Inventor · disambiguated record
Ruo Fang Zhang
Also filed as: Zhang Ruo Fang
6 granted patents·3 citations·filing 2018–2023
70Inventor score
Files withYANGTZE MEMORY TECH CO LTD6
Top patents by PatentIndex Score
6 records- 0181US10714493B2Semiconductor plug protected by protective dielectric layer in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 0279US12446217B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 0372US11737263B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·10 claims
- 0461US11805643B2Method of fabrication thereof a multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 0555US11502094B2Multi-level vertical memory device including inter-level channel connectorYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Nov 15, 2022·0 cites·13 claims
- 0649US11145667B23D NAND memory device and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →