Inventor · disambiguated record
Xiaojie Hao
Also filed as: HAO XIAOJIE
14 granted patents·44 citations·filing 2014–2020
90Inventor score
Top patents by PatentIndex Score
14 records- 0192US9306154B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Apr 5, 2016·6 cites·21 claims
- 0289US10008663B1Perpendicular magnetic fixed layer with high anisotropyAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jun 26, 2018·6 cites·17 claims
- 0388US10153017B2Method for sensing memory element coupled to selector deviceAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Dec 11, 2018·6 cites·12 claims
- 0486US9831421B2Magnetic memory element with composite fixed layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 28, 2017·4 cites·24 claims
- 0585US9082951B2Magnetic random access memory with perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Jul 14, 2015·5 cites·20 claims
- 0684US10032979B2Magnetic memory element with iridium anti-ferromagnetic coupling layerAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Jul 24, 2018·2 cites·20 claims
- 0784US9679625B2Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jun 13, 2017·5 cites·18 claims
- 0880US9871191B2Magnetic random access memory with ultrathin reference layerAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Jan 16, 2018·4 cites·20 claims
- 0971US9502092B2Unipolar-switching perpendicular MRAM and method for using sameAVALANCHE TECHNOLOGY INC·Filed 2015·Granted Nov 22, 2016·3 cites·9 claims
- 1067US10559624B2Selector device having asymmetric conductance for memory applicationsAVALANCHE TECHNOLOGY INC·Filed 2017·Granted Feb 11, 2020·1 cites·21 claims
- 1164US10484921B2Wireless hotspot handover method, mobile terminal and storage mediumZTE CORP·Filed 2015·Granted Nov 19, 2019·2 cites·24 claims
- 1255US9543506B2Magnetic random access memory with tri-layer reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Jan 10, 2017·0 cites·19 claims
- 1352USRE47975EPerpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layerAVALANCHE TECHNOLOGY INC·Filed 2018·Granted May 5, 2020·0 cites·29 claims
- 1443US10910555B2Magnetic memory element incorporating perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →