Inventor · disambiguated record
Peijun Chen
Also filed as: CHEN PEIJUN · CHEN PEIJUN J · CHEN PEIJUN JERRY
24 granted patents·5 pending applications·194 citations·filing 1991–2025
95Inventor score
Files withTEXAS INSTRUMENTS INC14ASM IP HOLDING BV4BEIJING QIHOO TECHNOLOGY CO2HANGZHOU POWER SUPPLY COMPANY OF STATE GRID ZHEJIANG ELECTRIC POWER2IMEC INTER UNI MICRO ELECTR2
Top patents by PatentIndex Score
29 records- 0195US7211516B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted May 1, 2007·34 cites·16 claims
- 0293US7511350B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 31, 2009·20 cites·5 claims
- 0393US7344985B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 18, 2008·21 cites·14 claims
- 0492US7355255B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 8, 2008·17 cites·6 claims
- 0586US10872771B2Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structuresASM IP HOLDING BV·Filed 2019·Granted Dec 22, 2020·4 cites·16 claims
- 0682US11318858B2Intelligent electric-vehicle charging stationHANGZHOU POWER SUPPLY COMPANY OF STATE GRID ZHEJIANG ELECTRIC POWER·Filed 2019·Granted May 3, 2022·6 cites·9 claims
- 0776US7465626B2Method for forming a high-k dielectric stackIMEC INTER UNI MICRO ELECTR·Filed 2005·Granted Dec 16, 2008·6 cites·15 claims
- 0871US6140243ALow temperature process for post-etch defluoridation of metalsTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 31, 2000·39 cites·15 claims
- 0971US2025313953A1Methods and systems for forming doped silicon nitride filmsASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 1067US11267361B2System and method for ordered charging management of charging stationHANGZHOU POWER SUPPLY COMPANY OF STATE GRID ZHEJIANG ELECTRIC POWER·Filed 2019·Granted Mar 8, 2022·2 cites·14 claims
- 1166USD983559SSoap dispenserSHENZHEN DENGDENG E COMMERCE CO LTD·Filed 2021·Granted Apr 18, 2023·4 cites·1 claims
- 1264US12378667B2Methods and systems for forming doped silicon nitride filmsASM IP HOLDING BV·Filed 2022·Granted Aug 5, 2025·0 cites·21 claims
- 1361US11501973B2Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structuresASM IP HOLDING BV·Filed 2020·Granted Nov 15, 2022·0 cites·18 claims
- 1461US7803703B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2008·Granted Sep 28, 2010·2 cites·10 claims
- 1561US2016283582A1Device and method for detecting similar text, and applicationBEIJING QIHOO TECHNOLOGY CO·Filed 2014·Application pending·0 cites
- 1657US7208398B2Metal-halogen physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 24, 2007·7 cites·20 claims
- 1755US12289157B2Two-phase access authentication method integrating spatial-temporal features in space-air-ground integrated networksZhejiang Lab·Filed 2022·Granted Apr 29, 2025·0 cites·8 claims
- 1855US7825025B2Method and system for improved nickel silicideTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 2, 2010·5 cites·18 claims
- 1950US2009079016A1Method for forming a dielectric stackIMEC INTER UNI MICRO ELECTR·Filed 2008·Application pending·0 cites
- 2047US8372750B2Method and system for improved nickel silicideTEXAS INSTRUMENTS INC·Filed 2010·Granted Feb 12, 2013·0 cites·16 claims
- 2147US7435672B2Metal-germanium physical vapor deposition for semiconductor device defect reductionTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 14, 2008·3 cites·16 claims
- 2246US7132365B2Treatment of silicon prior to nickel silicide formationTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 7, 2006·2 cites·10 claims
- 2346US6143634ASemiconductor process with deuterium predominance at high temperatureTEXAS INSTRUMENTS INC·Filed 1998·Granted Nov 7, 2000·12 cites·13 claims
- 2445US10888299B2Method and apparatus for x-ray imaging and gain calibration of detector and detector bracketGEN ELECTRIC·Filed 2016·Granted Jan 12, 2021·0 cites·15 claims
- 2541US7199032B2Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffingTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 3, 2007·0 cites·23 claims
- 2637US10217025B2Method and apparatus for determining relevance between news and for calculating relevance among multiple pieces of newsBEIJING QIHOO TECHNOLOGY CO·Filed 2016·Granted Feb 26, 2019·0 cites·10 claims
- 2736US2006024938A1Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regionsTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
- 2834US5286340AProcess for controlling silicon etching by atomic hydrogenUNIV PITTSBURGH·Filed 1991·Granted Feb 15, 1994·10 cites·8 claims
- 2933US2017369836A1Serum-free medium for full suspension culture of mdck cells and preparation method of serum-free mediumZHAOQING DAHUANONG BIOLOGICAL MEDICINE CO LTD·Filed 2017·Application pending·0 cites
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