Inventor · disambiguated record
Stephan Kronholz
Also filed as: KRONHOLZ STEPHAN · KRONHOLZ STEPHAN D · KRONHOLZ STEPHAN-DETLEF
83 granted patents·23 pending applications·286 citations·filing 2005–2022
99Inventor score
Files withKRONHOLZ STEPHAN48GLOBALFOUNDRIES INC15INTERROLL HOLDING AG5JAVORKA PETER5KRONHOLZ STEPHAN-DETLEF5
Top patents by PatentIndex Score
106 records- 0192US8071442B2Transistor with embedded Si/Ge material having reduced offset to the channel regionKRONHOLZ STEPHAN·Filed 2009·Granted Dec 6, 2011·22 cites·17 claims
- 0290US8536009B2Differential threshold voltage adjustment in PMOS transistors by differential formation of a channel semiconductor materialJAVORKA PETER·Filed 2011·Granted Sep 17, 2013·13 cites·19 claims
- 0390US8334185B2Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacerKRONHOLZ STEPHAN·Filed 2011·Granted Dec 18, 2012·15 cites·11 claims
- 0490US8124467B2Reducing silicide resistance in silicon/germanium-containing drain/source regions of transistorsKRONHOLZ STEPHAN·Filed 2010·Granted Feb 28, 2012·11 cites·18 claims
- 0588US8748275B2Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topographyTHEES HANS-JUERGEN·Filed 2011·Granted Jun 10, 2014·11 cites·24 claims
- 0688US8497180B2Transistor with boot shaped source/drain regionsJAVORKA PETER·Filed 2011·Granted Jul 30, 2013·10 cites·16 claims
- 0787US8609498B2Transistor with embedded Si/Ge material having reduced offset and superior uniformityKRONHOLZ STEPHAN·Filed 2011·Granted Dec 17, 2013·8 cites·18 claims
- 0887US7691433B2Method for structured application of molecules to a strip conductor and molecular memory matrixFORSCHUNGSZENTRUM JUELICH GMBH·Filed 2005·Granted Apr 6, 2010·26 cites·11 claims
- 0986US8809151B2Transistor comprising an embedded sigma shaped sequentially formed semiconductor alloyFLACHOWSKY STEFAN·Filed 2011·Granted Aug 19, 2014·8 cites·17 claims
- 1086US8349694B2Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloyGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 8, 2013·9 cites·18 claims
- 1186US8343826B2Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloysGLOBALFOUNDRIES INC·Filed 2011·Granted Jan 1, 2013·8 cites·20 claims
- 1285US9263582B2Strain engineering in semiconductor devices by using a piezoelectric materialGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·6 cites·16 claims
- 1385US8728896B2Embedded sigma-shaped semiconductor alloys formed in transistors by applying a uniform oxide layer prior to cavity etchingKRONHOLZ STEPHAN·Filed 2011·Granted May 20, 2014·7 cites·17 claims
- 1485US8361858B2Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloyADVANCED MICRO DEVICES INC·Filed 2010·Granted Jan 29, 2013·9 cites·20 claims
- 1583US9224863B2Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layerJAVORKA PETER·Filed 2012·Granted Dec 29, 2015·6 cites·25 claims
- 1682US8357573B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrodeGLOBALFOUNDRIES INC·Filed 2010·Granted Jan 22, 2013·5 cites·15 claims
- 1782US8338892B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrodeKRONHOLZ STEPHAN·Filed 2010·Granted Dec 25, 2012·5 cites·20 claims
- 1881US8258053B2Performance enhancement in transistors comprising high-K metal gate stack by reducing a width of offset spacersKRONHOLZ STEPHAN·Filed 2010·Granted Sep 4, 2012·6 cites·18 claims
- 1981US8247282B2Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation processKRONHOLZ STEPHAN·Filed 2010·Granted Aug 21, 2012·6 cites·17 claims
- 2077US8324119B2Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch processREICHEL CARSTEN·Filed 2010·Granted Dec 4, 2012·6 cites·16 claims
- 2176US8796080B2Methods of epitaxially forming materials on transistor devicesKRONHOLZ STEPHAN·Filed 2011·Granted Aug 5, 2014·4 cites·13 claims
- 2276US8642419B2Methods of forming isolation structures for semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Feb 4, 2014·4 cites·9 claims
- 2375US8969190B2Methods of forming a layer of silicon on a layer of silicon/germaniumKRONHOLZ STEPHAN·Filed 2012·Granted Mar 3, 2015·3 cites·24 claims
- 2475US8765542B1Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regionsGLOBALFOUNDARIES INC·Filed 2013·Granted Jul 1, 2014·4 cites·16 claims
- 2575US8765559B2Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor materialKRONHOLZ STEPHAN·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 2675US8486786B2Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth processKRONHOLZ STEPHAN·Filed 2010·Granted Jul 16, 2013·4 cites·24 claims
- 2775US8202777B2Transistor with an embedded strain-inducing material having a gradually shaped configurationKRONHOLZ STEPHAN·Filed 2009·Granted Jun 19, 2012·5 cites·26 claims
- 2874US8652917B2Superior stability of characteristics of transistors having an early formed high-K metal gateLENSKI MARKUS·Filed 2012·Granted Feb 18, 2014·4 cites·20 claims
- 2974US8173501B2Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy depositionKRONHOLZ STEPHAN·Filed 2010·Granted May 8, 2012·3 cites·16 claims
- 3073US8293596B2Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Oct 23, 2012·4 cites·22 claims
- 3172US8664066B2Formation of a channel semiconductor alloy by forming a nitride based hard mask layerPAL ROHIT·Filed 2012·Granted Mar 4, 2014·3 cites·20 claims
- 3272US8541281B1Replacement gate process flow for highly scaled semiconductor devicesKRONHOLZ STEPHAN·Filed 2012·Granted Sep 24, 2013·4 cites·18 claims
- 3372US8338274B2Transistor device comprising an embedded semiconductor alloy having an asymmetric configurationKRONHOLZ STEPHAN·Filed 2009·Granted Dec 25, 2012·3 cites·25 claims
- 3471US8939765B2Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growthKRONHOLZ STEPHAN·Filed 2010·Granted Jan 27, 2015·3 cites·22 claims
- 3571US8703551B2Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatterKRONHOLZ STEPHAN·Filed 2011·Granted Apr 22, 2014·2 cites·14 claims
- 3670US9006835B2Transistor with embedded Si/Ge material having reduced offset and superior uniformityGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 14, 2015·2 cites·19 claims
- 3770US8481381B2Superior integrity of high-k metal gate stacks by preserving a resist material above end caps of gate electrode structuresKRONHOLZ STEPHAN-DETLEF·Filed 2011·Granted Jul 9, 2013·2 cites·10 claims
- 3867US8884379B2Strain engineering in semiconductor devices by using a piezoelectric materialKRONHOLZ STEPHAN·Filed 2010·Granted Nov 11, 2014·2 cites·17 claims
- 3967US8735303B2Methods of forming PEET devices with different structures and performance characteristicsTHEES HANS-JUERGEN·Filed 2011·Granted May 27, 2014·2 cites·19 claims
- 4067US8513074B2Reduced threshold voltage-width dependency and reduced surface topography in transistors comprising high-k metal gate electrode structures by a late carbon incorporationJAVORKA PETER·Filed 2011·Granted Aug 20, 2013·2 cites·19 claims
- 4167US8486768B2Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor materialKURZ ANDREAS·Filed 2011·Granted Jul 16, 2013·2 cites·20 claims
- 4267US8460980B2Transistor comprising an embedded semiconductor alloy in drain and source regions extending under the gate electrodeKRONHOLZ STEPHAN·Filed 2010·Granted Jun 11, 2013·2 cites·15 claims
- 4367US8048748B2Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2010·Granted Nov 1, 2011·2 cites·20 claims
- 4466US8664049B2Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor materialKRONHOLZ STEPHAN·Filed 2010·Granted Mar 4, 2014·2 cites·22 claims
- 4565US8969916B2Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrodeGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 3, 2015·1 cites·20 claims
- 4665US8835209B2Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areasKRONHOLZ STEPHAN·Filed 2012·Granted Sep 16, 2014·2 cites·24 claims
- 4765US8673668B2Test structure for controlling the incorporation of semiconductor alloys in transistors comprising high-k metal gate electrode structuresKRONHOLZ STEPHAN·Filed 2010·Granted Mar 18, 2014·2 cites·17 claims
- 4864US8703620B2Methods for PFET fabrication using APM solutionsWASYLUK JOANNA·Filed 2012·Granted Apr 22, 2014·2 cites·10 claims
- 4964US8513080B2Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor deviceKRONHOLZ STEPHAN·Filed 2011·Granted Aug 20, 2013·2 cites·20 claims
- 5063US8236654B2Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformitiesKRONHOLZ STEPHAN·Filed 2009·Granted Aug 7, 2012·2 cites·25 claims
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