Inventor · disambiguated record
Kwang-Yang Chan
Also filed as: CHAN KWANG MIEN · CHAN KWANG-YANG
15 granted patents·3 pending applications·177 citations·filing 2001–2004
92Inventor score
Files withMACRONIX INT CO LTD15
Top patents by PatentIndex Score
18 records- 0187US6458642B1Method of fabricating a sonos deviceMACRONIX INT CO LTD·Filed 2001·Granted Oct 1, 2002·71 cites·10 claims
- 0276US6482706B1Method to scale down device dimension using spacer to confine buried drain implantMACRONIX INT CO LTD·Filed 2001·Granted Nov 19, 2002·16 cites·20 claims
- 0375US6834013B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2001·Granted Dec 21, 2004·19 cites·6 claims
- 0473US6649971B1Nitride read-only memory cell for improving second-bit effect and method for making thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 18, 2003·18 cites·12 claims
- 0572US6587387B1Device and method for testing mask ROM for bitline to bitline isolation leakageMACRONIX INT CO LTD·Filed 2002·Granted Jul 1, 2003·18 cites·12 claims
- 0660US6706575B2Method for fabricating a non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Mar 16, 2004·7 cites·20 claims
- 0755US6531361B1Fabrication method for a memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 11, 2003·5 cites·16 claims
- 0854US6709921B2Fabrication method for a flash memory device with a split floating gate and a structure thereofMACRONIX INT CO LTD·Filed 2001·Granted Mar 23, 2004·6 cites·8 claims
- 0951US6838691B2Chalcogenide memory and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2002·Granted Jan 4, 2005·4 cites·8 claims
- 1051US6590266B12-bit mask ROM device and fabrication method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 8, 2003·4 cites·19 claims
- 1150US6514807B1Method for fabricating semiconductor device applied system on chipMACRONIX INT CO LTD·Filed 2001·Granted Feb 4, 2003·4 cites·14 claims
- 1248US6713821B2Structure of a mask ROM deviceMACRONIX INT CO LTD·Filed 2002·Granted Mar 30, 2004·3 cites·9 claims
- 1345US6919607B2Structure of two-bit mask read-only memory device and fabricating method thereofMACRONIX INT CO LTD·Filed 2002·Granted Jul 19, 2005·2 cites·11 claims
- 1438US6790730B2Fabrication method for mask read only memory deviceMACRONIX INT CO LTD·Filed 2002·Granted Sep 14, 2004·0 cites·13 claims
- 1537US2003107052A1Structure and method for fabricating a semiconductor deviceFiled 2002·Application pending·0 cites
- 1636US7002849B2Method for programming and erasing non-volatile memory with nitride tunneling layerMACRONIX INT CO LTD·Filed 2004·Granted Feb 21, 2006·0 cites·4 claims
- 1734US2003134463A1Method for fabricating a high voltage deviceFiled 2002·Application pending·0 cites
- 1829US2004133684A1Method and device for l2tp reconnection handlingFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →