Inventor · disambiguated record

Zhixin Cui

Also filed as: CUI ZHIXIN

49 granted patents·7 pending applications·1,029 citations·filing 2017–2024

98Inventor score

Technology areasH10W H10P H10D G11C H01L

Files withSANDISK TECHNOLOGIES LLC47 WESTERN DIGITAL TECH INC6 CHENGDU BOE OPTOELECT TECH CO2 SANDISK TECHNOLOGIES INC1

Top patents by PatentIndex Score

56 records

0199US10700078B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·35 cites·12 claims
0299US10700090B1Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jun 30, 2020·46 cites·12 claims
0399US10355009B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·62 cites·10 claims
0499US10304852B1Three-dimensional memory device containing through-memory-level contact via structuresSANDISK TECHNOLOGIES LLC·Filed 2018·Granted May 28, 2019·115 cites·12 claims
0599US9960181B1Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 1, 2018·155 cites·12 claims
0699US9853038B1Three-dimensional memory device having integrated support and contact structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Dec 26, 2017·119 cites·11 claims
0798US11621277B2Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 4, 2023·5 cites·8 claims
0898US11342245B2Through-stack contact via structures for a three-dimensional memory device and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 24, 2022·8 cites·20 claims
0998US11302714B2Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·5 cites·20 claims
1098US11069410B1Three-dimensional NOR-NAND combination memory device and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 20, 2021·26 cites·20 claims
1198US11049876B2Three-dimensional memory device containing through-memory-level contact via structuresSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 29, 2021·13 cites·9 claims
1298US10707233B1Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·38 cites·20 claims
1398US10388666B1Concurrent formation of memory openings and contact openings for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 20, 2019·19 cites·5 claims
1498US10381362B1Three-dimensional memory device including inverted memory stack structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·139 cites·18 claims
1597US11600634B2Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 7, 2023·5 cites·20 claims
1697US11335671B2Stacked die assembly including double-sided inter-die bonding connections and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 17, 2022·8 cites·20 claims
1797US10818542B2Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 27, 2020·25 cites·19 claims
1897US10777575B1Three-dimensional memory device with self-aligned vertical conductive strips having a gate-all-around configuration and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 15, 2020·24 cites·11 claims
1997US10490569B2Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openingsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 26, 2019·18 cites·17 claims
2096US11355437B2Three-dimensional memory device including bump-containing bit lines and methods for manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 7, 2022·5 cites·7 claims
2196US11094715B2Three-dimensional memory device including different height memory stack structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 17, 2021·3 cites·14 claims
2296US11069703B2Three-dimensional device with bonded structures including a support die and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 20, 2021·14 cites·20 claims
2396US10903222B2Three-dimensional memory device containing a carbon-doped source contact layer and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·13 cites·16 claims
2496US10192784B1Three-dimensional memory device containing self-aligned contact via structures and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 29, 2019·47 cites·12 claims
2595US11244958B2Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
2695US11114462B1Three-dimensional memory device with composite charge storage structures and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Sep 7, 2021·10 cites·1 claims
2795US10811058B2Bonded assembly containing memory die bonded to integrated peripheral and system die and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 20, 2020·13 cites·20 claims
2895US10586803B2Three-dimensional memory device and methods of making the same using replacement drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 10, 2020·9 cites·10 claims
2994US10903230B2Three-dimensional memory device containing through-memory-level contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 26, 2021·9 cites·20 claims
3094US10580783B2Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 3, 2020·16 cites·16 claims
3193US11877452B2Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 16, 2024·2 cites·19 claims
3292US11889694B2Three-dimensional memory device with separated contact regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 30, 2024·2 cites·20 claims
3390US11515326B2Three-dimensional memory device including laterally-undulating memory material layers and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 29, 2022·2 cites·12 claims
3488US11222954B2Three-dimensional memory device containing inter-select-gate electrodes and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 11, 2022·2 cites·14 claims
3586US10741579B2Three-dimensional memory device including different height memory stack structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 11, 2020·3 cites·20 claims
3686US10692884B2Three-dimensional memory device including bottle-shaped memory stack structures and drain-select gate electrodes having cylindrical portionsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 23, 2020·4 cites·14 claims
3785US11552100B2Three-dimensional memory device including a composite semiconductor channel and a horizontal source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 10, 2023·2 cites·5 claims
3885US11361816B2Memory block with separately driven source regions to improve performanceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
3983US10629611B2Three-dimensional memory device and methods of making the same using replacement drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 21, 2020·2 cites·19 claims
4070US10756106B2Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 25, 2020·1 cites·8 claims
4164US12464635B2Flexible printed circuit board and method for manufacturing the same, and display deviceCHENGDU BOE OPTOELECT TECH CO·Filed 2022·Granted Nov 4, 2025·0 cites·19 claims
4262US12411608B2I/O modulation scheme for ultra-high data throughput with massive NAND parallelismWESTERN DIGITAL TECH INC·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
4362US10930674B2Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 23, 2021·0 cites·8 claims
4462US2025391474A1Non-volatile memory with usage dependent suspend resumeSANDISK TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
4562US2025351348A1Three-dimensional semiconductor device containing core-bias electrode surrounded by vertical semiconductor channel and method of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2024·Application pending·0 cites
4660US11024635B2Three-dimensional flat NAND memory device having curved memory elements and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
4759US2025323231A1Adaptable memory system with multiple chipletsWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
4859US2025323195A1Memory chiplet bond pad configurationWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
4957US12310020B2Three-dimensional memory device including a dummy word line with tapered corner and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted May 20, 2025·0 cites·6 claims
5056US2025157538A1Even/odd word line driving in 3d memoryWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites

Showing the top 50 of 56 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →