7848070B2Electrostatic discharge (ESD) protection structure and a circuit using the sameATMEL CORP·Filed 2008·Granted Dec 7, 2010·0 cites·20 claims
- 3950US2008135933A1Reduced electric field dmos using self-aligned trench isolationATMEL CORP·Filed 2008·Application pending·0 cites
- 4050US2008173940A1Reduced electric field dmos using self-aligned trench isolationATMEL CORP·Filed 2008·Application pending·0 cites
- 4149US11769839B2Stacked III-V semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2022·Granted Sep 26, 2023·0 cites·15 claims
- 4249US11271117B2Stacked high-blocking III-V power semiconductor diode3 5 POWER ELECTRONICS GMBH·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 4349US7144796B2Method of fabricating semiconductor components through implantation and diffusion in a semiconductor substrateATMEL GERMANY GMBH·Filed 2004·Granted Dec 5, 2006·2 cites·25 claims
- 4448US7601568B2MOS transistor and method for producing a MOS transistor structureATMEL GERMANY GMBH·Filed 2007·Granted Oct 13, 2009·0 cites·14 claims
- 4546US10825734B2Method for fabricating a semiconductor device and a semiconductor device3 5 POWER ELECTRONICS GMBH·Filed 2019·Granted Nov 3, 2020·0 cites·19 claims
- 4646US5635753AIntegrated circuitHOEFFLINGER BERND·Filed 1992·Granted Jun 3, 1997·14 cites·23 claims
- 4746US2009160009A1Semiconductor array and method for manufacturing a semiconductor arrayATMEL GERMANY GMBH·Filed 2006·Application pending·0 cites
- 4845US8093640B2Method and system for incorporating high voltage devices in an EEPROMSCHWANTES STEFAN·Filed 2009·Granted Jan 10, 2012·0 cites·21 claims
- 4945US6764923B2Method for manufacturing components of an SOI waferATMEL GERMANY GMBH·Filed 2002·Granted Jul 20, 2004·3 cites·41 claims
- 5040US2007228425A1Method and manufacturing low leakage MOSFETs and FinFETsMILLER GAYLE W·Filed 2006·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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