Inventor · disambiguated record
Jan Ropohl
Also filed as: ROPOHL JAN
9 granted patents·1 pending application·9 citations·filing 2005–2023
80Inventor score
Top patents by PatentIndex Score
10 records- 0176US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 0270US11728389B2Group III nitride device having an ohmic contactINFINEON TECHNOLOGIES AG·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 0369US10629727B2Method of manufacturing a semiconductor device including an LDMOS transistorINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 21, 2020·1 cites·21 claims
- 0468US7060562B2Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 13, 2006·4 cites·20 claims
- 0558US11302783B2Group III nitride device and method of fabricating an ohmic contact for a group III nitride-based deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 12, 2022·0 cites·10 claims
- 0656US2024030334A1Group iii nitride-based semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 0755US10304789B2LDMOS transistor structure and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 0852US10020270B2Semiconductor device including a LDMOS transistor, monolithic microwave integrated circuit and methodINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jul 10, 2018·0 cites·20 claims
- 0951US8044459B2Semiconductor device with trench field plate including first and second semiconductor materialsINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Oct 25, 2011·0 cites·22 claims
- 1046US10050139B2Semiconductor device including a LDMOS transistor and methodINFINEON TECHNOLOGIES AG·Filed 2016·Granted Aug 14, 2018·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →