Inventor · disambiguated record
Guang-Yaw Hwang
Also filed as: HWANG GUANG-YAW
13 granted patents·2 pending applications·68 citations·filing 2005–2014
90Inventor score
Top patents by PatentIndex Score
15 records- 0191US8310012B2Semiconductor device having metal gate and manufacturing method thereofHWANG GUANG-YAW·Filed 2010·Granted Nov 13, 2012·16 cites·17 claims
- 0285US8704294B2Semiconductor device having metal gate and manufacturing method thereofLIAO PO-JUI·Filed 2011·Granted Apr 22, 2014·7 cites·8 claims
- 0384US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
- 0483US8952451B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Feb 10, 2015·5 cites·8 claims
- 0581US8552503B2Strained silicon structureHWANG GUANG-YAW·Filed 2010·Granted Oct 8, 2013·6 cites·12 claims
- 0681US8298935B2Dual damascene processCHEN SHIN-CHI·Filed 2010·Granted Oct 30, 2012·5 cites·19 claims
- 0777US8802524B2Method of manufacturing semiconductor device having metal gatesLIAO PO-JUI·Filed 2011·Granted Aug 12, 2014·5 cites·20 claims
- 0872US7479458B1Methods and apparatus for the optimization of highly selective process gasesLAM RES CORP·Filed 2005·Granted Jan 20, 2009·8 cites·16 claims
- 0970US7662723B2Methods and apparatus for in-situ substrate processingLAM RES CORP·Filed 2006·Granted Feb 16, 2010·5 cites·15 claims
- 1065US8431460B2Method for fabricating semiconductor deviceHUANG SHIN-CHUAN·Filed 2011·Granted Apr 30, 2013·3 cites·8 claims
- 1162US9312258B2Strained silicon structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 12, 2016·1 cites·18 claims
- 1255US8999830B2Semiconductor device having metal gate and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 7, 2015·0 cites·27 claims
- 1350US8791013B2Pattern forming methodCHEN SHIN-CHI·Filed 2012·Granted Jul 29, 2014·0 cites·19 claims
- 1450US2014339652A1Semiconductor device with oxygen-containing metal gatesUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1536US2010108262A1Apparatus for in-situ substrate processingHWANG GUANG-YAW·Filed 2010·Application pending·0 cites
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