Inventor · disambiguated record
Chakravarthy Gopalan
Also filed as: GOPALAN CHAKRAVARTHY
16 granted patents·3 pending applications·229 citations·filing 2003–2016
93Inventor score
Files withADESTO TECHNOLOGIES CORP7AXON TECHNOLOGIES CORP2CYPRESS SEMICONDUCTOR CORP2GOPALAN CHAKRAVARTHY2LEE WEI TI2
Top patents by PatentIndex Score
19 records- 0196US7402847B2Programmable logic circuit and method of using sameAXON TECHNOLOGIES CORP·Filed 2006·Granted Jul 22, 2008·67 cites·20 claims
- 0295US8426839B1Conducting bridge random access memory (CBRAM) device structuresMA YI·Filed 2010·Granted Apr 23, 2013·28 cites·11 claims
- 0393US8941089B2Resistive switching devices and methods of formation thereofADESTO TECHNOLOGIES CORP·Filed 2013·Granted Jan 27, 2015·18 cites·15 claims
- 0493US8866122B1Resistive switching devices having a buffer layer and methods of formation thereofLEE WEI TI·Filed 2012·Granted Oct 21, 2014·18 cites·36 claims
- 0592US7101728B2Programmable structure including an oxide electrolyte and method of forming programmable structureAXON TECHNOLOGIES CORP·Filed 2004·Granted Sep 5, 2006·68 cites·32 claims
- 0683US9401472B1Programmable impedance elements and devices that include such elementsGOPALAN CHAKRAVARTHY·Filed 2011·Granted Jul 26, 2016·10 cites·16 claims
- 0780US9099633B2Solid electrolyte memory elements with electrode interface for improved performanceADESTO TECHNOLOGIES CORP·Filed 2013·Granted Aug 4, 2015·3 cites·16 claims
- 0878US8847192B2Resistive switching devices having alloyed electrodes and methods of formation thereofLEE WEI TI·Filed 2012·Granted Sep 30, 2014·5 cites·32 claims
- 0971US8829482B1Variable impedance memory device structure and method of manufacture including programmable impedance memory cells and methods of forming the sameGALLO ANTONIO R·Filed 2011·Granted Sep 9, 2014·5 cites·27 claims
- 1070US9391270B1Memory cells with vertically integrated tunnel access device and programmable impedance elementADESTO TECHNOLOGIES CORP·Filed 2014·Granted Jul 12, 2016·2 cites·19 claims
- 1168US8816314B2Contact structure and method for variable impedance memory elementGOPALAN CHAKRAVARTHY·Filed 2012·Granted Aug 26, 2014·3 cites·24 claims
- 1265US9306161B1Fabrication methods of conducting bridge random access memory (CBRAM) device structuresADESTO TECHNOLOGIES CORP·Filed 2013·Granted Apr 5, 2016·1 cites·12 claims
- 1364US11056646B2Memory device having programmable impedance elements with a common conductor formed below bit linesADESTO TECHNOLOGIES CORP·Filed 2016·Granted Jul 6, 2021·1 cites·17 claims
- 1457US10147877B2Method of forming controllably conductive oxideCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 4, 2018·0 cites·5 claims
- 1553US9461247B2Method of forming controllably conductive oxideCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 4, 2016·0 cites·20 claims
- 1652US2014293676A1Programmable impedance memory elements and corresponding methodsADESTO TECHNOLOGIES CORP·Filed 2014·Application pending·0 cites
- 1748US8946020B2Method of forming controllably conductive oxideBUYNOSKI MATTHEW·Filed 2007·Granted Feb 3, 2015·0 cites·16 claims
- 1846US2016043310A1Programmable resistance memory elements with electrode interface layer and memory devices including the sameADESTO TECHNOLOGIES CORP·Filed 2015·Application pending·0 cites
- 1931US2004124407A1Scalable programmable structure, an array including the structure, and methods of forming the sameFiled 2003·Application pending·0 cites
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