Inventor · disambiguated record
Hee-Choul Park
Also filed as: PARK HEE CHOUL
21 granted patents·1 pending application·591 citations·filing 1987–2025
96Inventor score
Top patents by PatentIndex Score
22 records- 0195US5973972APrecharge system for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 26, 1999·166 cites·3 claims
- 0291US6134180ASynchronous burst semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 17, 2000·95 cites·15 claims
- 0376US2025266065A1Global data line of multi-array synchronous random access memory (sram)SAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0474US5592121AInternal power-supply voltage supplier of semiconductor integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Jan 7, 1997·31 cites·17 claims
- 0574US5311076ATristate data output buffer having reduced switching noise and intermediate-level settingSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted May 10, 1994·36 cites·20 claims
- 0672US6031785ARandom access memory having burst mode capability and method for operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 29, 2000·35 cites·21 claims
- 0769US4972373APrecharge system in a SRAMSAMSUNG SEMICONDUCTORS & TELEC·Filed 1987·Granted Nov 20, 1990·33 cites·2 claims
- 0867US12283338B2Global data line of multi-array synchronous random access memory (SRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 22, 2025·0 cites·16 claims
- 0967US5477497ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Dec 19, 1995·26 cites·28 claims
- 1066US6160746ASemiconductor memory with auto-tracking bit line precharge schemeSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 12, 2000·25 cites·6 claims
- 1165US5760446AElectrostatic discharge structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 2, 1998·24 cites·4 claims
- 1259US5793226AData output buffer for multiple power suppliesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 11, 1998·16 cites·18 claims
- 1353US5949721AData output related circuit which is suitable for semiconductor memory device for high -speed operationSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 7, 1999·15 cites·15 claims
- 1453US4962324AEqualizing circuit for a sense amplifierSAMSUNG ELECTRONIC·Filed 1989·Granted Oct 9, 1990·13 cites·2 claims
- 1550US5825698ARedundancy decoding circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 20, 1998·13 cites·6 claims
- 1650US5732032ASemiconductor memory device having a burn-in control circuit and burn-in test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 24, 1998·13 cites·11 claims
- 1749US5991229AInternal clock generation circuit for synchronous semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 23, 1999·12 cites·21 claims
- 1846US5815459AAddress decoding . . . semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 29, 1998·10 cites·10 claims
- 1943US5487050ADecoding circuit and method for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Jan 23, 1996·10 cites·10 claims
- 2037US5659510AIntegrated circuit devices with reliable fuse-based mode selection capability and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 19, 1997·6 cites·7 claims
- 2134US6393575B1Semiconductor device having input buffersSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 21, 2002·7 cites·4 claims
- 2230US5305279ASemiconductor memory device having word line selection logic circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Apr 19, 1994·5 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →