Inventor · disambiguated record
Bailey Jones
Also filed as: JONES BAILEY · JONES BAILEY R
11 granted patents·4 pending applications·82 citations·filing 2000–2007
88Inventor score
Top patents by PatentIndex Score
15 records- 0187US7126193B2Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2003·Granted Oct 24, 2006·38 cites·14 claims
- 0263US6987052B2Method for making enhanced substrate contact for a semiconductor deviceAGERE SYSTEMS INC·Filed 2003·Granted Jan 17, 2006·12 cites·16 claims
- 0363US6790753B2Field plated schottky diode and method of fabrication thereforAGERE SYSTEMS INC·Filed 2003·Granted Sep 14, 2004·10 cites·15 claims
- 0458US7329605B2Semiconductor structure formed using a sacrificial structureAGERE SYSTEMS INC·Filed 2005·Granted Feb 12, 2008·1 cites·9 claims
- 0554US6690037B1Field plated Schottky diodeAGERE SYSTEMS INC·Filed 2000·Granted Feb 10, 2004·6 cites·16 claims
- 0652US7041561B2Enhanced substrate contact for a semiconductor deviceAGERE SYSTEMS INC·Filed 2004·Granted May 9, 2006·5 cites·19 claims
- 0751US7741702B2Semiconductor structure formed using a sacrificial structureAGERE SYSTEMS INC·Filed 2007·Granted Jun 22, 2010·0 cites·20 claims
- 0850US7339274B2Metallization performance in electronic devicesAGERE SYSTEMS INC·Filed 2004·Granted Mar 4, 2008·4 cites·27 claims
- 0949US6828649B2Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2002·Granted Dec 7, 2004·4 cites·17 claims
- 1047US7494888B2Device and method using isotopically enriched siliconAGERE SYSTEMS INC·Filed 2004·Granted Feb 24, 2009·1 cites·20 claims
- 1145US2007007593A1Metal-oxide-semiconductor device with enhanced source electrodeCICLON SEMICONDUCTOR DEVICE CO·Filed 2006·Application pending·0 cites
- 1241US6737311B2Semiconductor device having a buried layer for reducing latchup and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2001·Granted May 18, 2004·1 cites·17 claims
- 1340US2004251511A1Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2004·Application pending·0 cites
- 1437US2003211701A1Semiconductor device including an isolation trench having a dopant barrier layer formed on a sidewall thereof and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2002·Application pending·0 cites
- 1532US2003141566A1Method of simultaneously manufacturing a metal oxide semiconductor device and a bipolar deviceAGERE SYST GUARDIAN CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →