Inventor · disambiguated record
Reinhard Schauer
Also filed as: SCHAUER REINHARD
18 granted patents·4 pending applications·105 citations·filing 1992–2020
93Inventor score
Files withSILTRONIC AG13WACKER SILTRONIC HALBLEITERMAT4PASSEK FRIEDRICH1SCHAUER REINHARD1SILITRONIC AG1
Top patents by PatentIndex Score
22 records- 0193US11380621B2Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor waferSILTRONIC AG·Filed 2018·Granted Jul 5, 2022·10 cites·10 claims
- 0288US7935614B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafersSILTRONIC AG·Filed 2009·Granted May 3, 2011·11 cites·15 claims
- 0382US7285483B2Coated semiconductor wafer, and process and apparatus for producing the semiconductor waferSILITRONIC AG·Filed 2005·Granted Oct 23, 2007·7 cites·7 claims
- 0481US10991614B2Susceptor for holding a semiconductor wafer with an orientation notch during the deposition of a layer on a front side of the semiconductor wafer and method for depositing the layer by using the susceptorSILTRONIC AG·Filed 2018·Granted Apr 27, 2021·3 cites·3 claims
- 0580US7838398B2Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor waferSILTRONIC AG·Filed 2007·Granted Nov 23, 2010·6 cites·19 claims
- 0678US6630024B2Method for the production of an epitaxially grown semiconductor waferWACKER SILTRONIC HALBLEITERMAT·Filed 2001·Granted Oct 7, 2003·19 cites·25 claims
- 0777US7579261B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafersSILTRONIC AG·Filed 2006·Granted Aug 25, 2009·5 cites·12 claims
- 0872US7922813B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafersSILTRONIC AG·Filed 2006·Granted Apr 12, 2011·4 cites·14 claims
- 0972US7659207B2Epitaxially coated silicon wafer and method for producing epitaxially coated silicon waferSILTRONIC AG·Filed 2006·Granted Feb 9, 2010·7 cites·19 claims
- 1062US7101794B2Coated semiconductor wafer, and process and device for producing the semiconductor waferSILTRONIC AG·Filed 2004·Granted Sep 5, 2006·8 cites·14 claims
- 1160US9240316B2Method for producing an epitaxially coated semiconductor waferSCHAUER REINHARD·Filed 2009·Granted Jan 19, 2016·2 cites·13 claims
- 1256US6306735B1Method for producing a semiconductor waferWACKER SILTRONIC HALBLEITERMAT·Filed 2000·Granted Oct 23, 2001·5 cites·18 claims
- 1355US8304860B2Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon waferPASSEK FRIEDRICH·Filed 2010·Granted Nov 6, 2012·2 cites·20 claims
- 1454US9991208B2Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor waferSILTRONIC AG·Filed 2016·Granted Jun 5, 2018·0 cites·4 claims
- 1549US11982015B2Method for depositing an epitaxial layer on a front side of a semiconductor wafer, and device for carrying out the methodSILTRONIC AG·Filed 2020·Granted May 14, 2024·0 cites·10 claims
- 1646US5355831AEpitaxially coated semiconductor wafers having low-oxygen zone of adjustable extent and process for producing sameWACKER CHEMITRONIC·Filed 1992·Granted Oct 18, 1994·16 cites·7 claims
- 1745US2011073041A1Epitaxially Coated Semiconductor Wafer and Device and Method For Producing An Epitaxially Coated Semiconductor WaferSILTRONIC AG·Filed 2010·Application pending·0 cites
- 1844US11578424B2Epitaxially coated semiconductor wafer of monocrystalline silicon and method for production thereofSILTRONIC AG·Filed 2018·Granted Feb 14, 2023·0 cites·3 claims
- 1938US2012270407A1Susceptor for supporting a semiconductor wafer and method for depositing a layer on a front side of a semiconductor waferWERNER NORBERT·Filed 2012·Application pending·0 cites
- 2036US2004144977A1Semiconductor wafer with a thin epitaxial silicon layer, and production processWACKER SILTRONIC HALBLEITERMAT·Filed 2004·Application pending·0 cites
- 2135US10597795B2Method for producing a semiconductor wafer with epitaxial layer in a deposition chamber, apparatus for producing a semiconductor wafer with epitaxial layer, and semiconductor wafer with epitaxial layerSILTRONIC AG·Filed 2016·Granted Mar 24, 2020·0 cites·4 claims
- 2229US2001041258A1Standard for a nanotopography unit, and a method for producing the standardWACKER SILTRONIC HALBLEITERMAT·Filed 2001·Application pending·0 cites
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