Inventor · disambiguated record
Koichi Osano
Also filed as: OSANO KOICHI
38 granted patents·1 pending application·664 citations·filing 1987–2012
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD18PANASONIC CORP15OSANO KOICHI4FUJII SATORU1KANZAWA YOSHIHIKO1
Top patents by PatentIndex Score
39 records- 0198US8018760B2Resistance variable element and resistance variable memory apparatusPANASONIC CORP·Filed 2007·Granted Sep 13, 2011·102 cites·14 claims
- 0297US8022502B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementPANASONIC CORP·Filed 2008·Granted Sep 20, 2011·60 cites·23 claims
- 0396US7577022B2Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltagePANASONIC CORP·Filed 2005·Granted Aug 18, 2009·56 cites·46 claims
- 0493US7525832B2Memory device and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Apr 28, 2009·34 cites·30 claims
- 0592US8445319B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted May 21, 2013·15 cites·4 claims
- 0690US8058636B2Variable resistance nonvolatile memory apparatusOSANO KOICHI·Filed 2008·Granted Nov 15, 2011·29 cites·5 claims
- 0789US7786548B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Aug 31, 2010·13 cites·17 claims
- 0888US7965539B2Nonvolatile memory element, nonvolatile semiconductor memory apparatus, and reading method and writing method thereforPANASONIC CORP·Filed 2008·Granted Jun 21, 2011·13 cites·15 claims
- 0988US7369431B2Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 6, 2008·41 cites·10 claims
- 1086US7463506B2Memory device, memory circuit and semiconductor integrated circuit having variable resistancePANASONIC CORP·Filed 2004·Granted Dec 9, 2008·31 cites·17 claims
- 1185US5028280ASoft magnetic alloy films having a modulated nitrogen contentMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jul 2, 1991·33 cites·5 claims
- 1285US4904543ACompositionally modulated, nitrided alloy films and method for making the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Feb 27, 1990·46 cites·33 claims
- 1383US4836865AMagnetic nitride filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Jun 6, 1989·26 cites·5 claims
- 1478US7826247B2Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistorPANASONIC CORP·Filed 2008·Granted Nov 2, 2010·9 cites·9 claims
- 1577US5403457AMethod for making soft magnetic filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Apr 4, 1995·25 cites·11 claims
- 1676US8217489B2Nonvolatile memory element having a tantalum oxide variable resistance layerOSANO KOICHI·Filed 2011·Granted Jul 10, 2012·6 cites·5 claims
- 1773US5262248ASoft magnetic alloy filmsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Nov 16, 1993·21 cites·2 claims
- 1873US5084795AMagnetic head and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1990·Granted Jan 28, 1992·22 cites·7 claims
- 1971US7948789B2Resistance variable element, nonvolatile switching element, and resistance variable memory apparatusPANASONIC CORP·Filed 2008·Granted May 24, 2011·7 cites·10 claims
- 2070US8492875B2Nonvolatile memory element having a tantalum oxide variable resistance layerOSANO KOICHI·Filed 2012·Granted Jul 23, 2013·3 cites·10 claims
- 2168US5049209AMagnetic nitride filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Sep 17, 1991·14 cites·1 claims
- 2267US7787280B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2006·Granted Aug 31, 2010·6 cites·10 claims
- 2362US9236381B2Nonvolatile memory element, nonvolatile memory apparatus, nonvolatile semiconductor apparatus, and method of manufacturing nonvolatile memory elementFUJII SATORU·Filed 2007·Granted Jan 12, 2016·2 cites·25 claims
- 2460US8018761B2Resistance variable element, resistance variable memory apparatus, and resistance variable apparatusPANASONIC CORP·Filed 2007·Granted Sep 13, 2011·4 cites·13 claims
- 2555US6433958B1Magnetic head, method for producing the same, video recording and reproduction apparatus including the magnetic head, and video camera including the magnetic headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Aug 13, 2002·2 cites·25 claims
- 2654US6735047B1Magnetic head and magnetic recording/reproducing apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 11, 2004·2 cites·7 claims
- 2752US7964869B2Memory element, memory apparatus, and semiconductor integrated circuitPANASONIC CORP·Filed 2007·Granted Jun 21, 2011·2 cites·21 claims
- 2850US7714311B2Memory device, memory circuit and semiconductor integrated circuit having variable resistancePANASONIC CORP·Filed 2008·Granted May 11, 2010·1 cites·9 claims
- 2950US5429731AMethod for forming a soft magnetic nitride layer on a magnetic headMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jul 4, 1995·14 cites·5 claims
- 3046US7855910B2Electric element, memory device, and semiconductor integrated circuitPANASONIC CORP·Filed 2007·Granted Dec 21, 2010·1 cites·10 claims
- 3146US5034273ANitrogen-containing magnetic alloy filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Jul 23, 1991·7 cites·2 claims
- 3244US4897318ALaminated magnetic materialsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Jan 30, 1990·8 cites·18 claims
- 3343US6588092B2Method for producing a magnetic head, the magnetic head including a pair of magnetic core halvesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 8, 2003·0 cites·19 claims
- 3441US2010182821A1Memory device, memory circuit and semiconductor integrated circuit having variable resistancePANASONIC CORP·Filed 2010·Application pending·0 cites
- 3540US7304822B2Magnetic head with multilayer film including metal magnetic films and non-magnetic films and magnetic recording/reproducing deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 4, 2007·0 cites·10 claims
- 3639US8263961B2Thin film memory device having a variable resistanceOSANO KOICHI·Filed 2004·Granted Sep 11, 2012·2 cites·5 claims
- 3737US5917682AMagnetic head and manufacturing method thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jun 29, 1999·3 cites·28 claims
- 3835US6072667AMethod and apparatus for analysis of magnetic characteristics of magnetic device, magnetic head, and magnetic recording and reproducing apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jun 6, 2000·2 cites·2 claims
- 3935US5602473AMethod and apparatus for analysis of magnetic characteristics of magnetic device, magnetic head, and magnetic recording and reproducing apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Feb 11, 1997·2 cites·13 claims
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