Inventor · disambiguated record
Chengwen Pei
Also filed as: PEI CHENGWEN
145 granted patents·14 pending applications·628 citations·filing 2007–2019
99Inventor score
Top patents by PatentIndex Score
159 records- 0198US9437496B1Merged source drain epitaxyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·26 cites·20 claims
- 0298US9391204B1Asymmetric FETIBM·Filed 2015·Granted Jul 12, 2016·33 cites·10 claims
- 0397US8420476B2Integrated circuit with finFETs and MIM fin capacitorBOOTH JR ROGER A·Filed 2010·Granted Apr 16, 2013·32 cites·27 claims
- 0496US9666582B1On-chip finFET structures to implement physical unclonable function for security applicationGLOBALFOUNDRIES INC·Filed 2016·Granted May 30, 2017·18 cites·17 claims
- 0596US8395217B1Isolation in CMOSFET devices utilizing buried air bagsCHENG KANGGUO·Filed 2011·Granted Mar 12, 2013·33 cites·18 claims
- 0695US8927378B2Trench silicide contact with low interface resistanceIBM·Filed 2013·Granted Jan 6, 2015·17 cites·20 claims
- 0795US7671394B2Embedded trench capacitor having a high-k node dielectric and a metallic inner electrodeIBM·Filed 2007·Granted Mar 2, 2010·30 cites·20 claims
- 0894US9391030B1On-chip semiconductor device having enhanced variabilityIBM·Filed 2015·Granted Jul 12, 2016·9 cites·10 claims
- 0994US8354675B2Enhanced capacitance deep trench capacitor for EDRAMIBM·Filed 2010·Granted Jan 15, 2013·20 cites·25 claims
- 1093US9576914B2Inducing device variation for security applicationsGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 21, 2017·10 cites·10 claims
- 1192US9634084B1Conformal buffer layer in source and drain regions of fin-type transistorsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 1292US8853781B2Rare-earth oxide isolated semiconductor finCHENG KANGGUO·Filed 2011·Granted Oct 7, 2014·10 cites·20 claims
- 1392US8841174B1Silicon controlled rectifier with integral deep trench capacitorIBM·Filed 2013·Granted Sep 23, 2014·12 cites·8 claims
- 1492US7759766B2Electrical fuse having a thin fuselinkIBM·Filed 2007·Granted Jul 20, 2010·24 cites·20 claims
- 1590US9870942B1Method of forming mandrel and non-mandrel metal lines having variable widthsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 16, 2018·7 cites·20 claims
- 1690US9595518B1Fin-type metal-semiconductor resistors and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 14, 2017·10 cites·15 claims
- 1790US8962423B2Multilayer MIM capacitorCHENG KANGGUO·Filed 2012·Granted Feb 24, 2015·8 cites·11 claims
- 1890US8685817B1Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2012·Granted Apr 1, 2014·10 cites·11 claims
- 1990US8470684B2Suppression of diffusion in epitaxial buried plate for deep trenchesPEI CHENGWEN·Filed 2011·Granted Jun 25, 2013·10 cites·20 claims
- 2090US8236632B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2010·Granted Aug 7, 2012·10 cites·24 claims
- 2190US7875919B2Shallow trench capacitor compatible with high-K / metal gateIBM·Filed 2008·Granted Jan 25, 2011·18 cites·7 claims
- 2289US9852982B1Anti-fuses with reduced programming voltagesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 26, 2017·5 cites·8 claims
- 2389US9048339B2Deep trench capacitorCHENG KANGGUO·Filed 2012·Granted Jun 2, 2015·9 cites·14 claims
- 2488US9478600B2Method of forming substrate contact for semiconductor on insulator (SOI) substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 25, 2016·6 cites·19 claims
- 2588US9397152B2Multilayer MIM capacitorIBM·Filed 2015·Granted Jul 19, 2016·4 cites·14 claims
- 2688US9240406B2Precision trench capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 19, 2016·9 cites·20 claims
- 2788US8815669B2Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2013·Granted Aug 26, 2014·8 cites·5 claims
- 2887US9583497B2Metal trench capacitor and improved isolation and methods of manufactureIBM·Filed 2016·Granted Feb 28, 2017·3 cites·14 claims
- 2987US9287272B2Metal trench capacitor and improved isolation and methods of manufactureIBM·Filed 2014·Granted Mar 15, 2016·5 cites·14 claims
- 3087US9189654B2On-chip structure for security applicationIBM·Filed 2013·Granted Nov 17, 2015·9 cites·17 claims
- 3187US9093453B2High performance e-fuse fabricated with sub-lithographic dimensionIBM·Filed 2013·Granted Jul 28, 2015·8 cites·14 claims
- 3287US8927432B2Continuously scalable width and height semiconductor finsGUO DECHAO·Filed 2012·Granted Jan 6, 2015·8 cites·9 claims
- 3386US9006783B2Silicon controlled rectifier with integral deep trench capacitorIBM·Filed 2014·Granted Apr 14, 2015·6 cites·8 claims
- 3485US9806084B1Anti-fuse with reduced programming voltageIBM·Filed 2016·Granted Oct 31, 2017·3 cites·14 claims
- 3585US9136321B1Low energy ion implantation of a junction butting regionIBM·Filed 2014·Granted Sep 15, 2015·6 cites·12 claims
- 3685US9076817B2Epitaxial extension CMOS transistorPEI CHENGWEN·Filed 2011·Granted Jul 7, 2015·7 cites·14 claims
- 3785US8846470B2Metal trench capacitor and improved isolation and methods of manufactureBOOTH JR ROGER A·Filed 2011·Granted Sep 30, 2014·5 cites·20 claims
- 3885US8809953B2FET structures with trench implantation to improve back channel leakage and body resistanceFRIED DAVID M·Filed 2012·Granted Aug 19, 2014·6 cites·20 claims
- 3984US9228994B1Nanochannel electrode devicesGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 5, 2016·3 cites·10 claims
- 4084US9093466B2Epitaxial extension CMOS transistorIBM·Filed 2013·Granted Jul 28, 2015·6 cites·20 claims
- 4183US9972621B1Fin structure in sublitho dimension for high performance CMOS applicationGLOBALFOUNDRIES INC·Filed 2017·Granted May 15, 2018·4 cites·19 claims
- 4283US9058987B2Rare-earth oxide isolated semiconductor finIBM·Filed 2014·Granted Jun 16, 2015·4 cites·17 claims
- 4383US9054126B2Recessed single crystalline source and drain for semiconductor-on-insulator devicesIBM·Filed 2013·Granted Jun 9, 2015·5 cites·15 claims
- 4483US8723243B2Polysilicon/metal contact resistance in deep trenchIBM·Filed 2013·Granted May 13, 2014·5 cites·16 claims
- 4583US8569810B2Metal semiconductor alloy contact with low resistanceYU JIAN·Filed 2010·Granted Oct 29, 2013·6 cites·9 claims
- 4683US8492811B2Self-aligned strap for embedded capacitor and replacement gate devicesBOOTH JR ROGER A·Filed 2010·Granted Jul 23, 2013·6 cites·20 claims
- 4782US9431339B2Wiring structure for trench fuse component with methods of fabricationIBM·Filed 2014·Granted Aug 30, 2016·5 cites·20 claims
- 4882US8637365B2Spacer isolation in deep trenchCHENG KANGGUO·Filed 2012·Granted Jan 28, 2014·5 cites·9 claims
- 4982US8409989B2Structure and method to fabricate a body contactPEI CHENGWEN·Filed 2010·Granted Apr 2, 2013·5 cites·12 claims
- 5080US8896088B2Reliable electrical fuse with localized programmingLi yan zun·Filed 2011·Granted Nov 25, 2014·4 cites·7 claims
Showing the top 50 of 159 patent records by PatentIndex Score.
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