Inventor · disambiguated record
Christopher L. Rexer
Also filed as: REXER CHRISTOPHER L · REXER CHRISTOPHER LAWRENCE
22 granted patents·5 pending applications·316 citations·filing 1992–2023
96Inventor score
Files withFAIRCHILD SEMICONDUCTOR7HARRIS CORP5SEMICONDUCTOR COMPONENTS IND LLC4KOCON CHRISTOPHER BOGUSLAW2YEDINAK JOSEPH A2
Top patents by PatentIndex Score
27 records- 0198US7504306B2Method of forming trench gate field effect transistor with recessed mesasFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Mar 17, 2009·89 cites·13 claims
- 0295US8362550B2Trench power MOSFET with reduced on-resistanceFAIRCHILD SEMICONDUCTOR·Filed 2011·Granted Jan 29, 2013·28 cites·30 claims
- 0392US11481532B2Systems and methods for designing a discrete device productSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Oct 25, 2022·5 cites·16 claims
- 0492US8680611B2Field effect transistor and schottky diode structuresKOCON CHRISTOPHER BOGUSLAW·Filed 2012·Granted Mar 25, 2014·9 cites·25 claims
- 0586US11880642B2Systems and methods for designing a discrete device productSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Jan 23, 2024·1 cites·20 claims
- 0686US8928077B2Superjunction structures for power devicesLEE JAEGIL·Filed 2008·Granted Jan 6, 2015·17 cites·25 claims
- 0786US8357976B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2010·Granted Jan 22, 2013·8 cites·8 claims
- 0885US8686493B2High density FET with integrated SchottkyTHORUP PAUL·Filed 2008·Granted Apr 1, 2014·18 cites·18 claims
- 0982US9595596B2Superjunction structures for power devicesFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Mar 14, 2017·3 cites·21 claims
- 1082US7859057B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 28, 2010·8 cites·16 claims
- 1182US7586156B2Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap deviceFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·38 claims
- 1280US5323036APower FET with gate segments covering drain regions disposed in a hexagonal patternHARRIS CORP·Filed 1992·Granted Jun 21, 1994·49 cites·12 claims
- 1377US2024119206A1Systems and methods for designing a discrete device productSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1475US6080614AMethod of making a MOS-gated semiconductor device with a single diffusionINTERSIL CORP·Filed 1997·Granted Jun 27, 2000·44 cites·46 claims
- 1574US8502313B2Double layer metal (DLM) power MOSFETDIKSHIT ROHIT·Filed 2011·Granted Aug 6, 2013·6 cites·23 claims
- 1670US8786010B2Superjunction structures for power devices and methods of manufactureYEDINAK JOSEPH A·Filed 2011·Granted Jul 22, 2014·3 cites·35 claims
- 1769US12471351B2Shielded gate trench power MOSFET with high-k shield dielectricSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Nov 11, 2025·0 cites·23 claims
- 1868US8669623B2Structure related to a thick bottom dielectric (TBD) for trench-gate devicesPAN JAMES·Filed 2010·Granted Mar 11, 2014·2 cites·30 claims
- 1959US2014203355A1Field effect transistor and schottky diode structuresFAIRCHILD SEMICONDUCTOR·Filed 2014·Application pending·0 cites
- 2054US2012156845A1Method of forming a field effect transistor and schottky diodeKOCON CHRISTOPHER BOGUSLAW·Filed 2011·Application pending·0 cites
- 2151US8124981B2Rugged semiconductor device architectureREXER CHRISTOPHER L·Filed 2008·Granted Feb 28, 2012·2 cites·24 claims
- 2242US5422288AMethod of doping a JFET region in a MOS-gated semiconductor deviceHARRIS CORP·Filed 1994·Granted Jun 6, 1995·8 cites·7 claims
- 2342US2012273916A1Superjunction Structures for Power Devices and Methods of ManufactureYEDINAK JOSEPH A·Filed 2011·Application pending·0 cites
- 2436US2005199918A1Optimized trench power MOSFET with integrated schottky diodeFiled 2004·Application pending·0 cites
- 2535US5940689AMethod of fabricating UMOS semiconductor devices using a self-aligned, reduced mask processHARRIS CORP·Filed 1997·Granted Aug 17, 1999·4 cites·15 claims
- 2634US5877044AMethod of making MOS-gated semiconductor devicesHARRIS CORP·Filed 1997·Granted Mar 2, 1999·4 cites·5 claims
- 2730US5317184ADevice and method for improving current carrying capability in a semiconductor deviceHARRIS CORP·Filed 1992·Granted May 31, 1994·0 cites·22 claims
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