Inventor · disambiguated record
Seiji Nakahata
Also filed as: NAKAHATA SEIJI
94 granted patents·31 pending applications·1,212 citations·filing 1993–2020
99Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES93NAKAHATA SEIJI8FUJIWARA SHINSUKE4ISHIBASHI KEIJI4OKAHISA TAKUJI3
Top patents by PatentIndex Score
125 records- 0199US7303630B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Dec 4, 2007·291 cites·42 claims
- 0298US7816238B2GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 19, 2010·43 cites·8 claims
- 0396US8404042B2Group-III nitride crystal compositeMIZUHARA NAHO·Filed 2012·Granted Mar 26, 2013·28 cites·20 claims
- 0496US7655960B2A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameSUMITO ELECTRIC IND LTD·Filed 2006·Granted Feb 2, 2010·78 cites·3 claims
- 0596US7473315B2AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jan 6, 2009·23 cites·92 claims
- 0696US7416604B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 26, 2008·41 cites·2 claims
- 0796US7105865B2AlxInyGa1−x−yN mixture crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Sep 12, 2006·50 cites·29 claims
- 0895US7772585B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 10, 2010·24 cites·23 claims
- 0995US6667184B2Single crystal GaN substrate, method of growing same and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Dec 23, 2003·74 cites·42 claims
- 1095US6284690B1Si3N4 ceramic, Si-base composition for production thereof and processes for producing theseSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Sep 4, 2001·96 cites·14 claims
- 1194US7589000B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Sep 15, 2009·20 cites·4 claims
- 1293US7854804B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Dec 21, 2010·16 cites·4 claims
- 1393US7732236B2III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Jun 8, 2010·20 cites·14 claims
- 1491US8828140B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 9, 2014·7 cites·8 claims
- 1591US8258051B2Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystalMIZUHARA NAHO·Filed 2009·Granted Sep 4, 2012·14 cites·8 claims
- 1691US8110484B1Conductive nitride semiconductor substrate and method for producing the sameSATO FUMITAKA·Filed 2010·Granted Feb 7, 2012·16 cites·17 claims
- 1791US7771532B2Nitride semiconductor substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Aug 10, 2010·14 cites·28 claims
- 1891US7528055B2Method of producing a nitride semiconductor device and nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted May 5, 2009·15 cites·68 claims
- 1989US10458043B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 29, 2019·2 cites·6 claims
- 2089US8192543B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2008·Granted Jun 5, 2012·9 cites·3 claims
- 2186US7901960B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 8, 2011·8 cites·7 claims
- 2286US7112826B2Single crystal GaN substrate semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Sep 26, 2006·29 cites·30 claims
- 2385US8823142B2GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)SUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 2, 2014·5 cites·3 claims
- 2485US8524575B2Group III nitride crystal and method for producing the sameUEMATSU KOJI·Filed 2011·Granted Sep 3, 2013·5 cites·8 claims
- 2585US7905958B2Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Mar 15, 2011·10 cites·8 claims
- 2684US9136337B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 15, 2015·7 cites·10 claims
- 2783US8598685B2GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereofFUJIWARA SHINSUKE·Filed 2010·Granted Dec 3, 2013·5 cites·15 claims
- 2882US8872309B2Composite of III-nitride crystal on laterally stacked substratesSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 28, 2014·3 cites·3 claims
- 2982US7851381B2Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Dec 14, 2010·8 cites·15 claims
- 3082US7556687B2Gallium nitride crystal substrate and method of producing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Jul 7, 2009·3 cites·6 claims
- 3181US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 3281US8709923B2Method of manufacturing III-nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 29, 2014·3 cites·6 claims
- 3381US7087114B2Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2002·Granted Aug 8, 2006·17 cites·92 claims
- 3480US8501592B2Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrateFUJIWARA SHINSUKE·Filed 2011·Granted Aug 6, 2013·1 cites·22 claims
- 3579US8421190B2Group III nitride semiconductor substrate and manufacturing method thereofOKAHISA TAKUJI·Filed 2010·Granted Apr 16, 2013·4 cites·7 claims
- 3679US8198177B2AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2011·Granted Jun 12, 2012·3 cites·1 claims
- 3779US7858502B2Fabrication method and fabrication apparatus of group III nitride crystal substanceSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Dec 28, 2010·4 cites·6 claims
- 3879US7485484B2Group III-V crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 3, 2009·4 cites·6 claims
- 3978US8002892B2Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 23, 2011·6 cites·2 claims
- 4076US7794543B2Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Sep 14, 2010·3 cites·8 claims
- 4176US6544917B1Si3N4 ceramic, Si-base composition for its production, and method for its productionSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Apr 8, 2003·14 cites·12 claims
- 4275US10837124B2Gallium nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Nov 17, 2020·0 cites·5 claims
- 4374US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 4474US8349078B2Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 8, 2013·3 cites·35 claims
- 4574US8134223B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2009·Granted Mar 13, 2012·3 cites·4 claims
- 4672US8362521B2III nitride semiconductor crystal, III nitride semiconductor device, and light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 29, 2013·2 cites·13 claims
- 4772US8304334B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2012·Granted Nov 6, 2012·2 cites·5 claims
- 4872US7863167B2Method of manufacturing group III nitride crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 4, 2011·1 cites·5 claims
- 4972US7297625B2Group III-V crystal and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Nov 20, 2007·10 cites·14 claims
- 5071US7723142B2Growth method of GaN crystal, and GaN crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted May 25, 2010·3 cites·6 claims
Showing the top 50 of 125 patent records by PatentIndex Score.
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