Inventor · disambiguated record
June-Mo Koo
Also filed as: KOO JUNE M · KOO JUNE-MO
36 granted patents·15 pending applications·652 citations·filing 2004–2014
97Inventor score
Top patents by PatentIndex Score
51 records- 0199US7622761B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 24, 2009·247 cites·13 claims
- 0297US7910909B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·50 cites·18 claims
- 0397US7700935B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·43 cites·13 claims
- 0495US8124968B2Non-volatile memory deviceKOO JUNE-MO·Filed 2009·Granted Feb 28, 2012·91 cites·7 claims
- 0595US8017991B2Non-volatile memory device and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 13, 2011·35 cites·26 claims
- 0693US9443892B2Image sensor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·11 cites·13 claims
- 0793US8570409B2Image sensors and methods of manufacturing image sensorsCHOI SANG-JUN·Filed 2010·Granted Oct 29, 2013·17 cites·10 claims
- 0893US7598095B2Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 6, 2009·25 cites·22 claims
- 0991US7948024B2Multi-layered, vertically stacked non-volatile memory device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 24, 2011·16 cites·7 claims
- 1090US7560344B2Semiconductor device having a pair of fins and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·15 cites·12 claims
- 1184US8120006B2Non-volatile memory deviceKIM SUK-PIL·Filed 2009·Granted Feb 21, 2012·13 cites·20 claims
- 1284US7932551B2Nonvolatile memory device and method of fabricating the same comprising a dual fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 26, 2011·11 cites·20 claims
- 1381US7910967B2Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 22, 2011·7 cites·26 claims
- 1480US8014068B2Wire grid polarizer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 6, 2011·9 cites·12 claims
- 1578US7829932B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·8 cites·6 claims
- 1677US7885115B2Non-volatile memory devices and methods of operating non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 8, 2011·10 cites·20 claims
- 1777US7833890B2Semiconductor device having a pair of fins and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·5 cites·13 claims
- 1876US7750393B2Non-volatile memory device with independent channel regions adjacent different sides of a common control gateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·6 cites·13 claims
- 1976US7663136B2Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·2 cites·6 claims
- 2073US7796432B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·8 cites·20 claims
- 2170US7947590B2Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 24, 2011·3 cites·11 claims
- 2267US7691441B2Method of forming carbon fibers using metal-organic chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 6, 2010·1 cites·16 claims
- 2363US7813180B2Non-volatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·2 cites·22 claims
- 2463US7551491B2Unit cell of a non-volatile memory device, a non-volatile memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·5 cites·22 claims
- 2562US8148767B2Semiconductor memory devices including recess-type control gate electrodes and methods of fabricating the semiconductor memory devicesPARK YOON-DONG·Filed 2007·Granted Apr 3, 2012·1 cites·30 claims
- 2662US7986545B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 26, 2011·4 cites·13 claims
- 2761US7894265B2Non-volatile memory device and operation method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 22, 2011·4 cites·22 claims
- 2860US7745233B2Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 29, 2010·1 cites·16 claims
- 2959US9209214B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 8, 2015·0 cites·19 claims
- 3053US8097304B2Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the sameCHOI HYUK-SOON·Filed 2006·Granted Jan 17, 2012·0 cites·16 claims
- 3153US2011308455A1Method of forming nano-particle array by convective assembly, and convective assembly apparatus for the sameCHOI HYUK-SOON·Filed 2011·Application pending·0 cites
- 3252US8958002B2Image sensorsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 17, 2015·0 cites·16 claims
- 3351US2012119180A1Non-volatile memory device and method of fabricating the sameKOO JUNE-MO·Filed 2012·Application pending·0 cites
- 3451US2008210998A1Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereofKOO JUNE-MO·Filed 2008·Application pending·0 cites
- 3550US2006090702A1Duplex chemical vapor deposition system and pulsed processing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3650US2007012974A1Method for manufacturing material layer, method for manufacturing ferroelectric capacitor using the same, ferroelectric capacitor manufactured by the same method, semiconductor memory device having ferroelectric capacitor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3748US2008038846A1Method of fabricating a capacitor of a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3847US8319291B2Non-volatile memory device with data storage layerKIM DEOK-KEE·Filed 2009·Granted Nov 27, 2012·1 cites·12 claims
- 3947US7250649B2Capacitor of a memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 31, 2007·0 cites·6 claims
- 4046US7585755B2Method of fabricating non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·0 cites·24 claims
- 4145US2008191264A1Non-volatile memory devices and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4244US8299520B2Semiconductor devices including auxiliary gate electrodes and methods of fabricating the sameKIM SUK-PIL·Filed 2009·Granted Oct 30, 2012·0 cites·15 claims
- 4344US7459736B2Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 2, 2008·1 cites·23 claims
- 4444US2008038532A1Method of forming nanoparticle array using capillarity and nanoparticle array prepared therebySAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4544US2007224347A1Liquid coating apparatus and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4643US2007082499A1Photoresist coating apparatus, medium, and method efficiently spraying photoresistSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4743US2008191263A1Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4843US2007077352A1Photoresist coating system and methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4940US2009045450A1Non-volatile memory device and method of fabricating the sameKOO JUNE-MO·Filed 2007·Application pending·0 cites
- 5038US2005161726A1Capacitor of a semiconductor device, memory device including the same and method of munufacturing the sameFiled 2005·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →