Inventor · disambiguated record
Yoshitaka Kuraoka
Also filed as: KURAOKA YOSHITAKA
32 granted patents·14 pending applications·32 citations·filing 2007–2025
94Inventor score
Top patents by PatentIndex Score
46 records- 0189US10410859B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Sep 10, 2019·4 cites·20 claims
- 0285US8404045B2Method for manufacturing group III nitride single crystalsKURAOKA YOSHITAKA·Filed 2010·Granted Mar 26, 2013·4 cites·14 claims
- 0381US8378386B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceNGK INSULATORS LTD·Filed 2010·Granted Feb 19, 2013·6 cites·13 claims
- 0480US10770552B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2020·Granted Sep 8, 2020·1 cites·8 claims
- 0578US8410552B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Apr 2, 2013·5 cites·13 claims
- 0677US9231155B2Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devicesNGK INSULATORS LTD·Filed 2013·Granted Jan 5, 2016·3 cites·9 claims
- 0772US10629688B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Apr 21, 2020·0 cites·12 claims
- 0872US9768352B2Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using sameNGK INSULATORS LTD·Filed 2016·Granted Sep 19, 2017·0 cites·18 claims
- 0970US9543473B2Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using sameNGK INSULATORS LTD·Filed 2016·Granted Jan 10, 2017·0 cites·17 claims
- 1068US9882042B2Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrateNGK INSULATORS LTD·Filed 2015·Granted Jan 30, 2018·1 cites·2 claims
- 1166US2022209062A1Composite Substrate, Light Emitting Element, and Methods for Manufacturing Composite Substrate and Light Emitting ElementNGK INSULATORS LTD·Filed 2022·Application pending·0 cites
- 1265US10030318B2Composite substrate, method for fabricating same, function element, and seed crystal substrateNGK INSULATORS LTD·Filed 2015·Granted Jul 24, 2018·1 cites·5 claims
- 1365US8044485B2Semiconductor deviceNGK INSULATORS LTD·Filed 2007·Granted Oct 25, 2011·3 cites·19 claims
- 1465US2025389051A1Group-iii element nitride substrate and method of producing group-iii element nitride substrateNGK INSULATORS LTD·Filed 2025·Application pending·0 cites
- 1564US9196480B2Method for treating group III nitride substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2014·Granted Nov 24, 2015·1 cites·11 claims
- 1664US2025146179A1Composite substrate, and substrate for epitaxially growing group 13 element nitrideNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 1762US7982241B2Epitaxial substrate, semiconductor device substrate, and HEMT deviceNGK INSULATORS LTD·Filed 2009·Granted Jul 19, 2011·1 cites·17 claims
- 1861US10707373B2Polycrystalline gallium nitride self-supported substrate and light emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Jul 7, 2020·0 cites·13 claims
- 1961US8890208B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Nov 18, 2014·1 cites·14 claims
- 2060US10598369B2Heat discharge structures for light source devices and light source systemsNGK INSULATORS LTD·Filed 2018·Granted Mar 24, 2020·0 cites·8 claims
- 2160US10580646B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Mar 3, 2020·0 cites·20 claims
- 2260US10418239B2Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elementsNGK INSULATORS LTD·Filed 2018·Granted Sep 17, 2019·0 cites·8 claims
- 2360US2024392474A1Group 13 element nitride single crystal substrate, substrate for epitaxial growth layer formation, laminate, and epitaxial substrate for semiconductor deviceNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 2459US10804432B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Oct 13, 2020·0 cites·13 claims
- 2559US2024347604A1Group iii element nitride semiconductor substrate, epitaxial substrate, and functional elementNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 2659US2024401238A1Laminate having group 13 element nitride single crystal substrateNGK INSULATORS LTD·Filed 2024·Application pending·0 cites
- 2759US2023250555A1Group 13 element nitride crystal layer growth method, nitride semiconductor ingot and sputtering targetNGK INSULATORS LTD·Filed 2023·Application pending·0 cites
- 2857US10734548B2Free-standing substrate comprising polycrystalline group 13 element nitride and light-emitting element using sameNGK INSULATORS LTD·Filed 2018·Granted Aug 4, 2020·0 cites·13 claims
- 2957US8853828B2Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor deviceSUMIYA SHIGEAKI·Filed 2012·Granted Oct 7, 2014·1 cites·20 claims
- 3056US9653651B2Light emitting device and method for manufacturing light emitting deviceNGK INSULATORS LTD·Filed 2016·Granted May 16, 2017·0 cites·10 claims
- 3156US2023215969A9Method for producing group 13 element nitride crystal layer, and seed crystal substrateNGK INSULATORS LTD·Filed 2022·Application pending·0 cites
- 3255US10347755B2Group 13 nitride composite substrate semiconductor device, and method for manufacturing group 13 nitride composite substrateNGK INSULATORS LTD·Filed 2016·Granted Jul 9, 2019·0 cites·2 claims
- 3355US2017211797A1Heat Discharge Structures for Light Source Devices and Light Source SystemsNGK INSULATORS LTD·Filed 2017·Application pending·0 cites
- 3449US2025201636A1Method of inspecting group-iii element nitride substrate, method of producing group-iii element nitride substrate, and method of producing semiconductor deviceNGK INSULATORS LTD·Filed 2025·Application pending·0 cites
- 3549US2016343906A1Composite Substrate, Light Emitting Element, and Methods for Manufacturing Composite Substrate and Light Emitting ElementNGK INSULATORS LTD·Filed 2016·Application pending·0 cites
- 3648US9660138B2Light emitting device and method for manufacturing light emitting deviceNGK INSULATORS LTD·Filed 2016·Granted May 23, 2017·0 cites·10 claims
- 3748US9171914B2Semiconductor deviceNGK INSULATORS LTD·Filed 2012·Granted Oct 27, 2015·0 cites·6 claims
- 3847US10128406B2GaN template substrateNGK INSULATORS LTD·Filed 2016·Granted Nov 13, 2018·0 cites·6 claims
- 3947US9653649B2Gallium nitride substrates and functional devicesNGK INSULATORS LTD·Filed 2015·Granted May 16, 2017·0 cites·8 claims
- 4047US2007215885A1Semiconductor deviceNGK INSULATORS LTD·Filed 2007·Application pending·0 cites
- 4147US2021013366A1Group 13 element nitride layer, free-standing substrate, functional element, and method of producing group 13 element nitride layerNGK INSULATORS LTD·Filed 2020·Application pending·0 cites
- 4244US10332975B2Epitaxial substrate for semiconductor device and method for manufacturing sameNGK INSULATORS LTD·Filed 2017·Granted Jun 25, 2019·0 cites·8 claims
- 4343US2014054605A1Composite Substrates, Light Emitting Devices and a Method of Producing Composite SubstratesNGK INSULATORS LTD·Filed 2013·Application pending·0 cites
- 4442US8598626B2Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structureMIYOSHI MAKOTO·Filed 2010·Granted Dec 3, 2013·0 cites·7 claims
- 4540US10541514B2Surface-emitting device, vertical external-cavity surface-emitting laser, and method for manufacturing surface-emitting deviceNGK INSULATORS LTD·Filed 2017·Granted Jan 21, 2020·0 cites·19 claims
- 4637US8872226B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Oct 28, 2014·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →