Inventor · disambiguated record
James A. Teplik
Also filed as: TEPLIK JAMES A · TEPLIK JAMES ALLEN
14 granted patents·52 citations·filing 1993–2020
89Inventor score
Top patents by PatentIndex Score
14 records- 0193US8946779B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2013·Granted Feb 3, 2015·17 cites·15 claims
- 0290US10249615B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2015·Granted Apr 2, 2019·7 cites·22 claims
- 0387US10644142B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2017·Granted May 5, 2020·4 cites·13 claims
- 0487US9024324B2GaN dual field plate device with single field plate metalTEPLIK JAMES A·Filed 2012·Granted May 5, 2015·14 cites·22 claims
- 0585US10741496B2Semiconductor devices with a protection layer and methods of fabricationNXP USA INC·Filed 2018·Granted Aug 11, 2020·4 cites·21 claims
- 0678US9425267B2Transistor with charge enhanced field plate structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 23, 2016·4 cites·24 claims
- 0770US10957790B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2018·Granted Mar 23, 2021·1 cites·19 claims
- 0860US10971613B2Semiconductor devices with doped regions functioning as enhanced resistivity regions or diffusion barriers, and methods of fabrication thereforNXP USA INC·Filed 2020·Granted Apr 6, 2021·0 cites·21 claims
- 0955US9893156B2Segmented field plate structureNXP USA INC·Filed 2017·Granted Feb 13, 2018·0 cites·19 claims
- 1052US9972703B2Transistor with charge enhanced field plate structure and methodFREESCALE SEMICONDUCTOR INC·Filed 2016·Granted May 15, 2018·0 cites·10 claims
- 1151US9647075B2Segmented field plate structureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 1249US11437301B2Device with an etch stop layer and method thereforNXP USA INC·Filed 2020·Granted Sep 6, 2022·0 cites·18 claims
- 1348US11784236B2Methods for forming semiconductor devices using sacrificial capping and insulation layersNXP USA INC·Filed 2020·Granted Oct 10, 2023·0 cites·11 claims
- 1427US5312764AMethod of doping a semiconductor substrateMOTOROLA INC·Filed 1993·Granted May 17, 1994·1 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →