Inventor · disambiguated record
Byeng-Sun Choi
Also filed as: CHOI BYENG-SUN
14 granted patents·684 citations·filing 1996–2000
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD14
Top patents by PatentIndex Score
14 records- 0197US5677873AMethods of programming flash EEPROM integrated circuit memory devices to prevent inadvertent programming of nondesignated NAND memory cells thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 14, 1997·200 cites·20 claims
- 0291US6233717B1Multi-bit memory device having error check and correction circuit and method for checking and correcting data errors thereinSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 15, 2001·186 cites·16 claims
- 0386US6226214B1Read only memorySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 1, 2001·65 cites·10 claims
- 0483US5963475AAdvanced nonvolatile memories adaptable to dynamic random access memories and methods of operating thereinSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 5, 1999·61 cites·11 claims
- 0576US6028813ANOR type semiconductor memory device and a method for reading data stored thereinSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 22, 2000·41 cites·18 claims
- 0671US6088277ARead only memory capable of realizing a high-speed read operationSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 11, 2000·35 cites·24 claims
- 0768US6324115B1Semiconductor memory device with burst mode accessSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 27, 2001·17 cites·13 claims
- 0866US5748531ACommon source line control circuit for preventing snap back breakdownSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 5, 1998·25 cites·20 claims
- 0951US6075725AMultilevel memory devices having memory cell referenced word line voltage generators with predetermined offsetsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·13 cites·12 claims
- 1050US6137726AMulti-level memory devices having memory cell referenced word line voltage generationsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 24, 2000·12 cites·26 claims
- 1146US5949727ASemiconductor memory device with data sensing scheme regardless of bit line couplingSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 7, 1999·10 cites·23 claims
- 1242US5923586ANonvolatile memory with lockable cellsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 13, 1999·8 cites·3 claims
- 1341US6072734ARead only memory having bias circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 6, 2000·7 cites·6 claims
- 1435US6252817B1Read only memory with neighboring memory blocks sharing block selection linesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 26, 2001·4 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →