Inventor · disambiguated record
Jang-Hyeon Seok
Also filed as: SEOK JANG HYEON
12 granted patents·9 pending applications·27 citations·filing 2008–2024
84Inventor score
Top patents by PatentIndex Score
21 records- 0193US9245740B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Jan 26, 2016·18 cites·3 claims
- 0284US9809608B2Cyclodisilazane derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Nov 7, 2017·4 cites·12 claims
- 0382US9586979B2Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the sameDNF CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·6 claims
- 0468US11414434B2Rare earth precursor, method of manufacturing same and method of forming thin film using sameHANSOL CHEMICAL CO LTD·Filed 2018·Granted Aug 16, 2022·0 cites·9 claims
- 0565US10202407B2Trisilyl amine derivative, method for preparing the same and silicon-containing thin film using the sameDNF CO LTD·Filed 2015·Granted Feb 12, 2019·1 cites·12 claims
- 0665US9916974B2Amino-silyl amine compound and the manufacturing method of dielectric film containing Si—N bond by using atomic layer depositionDNF CO LTD·Filed 2015·Granted Mar 13, 2018·1 cites·16 claims
- 0764US11401290B2Cobalt precursor, method of preparing same and method of manufacturing thin film using sameHANSOL CHEMICAL CO LTD·Filed 2018·Granted Aug 2, 2022·0 cites·7 claims
- 0860US11999756B2Method for producing organometallic compound and thin film fabricated using organometallic compound obtained therebyHANSOL CHEMICAL CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·5 claims
- 0958US12365700B2Group 4 metal element-containing compound, precursor composition including same, and method for manufacturing thin film using sameHANSOL CHEMICAL CO LTD·Filed 2021·Granted Jul 22, 2025·0 cites·2 claims
- 1058US2025154651A1Method of forming thin film using organometallic compound and thin film formed therebyHANSOL CHEMICAL CO LTD·Filed 2022·Application pending·0 cites
- 1152US2025066914A1Novel composition, precursor composition including same, and method of manufacturing thin film using same precursor compositionHANSOL CHEMICAL CO LTD·Filed 2024·Application pending·0 cites
- 1252US2024218005A1Novel compound, precursor composition comprising same, and method for preparing thin film using sameHANSOL CHEMICAL CO LTD·Filed 2021·Application pending·0 cites
- 1347US2023257406A1Organometallic compound, precursor composition comprising same, and method for manufacturing thin film using sameHANSOL CHEMICAL CO LTD·Filed 2020·Application pending·0 cites
- 1444US11495453B2Vapor deposition precursor having excellent thermal stability and reactivity and preparing method thereforHANSOL CHEMICAL CO LTD·Filed 2018·Granted Nov 8, 2022·0 cites·6 claims
- 1544US11472821B2Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the sameHANSOL CHEMICAL CO LTD·Filed 2018·Granted Oct 18, 2022·0 cites·7 claims
- 1644US2009166878A1Semiconductor Device and Method of Fabricating the SameSEOK JANG HYEON·Filed 2008·Application pending·0 cites
- 1744US2023146033A1Semiconductor layer, method for manufacturing same, and transistor comprising sameHANSOL CHEMICAL CO LTD·Filed 2021·Application pending·0 cites
- 1843US2009166874A1Semiconductor Device and Method of Fabricating the SameSEOK JANG HYEON·Filed 2008·Application pending·0 cites
- 1939US11267828B2Silicon precursor and method of manufacturing silicon-containing thin film using the sameHANSOL CHEMICAL CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·4 claims
- 2036US2019249296A1Method for manufacturing silicon nitride thin film using plasma atomic layer depositionDNF CO LTD·Filed 2017·Application pending·0 cites
- 2135US2018230591A1Method for manufacturing silicon nitride thin film using plasma atomic layer deposition methodDNF CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →