Inventor · disambiguated record
Takanao Shimodaira
Also filed as: SHIMODAIRA TAKANAO
21 granted patents·7 pending applications·20 citations·filing 2004–2022
90Inventor score
Top patents by PatentIndex Score
28 records- 0191US8795431B2Method for producing gallium nitride layer and seed crystal substrate used in sameNGK INSULATORS LTD·Filed 2013·Granted Aug 5, 2014·7 cites·12 claims
- 0289US11309455B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Apr 19, 2022·2 cites·14 claims
- 0383US11088299B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Aug 10, 2021·1 cites·27 claims
- 0483US11011678B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted May 18, 2021·1 cites·15 claims
- 0580US10041186B2Method for producing nitride crystalNGK INSULATORS LTD·Filed 2016·Granted Aug 7, 2018·1 cites·6 claims
- 0678US11611017B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Mar 21, 2023·1 cites·14 claims
- 0776US7842133B2Single crystal growing methodNGK INSULATORS LTD·Filed 2008·Granted Nov 30, 2010·2 cites·11 claims
- 0864US8227324B2Method for producing group III nitride-based compound semiconductor crystalYAMAZAKI SHIRO·Filed 2007·Granted Jul 24, 2012·2 cites·20 claims
- 0963US9017479B2Nitride single crystal manufacturing apparatusIWAI MAKOTO·Filed 2008·Granted Apr 28, 2015·3 cites·5 claims
- 1062US8657955B2Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystalIWAI MAKOTO·Filed 2009·Granted Feb 25, 2014·0 cites·2 claims
- 1159US11555257B2Group 13 element nitride layer, free-standing substrate and functional elementNGK INSULATORS LTD·Filed 2020·Granted Jan 17, 2023·0 cites·15 claims
- 1256US2023215969A9Method for producing group 13 element nitride crystal layer, and seed crystal substrateNGK INSULATORS LTD·Filed 2022·Application pending·0 cites
- 1355US8231729B2Apparatus for producing nitride single crystalIWAI MAKOTO·Filed 2008·Granted Jul 31, 2012·0 cites·4 claims
- 1453US2014026809A1Process for Producing Group 13 Metal Nitride, and Seed Crystal Substrate for Use in SameNGK INSULATORS LTD·Filed 2013·Application pending·0 cites
- 1552US8729672B2Method for growing group 13 nitride crystal and group 13 nitride crystalNGK INSULATORS LTD·Filed 2013·Granted May 20, 2014·0 cites·1 claims
- 1651US10138570B2System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tablesNGK INSULATORS LTD·Filed 2017·Granted Nov 27, 2018·0 cites·6 claims
- 1749US11035055B2Group 13 nitride layer, composite substrate, and functional elementNGK INSULATORS LTD·Filed 2019·Granted Jun 15, 2021·0 cites·8 claims
- 1849US8999059B2Process for producing a nitride single crystal and apparatus thereforIMAI KATSUHIRO·Filed 2008·Granted Apr 7, 2015·0 cites·25 claims
- 1948US9677192B2Group 3B nitride crystal substrateSHIMODAIRA TAKANAO·Filed 2011·Granted Jun 13, 2017·0 cites·3 claims
- 2045US2009169444A1Apparatus for Producing Group III Nitride Based Compound SemiconductorYAMAZAKI SHIRO·Filed 2007·Application pending·0 cites
- 2143US8440017B2Method for growing group 13 nitride crystal and group 13 nitride crystalSHIMODAIRA TAKANAO·Filed 2011·Granted May 14, 2013·0 cites·6 claims
- 2242US9960316B2Method for separating group 13 element nitride layer, and composite substrateNGK INSULATORS LTD·Filed 2017·Granted May 1, 2018·0 cites·9 claims
- 2337US9290861B2Group 13 nitride crystal with stepped surfaceHIRAO TAKAYUKI·Filed 2010·Granted Mar 22, 2016·0 cites·4 claims
- 2437US2005196586A1Enhanced porous ceramic article and method of manufacturing the sameNGK INSULATORS LTD·Filed 2005·Application pending·0 cites
- 2536US2006175250A1Ceramic filterSHIMODAIRA TAKANAO·Filed 2004·Application pending·0 cites
- 2636US2006169633A1Ceramic filterSHIMODAIRA TAKANAO·Filed 2004·Application pending·0 cites
- 2734US2012111264A1Method for producing group iii metal nitride single crystalSHIMODAIRA TAKANAO·Filed 2012·Application pending·0 cites
- 2830US8123856B2Method and apparatus for producing group III nitride based compound semiconductorYAMAZAKI SHIRO·Filed 2007·Granted Feb 28, 2012·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →