Inventor · disambiguated record
Sang-Hoan Chang
Also filed as: CHANG SANG-HOAN
12 granted patents·2 pending applications·62 citations·filing 1999–2023
89Inventor score
Top patents by PatentIndex Score
14 records- 0180US11586848B2Object recognition devices, electronic devices and methods of recognizing objectsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 21, 2023·2 cites·17 claims
- 0280US8830724B2Methods of operating PRAMS using initial programmed resistances and PRAMS using the sameCHANG SANG HOAN·Filed 2011·Granted Sep 9, 2014·8 cites·19 claims
- 0378US6304484B1Multi-bit flash memory cell and programming method using the sameHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 16, 2001·27 cites·12 claims
- 0473US10672479B2Nonvolatile memory devices, memory systems and methods of operating nonvolatile memory devices for processing user dataSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·3 cites·20 claims
- 0573US9087220B2Nonvolatile memory cell with authentication key storageCHANG SANG HOAN·Filed 2012·Granted Jul 21, 2015·4 cites·12 claims
- 0671US2023196753A1Object recognition devices, electronic devices and methods of recognizing objectsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0767US8279664B2Phase change memory device, memory system, and programming method using variable verification pulsesCHANG SANG-HOAN·Filed 2010·Granted Oct 2, 2012·5 cites·14 claims
- 0860US8923043B2Memory device using flag cells and system using the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 30, 2014·2 cites·19 claims
- 0949US6630709B2Multi-level flash EEPROM cell and method of manufacture thereofHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 7, 2003·5 cites·3 claims
- 1048US6391665B1Method of monitoring a source contact in a flash memoryHYUNDAI ELECTRONICS IND·Filed 2000·Granted May 21, 2002·3 cites·14 claims
- 1144US6316313B1Method of manufacturing a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 13, 2001·2 cites·19 claims
- 1237US6821850B2Method of manufacturing a multi-level flash EEPROM cellHYUNDAI ELECTRONICS IND·Filed 2003·Granted Nov 23, 2004·1 cites·2 claims
- 1328US6157590ASolid state memory having a latch circuitHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 5, 2000·0 cites·3 claims
- 1428US2011055486A1Resistive memory devices and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →